Chenghsing Li

Shanghai Institute of Microsystem And Information Technology · PCRAM

High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the lithography process and the micro-loading effect in the...

For improving the three-dimensional structure of phase-change memory devices, Ovonic threshold switch devices have received renewed attention as selectors owing to a simple production process, good scalability, and excellent performance. These can replace transistors and diodes in the available technology. Here, we have studied the GeSe-based chemi...

In this paper, GaGST films with different Ga contents were prepared by co-sputtering of Ge3.4Sb2.3Te5 target and Ga2Ge3.8Sb2.3Te5 target to obtain a high-speed and low-power phase change material. The present data emphasize that compared with Ge2Sb2Te5, Ga0.4Ge3.5Sb2.3Te5 exhibits a higher crystallization temperature(193°C) and better data retentio...

The blade bottom electrode contact (BEC) can significantly reduce the programming current of the phase change memory (PCM) and achieve low power consumption compared with the typical T-shaped PCM cell. The method of controlling the electrode width by controlling the thickness of the deposited layer can make the size break through the limit of photo...

Compared to the conventional phase change materials, the new phase change material Ta-Sb 2 Te 3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb 2 Te 3 were studied by using CF 4 /Ar. The results showed that when CF 4 /Ar = 25/25, the etching power was 600 W and the etc...