Chang Fu Dee

Chang Fu Dee
Universiti Kebangsaan Malaysia | ukm · Institute of Microengineering and Nanoelectronics

PhD

About

160
Publications
24,014
Reads
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1,147
Citations
Citations since 2016
69 Research Items
763 Citations
2016201720182019202020212022050100150
2016201720182019202020212022050100150
2016201720182019202020212022050100150
2016201720182019202020212022050100150
Introduction
Chemical, Gas and Bio sensors GaN related technologies Carbon based related materials and applications
Additional affiliations
January 2013 - December 2013
National Chiao Tung University
Position
  • Sabbatical study
July 2006 - present
Universiti Kebangsaan Malaysia

Publications

Publications (160)
Article
Because β-2-microglobulin (β2M) is a surface protein that is present on most nucleated cells, it plays a key role in the human immune system and the kidney glomeruli to regulate homeostasis. The primary clinical significance of β2M is in dialysis-related amyloidosis, a complication of end-stage renal disease caused by a gradual accumulation of β2M...
Article
A high frequency enhancement mode quaternary InAlGaN/GaN MIS-HEMT with recessed gate (L g = 150 nm) processed using an oxygen-based digital etching technique is presented. The digital etching was performed by cyclic ICP oxygen treatment to oxidize InAlGaN barrier and HCl wet etching to remove the oxidized layer. In this study, we have demonstrated...
Article
Diabetes mellitus (DM), an ailment caused by unregulated blood sugar levels, can lead to the failure of more than one organ in patients. Currently, blood tests are being conducted in scientific trials to analyse and track blood sugar and ketone levels. In this method, a drop of blood from a pricked finger is placed on a sensitive strip area, which...
Article
AlGaN/GaN high electron mobility transistors (HEMTs) heterostructures are grown by metal-organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrate and high resistive (HR-Si) simultaneously to investigate the influence of substrate types on electrical and thermal characteristics. The AlGaN/GaN HEMT epitaxial structure grown o...
Article
Gallium nitride could exhibit strong piezoelectric properties which could be further developed for high frequency devices, telecommunication applications, and many more. In this study, we explored theoretically and experimentally the potential Sezawa guided mode in the groove structure along the GaN/Sapphire interface. Computational analysis with F...
Article
In this paper, we investigate the influence of group-III precursor injection rate on the material and electrical properties of InAlGaN/GaN heterostructures grown by Metalorganic Chemical Vapor Phase Deposition. It is demonstrated that high-quality GaN layers can be achieved by using the sputtered AlN/sapphire templates. During the barrier layer gro...
Article
Full-text available
The radiation-induced damage in graphene irradiated with 8-MeV Cu²⁺ ions at fluences varying from 1 × 10¹⁵ ions/cm² to 1 × 10¹⁶ ions/cm² was studied. The samples were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectra analysis. T...
Article
Numbers of energy harvesting studies have reported that using the appropriate electrode materials could enhance the electrical output performance of the energy harvesters. In this work, we fabricated polyvinylidene fluoride (PVDF)-based piezoelectric nanogenerators (PENGs) using the solution-process method. Different combinations of silver nanowire...
Article
Full-text available
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher...
Article
Inclusive detection of organic compounds in aqueous solutions is a promising yet challenging approach for photoelectrochemical (PEC) sensors. In this work, the combined factors of crystalline phase change and Ti³⁺ self-doping were introduced to some fabricated anodic TiO2 nanotubes (ATNTs) to improve their efficacy as potential PEC sensors. Several...
Article
Full-text available
In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated devic...
Article
Full-text available
Physiological roles in human body system substantially supported by human serum albumin (HSA). Frequent monitoring of HSA level is vital in early diagnosis of HSA-related diseases. This work focuses on demonstrating field-effect transistor (FET)-based immunosensor utilizing high aspect ratio zinc oxide nanorods (ZnO NRs) as a transducer in quantify...
Article
Full-text available
A new 2D titanium carbide (Ti3C2), a low dimensional material of the MXene family has attracted remarkable interest in several electronic applications, but its unique structure and novel properties are still less explored in piezoelectric energy harvesters. Herein, a systematic study has been conducted to examine the role of Ti3C2 multilayers when...
Article
We report synthesis of Au-free selective area epitaxy of InGaAs/InAs heterostructure nanopillars on patterned Si (111) substrate by metal-organic chemical vapor deposition. Effect of trimethylindium supply on InGaAs/InAs heterostructure nanopillars morphology and crystal structure is studied. Transmission electron microscopy images reveal subtle an...
Article
The importance of nanotechnology in medical applications especially with biomedical sensing devices is undoubted. Several medical diagnostics have been developed by taking the advantage of nanomaterials, especially with electrical biosensors. Biosensors have been predominantly used for the quantification of different clinical biomarkers toward dete...
