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Introduction
Publications
Publications (27)
We investigated the sorption of hydrogen by yttrium-based getters for their application to vacuum wafer-level packaging of microelectromechanical systems. Thin alloy films were co-evaporated under ultra-high vacuum on silicon wafers. Getters were activated by annealing during one hour under inert argon atmosphere with traces of oxidizing species, a...
Yttrium, titanium, and yttrium-titanium getter thin films were elaborated on silicon by coevaporation in ultrahigh vacuum. Y-Ti films exhibit nanometric crystallites size (18–35 nm) leading to a very high grain boundary density, which is a favorable microstructure for activation at low temperature. The yttrium content in Y-Ti alloys influences grai...
Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be understood and controlled. In this work, we monitor stress evolution during crystallization in thin GeTe f...
In this work, we reexamine Ge rejection in Ge-rich GeTe thin films with a slight deviation from stoichiometry using a unique combination of in situ measurements: curvature and x-ray diffraction as well as electrical resistance and x-ray diffraction and reflectivity during annealing. This unique combination of several experiments performed simultane...
Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallization temperature is shown to be thickness-dependent for the thinner films. Various annealing condition...
Phase change materials (PCMs) such as Ge2Sb2Te5 (GST) undergo a reversible amorphous-to-crystal transition that is the basis of their interest for next generation non-volatile memories. The large density change upon crystallization raises important issues because of the large mechanical stresses occurring during memory cycling. In order to investig...
A complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore,...
Texture evolution is an important issue in materials and nanosciences. Understanding it is fundamental for controlling the final orientation, which in fine controls the desired properties of nanodevices. Here, we reveal the formation of a peculiar texture during the silicidation of nanoscale Pd thin films. We demonstrate that the crystallographic r...
Errors in the article by Mocuta, Richard, Fouet, Stanescu, Barbier, Guichet, Thomas, Hustache, Zozulya & Thiaudière [J. Appl. Cryst. (2013), 46, 1842–1853] are corrected.
Structural anisotropy, for example texture, may govern important physical properties of thin film, such as electrical, magnetic and/or mechanical ones. Texture (orientation information) is typically observed and quantified by the measurement of so-called pole figures. An optimized experimental approach implemented at the DiffAbs beamline (Synchrotr...
Palladium-silicon (Pd-Si) is a model system for investigating stress development during solid state reaction because of the formation of one single phase (hexagonal Pd2Si). In this work we have measured simultaneously the curvature of the substrate and the diffracted signal from the films during reactive diffusion of a thin Pd (25 nm) film with a S...
Palladium-silicon (Pd-Si) is a model system for investigating stress development during solid state reaction because of the formation of one single phase (hexagonal Pd2Si). In this work we have measured simultaneously the curvature of the substrate and the diffracted signal from the films during reactive diffusion of thin Pd (50 nm) films with Si(0...
Nickel based silicide films were prepared by annealing nickel–platinum layers deposited on n-doped Si substrates. We report on the evolution of the crystallography, the phase formation and the redistribution of contaminants on blanket wafers during silicide formation as a function of the silicon surface preparation prior to Ni(Pt) deposition. In si...
We have investigated the interface roughness in Au/Ni multilayers by scanning tunnelling microscopy (STM) and small angles X-ray scattering. The comparison of the roughness statistical parameters deduced from these two techniques is reported. A good agreement is found for the ξ values but not for the h values. A linear relationship between ξ and th...
Recently, a method was developed for determining interface profiles of extreme-ultraviolet layered synthetic microstructures (LSMs), which is based on computer processing of digitized LSM electron micrographs. Nickel/carbon and molybdenum/carbon multilayers are studied and analyzed in order to show the potentialities of the method in controlling th...
A method is developed for determining interface profiles of extreme ultraviolet- (EUV-) layered synthetic microstructures (LSM’s). It is based on computer processing digitized LSM electron micrographs. This study was carried out on a tungsten/carbon multilayer. Interfacial roughness has been characterized by means of two statistical parameters, i.e...
Some considerations of the spectroscopic performance of a soft x-ray Fabry-Perot etalon (XFPE) are presented. A whole study of the phase change on reflection of a soft x ray multilayer interferential mirror (MIM) has been necessary to evaluate the theoretical behavior of the order of interference of an XFPE. For grazing incidence angles, there is a...
The influence of the number of bilayers on the optical performances of actual X-UV multilayer interferential mirrors (MIMs) has been studied in order to emphasize the experimental restrictions in the designing of “thick” mirrors used for the development of etched multilayer gratings. Several sets of samples (W/C, Mo/Si) with increasing number of bi...
The influence of the number of bilayers on the optical performances of actual X-UV multilayer interferential mirrors (MIMs) has been studied in order to emphasize the experimental restrictions in the designing of "thick" mirrors used for the development of etched multilayer gratings. Several sets of samples (W/C, Mo/Si) with increasing number of bi...
Ni/Cr multilayers have been grown on Si(100) by dc triode sputtering. Three different samples have been investigated where the only purposely variable parameter is the superperiod: Λ = 52, 35 and 27 Å. The Ni:Cr ratio was kept constant equal to 1:1 and the total thickness is about 1200 Å. The quality of the layering is shown by the low-angle X-ray...
A laterally graded (gamma) multilayer interferential mirror (MIM), (where the division parameter (gamma) is the ratio between the thickness of the high refractive index material and the MIM's period), has been manufactured by means of a sputtering technique. The multilayer design is carefully described. This special MIM has been characterized by sp...
A laterally graded gamma layered synthetic microstructure (LSM), (where the division parameter gamma is the ratio between the thickness of the high refractive index material and the LSM's period), has been manufactured by means of a sputtering technique. This special LSM has been characterized by specular reflectivity X-ray measurements using a dif...
