Chandra Shekhar

Birla Institute of Technology and Science Pilani | BITS Pilani · Central Library

This paper proposes an area, speed and power-optimized band-pass digital signal processing filter targeted for Kintex-7 Field Programmable Gate Array device. The filter was designed using MATLAB and Simulink and code generated using HDL Coder from MathWorks. The implementation was created using a novel high-level synthesis design method, which redu...

Connected smart vehicles in automotive industries have increased, resulting in high vehicle-to-vehicle, vehicle-to-infrastructure, and vehicle-to-cloud connectivity. Increased data rates are required to achieve high bandwidth requirements to support such communication networks. Despite having numerous advantages, high connectivity between devices p...

This work presents an investigation of ZnO/BST interface for the potential use of (Ba,Sr)TiO3 as a gate–dielectric in ZnO based thin-film transistors (TFTs) for low-voltage operation. A metal-insulator-semiconductor capacitor (MIS-C) structure, which consists of a Pt/BST/ZnO stack, was fabricated on a corning glass substrate. The capacitance-voltag...

The last two decades have seen a revolution in telecom technology with the evolution of three wireless mobile communication standards, namely, GPRS to 3G, 3G to 4G, and 4G to 5G. 5G offers faster download speeds and enables high connectivity between devices such as mobile phones, displays, smart homes, and smart cars because of its high reliability...

Sobel edge detector is an algorithm commonly used in image processing and computer vision to extract edges from input images using derivative of image pixels in x and y directions against surrounding pixels. Most artificial intelligence and machine learning applications require image processing algorithms running in real time on hardware systems li...

In the past few years, thin-film transistor (TFT) technology has experienced a rapid transition from amorphous silicon- (a-Si:H) and polysilicon-based TFTs to zinc oxide (ZnO)-based TFTs, and because of this transition, transparent TFTs have become a reality. In ZnO TFTs, which operate in accumulation mode, the threshold voltage has remained ambigu...

Modeling of non-idealities in ion-sensitive field-effect transistors (ISFET) is crucial for obtaining precise pH-sensing characteristics. This paper presents an accurate Simulation Program with Integrated Circuit Emphasis (SPICE) macromodel of a \(\hbox {Si}_{3}\hbox {N}_{4}\)–gate ISFET pH sensor which takes into account the temperature and tempor...

This work reports structural and electrical properties of ZnO thin film deposited by reactive RF sputtering at the room temperature, for thin film transistor (TFT) applications. To study the thickness dependent effect, ZnO thin film of thicknesses 100, 200 and 800 nm were deposited over p-type silicon substrate. Structural properties of thin films...

This paper presents a novel process for the fabrication of capacitive micromachined ultrasonic transducer (CMUT) arrays with isolation-trenches using anodic bonding technique. The developed fabrication process is easy, stiction-free, repeatable, reliable, requires low-temperature (<400 °C), and gives high yield. It is a 4-mask process. The process...

With the decreasing feature sizes and increasing chip areas, silicon microchips have been broadly doubling their component counts per chip every two years. This relentless exponential growth in the component counts has maintained its trend through out the eighties also, leaving the VLSI design methods struggling to cope as the actual component coun...

Finite State Machine (FSM) is an important element in digital systems design and in the design of VLSI systems. In any digital system which is not purely combinational, FSM design is essential. The FSM comprises of combinational logic with both independent and output dependent inputs. Some outputs from the combinational logic are fed back to the in...

Testing of ASICs is as important aspect of its development as design. Commercial LSI/VLSI testers are usually expensive and unaffordable by a typical Indian organization interested in design. Herein we present techniques for functional testing of chips through (i) a dedicated hardware, and (ii) a microprocessor based system along with a few off-the...

A review study of various MOS models proposed in the literature for use in circuit simulation has been carried out. Equations of threshold voltage and device current have been presented in a generalized way from where the different proposed models have been derived as approximations to reality. For each approximation, the underlying physical assump...

A review study of various models for subthreshold conduction in MOS devices presented in the literature bas been carried out. The models have been classified based on their underlying approach. Emphasis has been placed on the relation between the modelling assumption made and the physical reality of device operation, so that both a clear grasp of t...

This paper presents new gyroscope design architecture with the complete 2-DOF drive and 1-DOF sense mode oscillators that enable the implementation of reduced drive bandwidth without significantly decreasing the sense-to-drive mass ratio of the device. The mechanical structure has an additional anchoring of the decoupling frame mass which allows fo...

This paper reports fabrication of two-gimbal Ni–Fe torsional micro-gyroscope by SU-8 based UV-LIGA process. The device structure is designed to overcome the limitations of current surface micromachining process, allowing it to be excited with practical voltage levels and increasing its sensitivity to angular rate. The design equations of electrosta...

In this letter, we report a novel wet etching technique of a $c$ -axis-oriented ZnO film that solves the step coverage problem during formation of electrodes on this film. The negative profile or hanging structure of ZnO film deposited by RF magnetron sputtering was obtained during wet etching in HCl and $\hbox{NH}_{4}\hbox{Cl}$ solutions. The deve...

Silicon based low-roughness Au/Ti/SiO2/Si substrates were fabricated using standard IC fabrication processes. Evolution of surface roughness during substrate fabrication process was studied. Fabrication process steps, namely, thermal oxidation and e-beam evaporation for ultra-thin Ti(~ 5 nm)/Au(22 nm) films, were optimized to result in surface r.m....

Low temperature co-fired ceramics (LTCC)-technology, which is widely used for packaging and manufacturing high frequency RF components, is used for fabrication of micro-hotplates (MHP). Gas sensors produced using this technology leads to low power consumption (500 mW for 226 °C) due to low thermal conductivity (3–4 W/(m-K)). For small series, this...

Nano-arrays of bio-molecules have potential applications in many areas namely, bio-sensors, bio/molecular electronics and virus detection. Spot array, micro-contact printing and photolithography are used for micron size array fabrications while Dip-Pen Nanowriting (DPN) is employed for submicron/nano size arrays. We have fabricated nano-dots of 16-...

This paper deals with the characterization of smart-material combinations based on the principle of domain polarization; that provides change in voltage with pressure. Different binary, ternary and quaternary material combinations have been studied from the point of view of phases present, Curie temperature and their ferroelectric nature. Lead lant...

This paper deals with the characterization of smart-material combinations based on the principle of phase transformation; that may provide drastic change in resistance with a small change in pressure. Lead zirconate titanate (PZT) has been selected as a base material for the development of smart-material combinations and pressure-sensitive devices...

A three-dimensional analytical model for the threshold voltage is developed by solving Poisson's equation for trench-isolated MOSFET devices with uniform substrate doping. The analytical expression is the first developed to include the coupling effect of both the inverse narrow width effect (INWE) and short channel effect which result from the mutu...

The need for an LSI chip for interfacing data acquisition and conversion devices to a VME bus are highlighted. The functions of such an interface chip in a data acquisition subsystem are explained. The architecture, the design considerations and the novel features of the chip, designed at CEERI, Pilani, are discussed and the floor plan and specific...

Effect of mobile charge carriers (electrons and holes) in the depletion region on junction potential distribution, field distribution and capacitance has been studied. Close upper and lower bounds for potential and field functions have been found. It is found that the peak field and potential in the junction are less than those calculated by usual...