Carine Perrin

French National Centre for Scientific Research | CNRS · Institut Matériaux Microélectronique et Nanosciences de Provence

The composition and morphology of the product phase after the reaction of Ni thin film with In0.53Ga0.47As substrate at 350 °C were investigated by atom probe tomography, X-ray diffraction, and scanning electron microscopy. Results show the formation of a unique Ni3(In0.53Ga0.47)As phase with a low concentration in-depth gradient of Ni and the deco...

Opening the way to large bandwidths and high data rates Silicon Photonics is of great interest. In the scope of co-integrating III-V devices with CMOS very large scale integration (VLSI), innovative contacts to III-V materials have to be developed. In this paper we study the metallurgical and electrical properties of Ni-based metallizations to n-In...

In an original way, we exploit a restricted region within the dynamic strain ageing domain where a simultaneous increase in strength and uniform elongation has been shown, with increasing free solute concentrations. This unusual reverse dynamic strain ageing was shown to be a marker of the interaction between strain ageing and strain hardening. Ana...

III-V semiconductor compounds are increasingly attracting attention as promising candidates for serving as channel materials, especially in the development of contact recovery for sub-10 nm metal–oxide–semiconductor field-effect transistor (MOSFETs) devices or photonic applications. To contribute to this research, the Ni–InGaAs contact was formed b...

The thickness-dependent saturable absorption behaviour of atomically thin bismuth selenide films has been optimized using 515 nm and 1030 nm laser excitation wavelengths. The studies have been performed by the Z-scan technique employing 400 fs laser pulses emitted by a fiber laser at a repetition rate of 100 Hz. The obtained results allowed the det...

We report on both experimental and modeling of carbon and nitrogen segregation to dislocations in C–Mn ferritic steels. A model based on McLean theory is established to describe the competitive segregation of carbon and nitrogen in the Cottrell atmospheres around dislocations, considering the effect of dislocation density. It is expected from the m...

Hydrogen sensors able to perform measurements in real time in anaerobic environment such as natural gas (NG) will greatly help the development of power to gas technology. For now, thermal conductivity (TC) gas sensors and Pd thin film based sensors have demonstrated their capability to measure H2 in air and N2 but there is still lack of testing in...

Ni thin films with different thicknesses were grown on a GaAs substrate using the mag-netron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex...

Hydrogen is a promising gas for greenhouse gas emission reduction but also a reactive one. Thus, sensor for hydrogen detection in various atmospheres is mandatory. While leak sensors in air environments have been widely studied, only few researches have been done for hydrogen detection in anaerobic environments. In this work, the electrical resista...

This work aims to compare two deposition methods to highlight the strong influence of the induced morphology on the sensitive film conductivity. Lanthanum oxycarbonate films have been deposited by drop coating and screen printing for carbon dioxide detection. The measurements are based on a change in resistance and provide sensitive responses to ca...

In this work, the conductance behavior of tungsten trioxide based chemoresistive ozone sensors under ultra violet illumination was investigated. The tungsten trioxide sensitive layers were deposited on a SiO2/Si substrate by reactive radio frequency magnetron sputtering with several Argon / Oxygen ratios. The detection principle is based on a chang...

Metal Oxide Sensors are promising for gas detection but only a few studies about barium titanium deposition for carbon dioxide detection were reported. Its influence on detection has not been yet fully studied. Herein, we have realised barium titanium sensitive films by drop coating and screenprinting methods. A sensing material solution has been p...

Lead-free Ba0.85Ca0.15Zr0.10Ti0.90O3 (BCZT) ceramics have demonstrated excellent dielectric, ferroelectric and piezoelectric properties in comparison to lead-based materials. The synthesis of pure and crystalline BCZT nanopowders at low temperatures of 25, 80 and 160 C was reported previously by using a sol-gel method followed by a hydrothermal rou...

A barium titanate thin film was deposited by drop coating for carbon dioxide detection. The measurements are based on a resistance change and provided a sensitive response to different CO2 concentrations under a humidity environment. The concentration measurement range was between 100 and 5000 ppm of CO2 in synthetic air, and likewise, the relative...

2D materials are currently very promising candidates for various photonic applications. Optimizing their optical nonlinearities requires a thorough adjustment of several properties including the film thickness. In this work thin Sb2Te3 layers with different thicknesses (ranging from 2.5 nm to 50 nm) are prepared by the electron beam deposition tech...

Lead-free Ba0.85Ca0.15Zr0.10Ti0.90O3 (BCZT) ceramics have demonstrated excellent dielectric, ferroelectric, and piezoelectric properties in comparison to lead-based materials. The synthesis of pure and crystalline BCZT nanopowders at low temperatures of 25, 80, and 160 °C was reported previously by using a sol–gel method followed by a hydrothermal...

Surface treatments are considered as a good alternative to increase biocompatibility and the lifetime of Ti-based alloys used for implants in the human body. The present research reports the comparison of bare and modified Ti6Al4V substrates on hydrophilicity and corrosion resistance properties in body fluid environment at 37 °C. Several surface tr...

