Chang Woo Lee

Chang Woo Lee
Yonsei University · Department of Physics

About

9
Publications
452
Reads
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33
Citations
Citations since 2017
9 Research Items
33 Citations
201720182019202020212022202302468101214
201720182019202020212022202302468101214
201720182019202020212022202302468101214
201720182019202020212022202302468101214
Introduction
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Publications

Publications (9)
Article
Reversible conversion over multimillion times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, an extended category of crystal structures from stable states via redistribution of vacancies, research on kinetic behavior of the va...
Preprint
Full-text available
Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by doping Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that...
Preprint
Reversible conversion over multi-million-times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, extended category of crystal structures from stable states via redistribution of vacancies, researches on kinetic behavior of the va...
Article
Interfacial phase-change memory (iPCM), comprising alternating layers of two chalcogenide-based phase-change materials—Sb2Te3 (ST) and GeTe (GT)—has demonstrated outstanding performance in resistive memories. However, its comprehensive understanding is controversial. Herein, the phase-change characteristic of iPCM is identified using atomic scale i...
Article
Metavalent bonding is crucial for the determination of phase transition and improvement of device performance in phase-change materials, which are attracting interest for use in memory devices. Although monitoring dielectric and phononic parameters provides a direct measure of the metavalent bonding, the control of phase-change phenomena and metava...
Article
Germanium telluride (GeTe), which has long been used in phase-change devices, has very unique structural characteristics. While atomic movement and related bond-order switching have been believed to determine the ferroelectric characteristics of this compound, structural changes accompanying ferroelectric switching have not been examined. In this s...
Article
Although Sb2Te3, as a candidate material for next-generation memory devices, has attracted attention owing to its properties such as higher operation speed and lower power consumption than Ge2Sb2Te5, its application in commercial memory devices has been limited due to its poor stability. Transition metal dopants provide enhancements in its phase ch...
Article
Robust massless Dirac states with helical spin textures were realized at the boundaries of topological insulators such as van der Waals (vdW) layered Bi2Se3 family compounds. Topological properties of massless Dirac states can be controlled by varying film thickness, external stimuli, or environmental factors. Here we report single-crystal-quality...

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