Article
In this research work, low atomic number (Z) carbon ions (C⁺) were used to treat titanium oxide nanoparticles (TiO2-NPs) and tune their optical properties. 8 MeV C⁺ were irradiated on TiO2-NPs at different fluences in the ranges of 2.5×1015to1×1016ions/cm2 to separately study their defects production and the effect on the bandgap. The C⁺ ion treate...
Article
Colloidal quantum dots (QDs) are promising building blocks towards the development of cost-effective and high-efficiency photoelectrochemical (PEC) cells. Unfortunately, the frequent use of QDs possessing heavy metals (e.g. Cd and Pb) in state-of-the-art QD-based PEC technologies is a major obstacle regarding their future commercial perspective. In...
Article
Full-text available
We study the induced defects in the depth profiling of the silicon structure after being implanted with carbon and followed by high energy proton irradiation. It has been reported before that the formation of the optically active point-defect, specifically the G-centre is due to the implantation and irradiation of carbon and proton, respectively. I...
Article
Biosensors operating based on electrical methods are being accelerated toward rapid and efficient detection that improve the performance of the device. Continuous study in nano- and material-sciences has led to the inflection with properties of nanomaterials that fit the trend parallel to the biosensor evolution. Advancements in technology that foc...
Conference Paper
We report the improvement in silicon band-edge emission when defects are deliberately introduced in the lattice structures. Silicon is a poor light-emitter due to its indirect bandgap nature. This paper aims to increase the intensity of the light emission from silicon by implantation of boron which will lead to the formation of dislocation loops be...
Article
Full-text available
In this study, we demonstrated the fabrication of the concave conic shape microneedle with the aid of COMSOL Multiphysics simulation. The stress and buckling of the microneedle structure were simulated by applying various loads ranging from 50-800 g perpendiculars to the tip in order to predict the occurrence of microneedles structure deformation....
Article
Aging phenomenon or hydrophobic recovery of plasma-treated surfaces is a major concern in various fields of application. Post-plasma decay of treatment level can lead to problems such as delamination and incompatibility. Considerable work has been done to understand the fundamental mechanisms of aging, from which several approaches have been develo...
Article
Full-text available
A titanium dioxide nanoparticle (TiO2 NP)–mediated resistive biosensor is described for the determination of DNA fragments of Escherichia coli O157:H7 (E. coli O157:H7). The sol-gel method was used to synthesize the TiO2 NP, and microlithography was applied to fabricate the interdigitated sensor electrodes. Conventional E. coli DNA detections are f...
Article
Full-text available
Highly ordered vertically grown zinc oxide nanorods (ZnO NRs) were synthesized on ZnO-coated SiO2/Si substrate using zinc acetylacetonate hydrate as a precursor via a simple hydrothermal method at 85 °C. We used 0.05 M of ZnO solution to facilitate the growth of ZnO NRs and the immersion time was varied from 0.5 to 4 h. The atomic force microscopy...
Article
Piezoelectric nanogenerator (PENG) is an alternative sustainable solution by transforming surrounding mechanical energy into electrical power. In this work, the optically transparent and mechanically flexible PENG devices were fabricated using simple all-solution-processed techniques. The device was constructed using spin- and spray coating methods...
Article
The propagation of surface acoustic wave (SAW) on the piezoelectric substrate requires conventionally an interdigitated electrode structure to excite the mechanical displacement at resonance frequency. The control of the electrode thickness could be useful to manipulate the energy confinement and the band dispersion of the surface guided mode. It h...
Article
In this study, surface modification of a silane-crosslinked polyethylene (Si-XLPE) compound was carried out by gliding arc atmospheric plasma. Samples were exposed to the plasma for different durations and the plasma-induced alterations of the surfaces were comprehensively assessed. Surface chemistry was evaluated initially via Fourier transform in...
Article
Full-text available
This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphe...
Article
A GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that...
Article
Full-text available
In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was...
Article
Full-text available
An innovative type of device for high-density and high-speed applications, three-gate (TG) SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against short channel effects (SCEs) and leakage current. To investigate the superior subthreshold characteristics of the suggested device, a physically based analytical model f...
Article
Full-text available
The original version of this article unfortunately contained errors. The language edits made in the original version has not been incorporated in the published version.
Article
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This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nan...