Introduction Environmental safety is attracting significant attention due to the increase of dust particles, and toxic gas species (e.g. CO, NOx, etc.) [1]. CO is identified as a major threat for human health. Since CO is a colorless, odorless, and tasteless gas, it can't be detected by human senses. Therefore, sensitive sensor operating in humid a...

Only few experimental techniques are able to characterize the space and size distributions of gas-filled nano-cavities embedded in ceramic matrices. The aim of the current paper is to point out the potentiality of atom probe tomography for this objective. Nano-clusters enriched in Xe are evidenced in 3-D reconstructed volumes in Xe-implanted CeO2....

The optimization of thin Sb2Te3 films in order to obtain giant ultrafast optical nonlinearities is reported. The ultrafast nonlinearities of the thin film layers are studied by the Z-scan technique....

Metal Oxide Sensors are promising for gas detection but only a few studies about barium titanium deposition for carbon dioxide detection werereported. Its influence on detection has not been yet fully studied. Herein, we have realised barium titanium sensitive films by drop coating and screen-printingmethods. A sensing material solution has been pr...

The increasing demands from micro-power applications call for the development of the electrode materials for Li-ion microbatteries using thin-film technology. Porous Olivine-type LiFePO4 (LFP) and NASICON-type Li3Fe2(PO4)3 have been successfully fabricated by radio frequency (RF) sputtering and post-annealing treatments of LFP thin films. The micro...

Sb2Te3 thin films are very promising candidates for nonlinear optics and several applications including superresolution and nano-photoinscription. This work aims to offer a detailed study of the preparation of the thin films and their nonlinear optical properties under nanosecond laser excitation. Thin Sb2Te3 films have been deposited by the electr...

In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with GaAs substrate. These results show the formation of a unique Ni3GaAs crystalline phase at 200 °C that remains stable until 40...

The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. During various heat treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ter...

The kinetics of CoSi2 formation via a solid-state reaction between CoSi and single crystal Si has been the object of many studies in the past. Because of the importance of nucleation, complex kinetics has been reported. In this work, we investigate CoSi2 formation kinetics with in-situ diffraction during isothermal annealing of CoSi films on Si (10...

The precipitation of γ′ phase in a commercial single crystal Ni-based superalloy with different cooling rates has been investigated by atom probe tomography. Numerous irregular interconnected γ′ precipitates in the size range of ~30 to 50 nm were obtained even utilizing the fastest possible cooling rate. Diffuse γ/γ′ interface and far from equilibr...

In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe t...

The SrNiP2O7 compound was prepared by a solid-state reaction method. Electrical properties and modulus analysis were studied using complex impedance spectroscopy in the frequency range 200 Hz-5 MHz and temperature range 609-728 K. The difference of the value of activation energy for the bulk obtained from analysis of equivalent circuit (0.88 eV) an...

Metallic silicides have been used as contact materials on source/drain and gate in metal‐oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed i...

This paper presents a combination of in situ synchrotron techniques (diffraction and reflectivity of x-rays) and sheet resistance measurements to study the phase transformations in functional thin films. The association of the three techniques enables simultaneously extracting structural and electrical characteristics of thin films during thermal a...

In-situ X-ray diffraction was used to determine CoSi2 growth kinetics from 100 nm CoSi films. In this work, we discuss about an unexpectedly slow reaction rate that is observed at the end of CoSi2 formation. A 1D model has also been developed from these experiments in order to reproduce the sequential growth of cobalt silicides and the end of the r...

In-situ X-Ray diffraction was used to determine CoSi2 kinetics growth from 100 nm CoSi. In this work, we discuss about an unexpectedly slow reaction that is observed at the end of CoSi2 formation. A 1D model has also been developed from these experiments in order to reproduce the sequential growth of cobalt silicides and the end of the reaction exp...

The unique capabilities of atom probe tomography (APT) to characterize internal interfaces and layer chemistry with sub-nanometer scale resolution in three dimensions have been recently opened up to materials with poor electrical conductivity by the use of ultrafast laser pulses. The progress in sample preparation (focused ion beam) as well as in i...

The formation of Ni silicide alloyed with Pt has been analyzed by atom probe tomography. A 300 °C/1 h anneal results in simultaneous growth of the NiSi and Ni2Si phases: the Ni2Si phase is a continuous layer with columnar grains, while the NiSi phase forms a discontinuous layer. Direct evidence of Pt diffusion short-circuits via Ni2Si grain boundar...

The formation of Ni silicide during the reaction between Ni(5% Pt) and a Si(100) substrate has been analyzed by differential scanning calorimetry (DSC), in situ x-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM), and ⁴ H e ⁺ Rutherford backscattering. The DSC measurements show evidence of the Ni <s...

a b s t r a c t The NiSi silicide that forms by reactive diffusion between Ni and Si-rich active regions of nanotransistors is currently used for contacts in nanoelectronics because of its low resistivity. The redistribution of boron during reactive diffusion between Ni (30 nm) and B doped-Si has been investigated by laser assisted wide-angle tomog...

The diffusion coefficient of As in 260 nm thick polycrystalline Ni ₂ Si layers has been measured both in grains and in grain boundaries (GBs). As was implanted in Ni ₂ Si layers prepared via the reaction between a Si layer and a Ni layer deposited by magnetron sputtering on a (100) Si substrate covered with a SiO ₂...