Article
Full-text available
Gallium Nitride (GaN) is considered as the second most popular semiconductor material in industry after silicon. This is due to its wide applications encompassing Light Emitting Diode (LED) and power electronics. In addition, its piezoelectric properties are fascinating to be explored as electromechanical material for the development of diverse mic...
Article
Full-text available
We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm2). One hundred-cycle device stability test has been performed, and it is f...
Article
In this letter, the growth of gold-free GaSb on various InAs nanowire (NW) crystal structures using metal-organic chemical vapor deposition is demonstrated. The GaSb was grown radially and axially on wurtzite (WZ), zinc-blend (ZB) and polytype (mixture of WZ and ZB) InAs NWs. The effect of the various InAs crystal structures on GaSb was studied. Th...
Article
Anodic aluminium oxide (AAO) is a self-organized nanopore that has been widely studied due to the ease of its synthesization and pore properties manipulation. However, pore growth behaviour under different geometrical surfaces is rarely studied, particularly on the effect of combined curved surfaces towards pore growth properties, which is crucial...
Article
We demonstrated the feasibility of indium-tin-oxide free, solution processable flexible nanogenerator using the nanocomposite mixture consists of polyvinylidene fluoride polymer, barium titanate and graphene quantum dots (GQDs) on the 2.0 cm by 2.5 cm polyethylene terephthalate substrate. Poly (3, 4-ethylenedioxythiophene)-poly (styrenesulfonate) w...
Article
In this study, we show that the efficiency and carrier life time of multi-crystalline silicon solar cells were significantly improved by using a low pressure (20,000 Pa) and temperature (650 °C~750 °C) environment grown thermal oxide (TO) as the surface passivation layer. In this experiment, during the first stage, the oxidation process was done at...
Article
The gate leakage mechanism for InAlGaN/GaN high electron mobility transistors (HEMTs) is systematically studied using temperature‐dependent gate current–voltage characteristics. The electric field across the barrier layer is calculated through the extracted polarization charge and dielectric constant of the InAlGaN/GaN HEMT. The gate current of the...
Article
Full-text available
We demonstrate the electrical performances of AlGaN/GaN MIS-HEMTs with high quality Al₂O₃ gate dielectric deposited by plasma enhanced atomic layer deposition (PEALD) using both H₂O and remote O₂ plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al₂O₃ film quality were obtained, resulting in a very small threshold voltage hyster...
Article
Observation of visible light trapping in zinc oxide (ZnO) nanorods (NRs) correlated to the optical and photoelectrochemical properties is reported. In this study, ZnO NR diameter and c‐axis length respond primarily at two different regions, UV and visible light, respectively. ZnO NR diameter exhibits UV absorption where large ZnO NR diameter area i...
Article
We demonstrated the feasibility to fabricate two-terminal non-volatile-memory (NVM) devices using pulsed radio frequency (rf) plasma polymerization and simple solution route. The two-terminal NVM devices were fabricated based on a metal-insulator-metal structure consisting of graphene quantum dots (GQDs) embedded in hexamethyldisiloxane dielectric...
Article
A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance–voltage (C–V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency disp...
Article
InN thin films were prepared on Si(111) substrate by plasma-assisted reactive evaporation method at low RF power of 100 W and the effect of employing hot filament as a localized ion source (LIS) on the structural, morphological and optical properties of the films was investigated. From the XRD and Raman results it was found that the crystallinity o...
Article
In2O3/W2N nanostructure composites were grown by nitrogen plasma assisted in-situ thermal annealing at different hot-filament temperatures, Tf. The in-situ thermal annealing changes the as-grown In2O3 nanostructure to In2O3/W2N nanostructure composite with decreasing the grain size from 200 to 300 nm to ~ 100 nm. The optical spectroscopy results in...
Article
Full-text available
One-dimensional zinc oxide nanowires (ZnO NWs) have been reported to be suitable for UV sensing, but their applications are limited due to restricted surface area which restrains the performance especially in term of response and recovery. In this paper, we fabricate a UV sensor using multi-parallel aligned ZnO NWs based FET in order to overcome th...
Article
Full-text available
An effective passivation with high-density positive fixed charges was demonstrated on GaN MIS-HEMTs. The positive fixed charges at the interface between passivation and AlGaN surface can reduce the surface potential and expand the quantum well under Fermi level. Besides, to satisfy charge balance, the net charge density at the AlGaN surface must eq...
Article
Full-text available
Zinc selenide (ZnSe) quantum dots (QDs) have been synthesized through a hydrothermal method using ZnCl2 and Na2SeO3 powder as the precursor in the presence of oleylamine as capping agent. The hydrothermal route was conducted at a moderate temperature (150°C) for 8 h. Optical properties of ZnSe QDs were studied through ultraviolet-visible spectrosco...