Thin film germanide reactions are often declared to be the same as silicides reactions which were far more studied. In this paper, we present a comparative study of the phase formation and kinetics of nickel silicides and nickel germanides by several experimental techniques. The samples, composed of a nanometric nickel film (50 nm) deposited on sil...

The arsenic redistribution after NiSi formation has been measured by secondary ion mass spectrometry (SIMS). The NiSi film has been obtained by solid state reaction of a Ni thin film with a silicon substrate doped with As. An increase in the As SIMS signal at the NiSi/Si interface was observed for some experimental conditions. By varying the SIMS e...

Wetting with µm-sized Pb droplets on thin polycrystalline films of decagonal Al13Co4 is reported. The films were prepared under high vacuum conditions in order to have Pb droplets lying on a clean surface. The method used is sequential deposition and annealing of specific stackings of Al and Co layers of nanometric thicknesses. A 300 nm thick Pb sl...

a b s t r a c t The silicide formation and the redistribution of Pt after deposition and after a heat treatment at 290 °C of Ni 1Àx Pt x films on Si have been analysed by atom probe tomography assisted by femtosecond laser pulses. Two phases with different composition were found to form during deposition at room temperature: a NiSi layer with a rel...

Experimental procedure allowing the measurement of kinetic factors controlling the reaction of a nanometric film with a monocrystalline substrate by differential scanning calorimetry (DSC) is described. This technique is shown to be of great interest for characterization of silicide formation during microelectronic industrial processes. Combining b...

The first stages of Ni silicides have been studied by laser assisted atom probe tomography. The observations were realized on a Ni alloyed with 5% of Pt film on (1 0 0)Si, at room temperature. Without any heating, it has been observed the formation of two phases with distinct compositions: a layer of relatively constant thickness about 2 nm, with a...

The redistribution of Pt after heat treatment at 290 degrees C for 1h has been analyzed by large-angle atom probe tomography assisted by femtosecond laser pulses. Two silicides Ni2Si and NiSi were found together with the solid solution of Ni and Pt. The redistribution of Pt at the Ni1-xPtx/Ni2Si interface is a clear illustration of the snowplow eff...

Thin films of Ni(Si1−xGex) are of interest for their applications in metal-oxide semiconductor transistors as contacts and interconnections. In this work, the lattice parameters and the coefficients of linear thermal expansion (γa, γb, and γc) of the orthorhombic Ni(Si1−xGex) alloys, with 0 ⩽ x ⩽ 1, were determined from high-temperature x-ray diffr...

The redistribution of As during the solid state reaction of nickel thin films with a n-doped (100) Si substrate has been analysed by secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and sheet resistance measurements. Heat treatment between 400°C and 650°C leads to the formation of the monosilicide (NiSi) and to very different SIMS d...

Atom probe tomography assisted by femtosecond laser pulses has been performed on a Ni(Pt) film on (100)Si. Two phases with different compositions were found to form during deposition at room temperature: a NiSi layer with a relatively constant thickness of approximately 2 nm and a particle of Ni2Si. The shape of the Ni2Si particle is in accordance...

Wetting of micron-sized Pb droplets on thin polycrystalline films of decagonal Al13Co4 and cubic crystalline AlCo phases is reported. The sample preparation is crucial to having Pb droplets lying on a clean surface. Decagonal and cubic films were prepared under high vacuum conditions, by sequential deposition and annealing of specific stackings of...

The system Cu-Co has a metastable miscibility gap in the under-cooled liquid phase which can be accessed by electromagnetic lévitation. Unsupported two-phase liquid drops display a variety of physical phenomena, including wetting, phase separation and solidification, which can be studied on this model system. This paper reports theoretical and expe...

By using electromagnetic levitation, liquid Cu–Co alloys can be undercooled below their liquidus temperature into the metastable miscibility gap, leading to a phase separation into a cobalt-rich L1 phase and a cobalt-poor L2 phase. This paper reports on experimental and theoretical investigations into the properties of this system, including equili...

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while...

The influence of chemical B-site ordering between Sc³⁺ and Nb⁵⁺ cations on the properties of the Pb(Sc1/2Nb1/2)O3 (PSN) relaxor has been investigated. Depending of the degree of ordering, PSN exhibits different behaviours. For a completely disordered material, a relaxor–ferroelectric phase transition is observed at 379 K by DSC. Ordering between Sc...

The transitions from a relaxor state to a rhombohedral ferroelectric phase are studied in different Pb(Sc1/2Nb1/2)O3 ceramics characterized by varied chemical ordering on the B site of the perovskite structure. The transition may arise at different temperatures, eventually in two stages in the same sample. The dielectric response reflects the densi...

The crystal structure of chemically disordered lead scandium niobate, Pb(Sc1/2Nb1/2)O3, is studied by the high-resolution neutron powder diffraction method. The data, collected over the temperature range 2-653 K, are analysed using Rietveld refinement. From 653 K to 378 K, the symmetry of PSN is found to be cubic (space group Pmm) with positional d...