Brajendra S. Sengar

Brajendra S. Sengar
National Institute of Technology Srinagar | NIT Srinagar · Department of Electronics and Communication Engineering

PhD

Publications

Publications (46)
Article
We report a unique methodology of triggering plasmonic excitations in sputtered ultrathin CIGSe films. In this approach of plasmonic excitation, secondary ion source present in the growth system instigates the formation of nanoclusters of its constituent elements, which is the source of plasmonic excitation. The formation of the nanoclusters during...
Article
Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized a...
Article
Full-text available
Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE). The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers. The homojunction is suitable for further improvement...
Chapter
In this chapter, the recent progress in receiver architecture and various aspects of the available receiver architectures have been discussed. Besides, an overview of the systematic classification of architecture has been analyzed. Documentation of new possibilities and system-level trade has been closely inspected. Certainly, there is a requiremen...
Chapter
This chapter presents the GaN-based different devices for 5G applications. It includes the design and performance optimization of devices for the above mentioned application. The comparison between Si-based devices with GaN-based devices has been performed and The performance of GaN-based devices outplayed the Si-based devices.
Chapter
This review article summarizes the recent development in chalcopyrite and kesterite, based thin film solar cell. The thin film solar cell have always been compared with the bulk technologies for their lower conversion efficiency. But recent advancement in the fabrication of thin film solar cell using sputtering, molecular beam epitaxy, metal organi...
Article
Multiple quantum wells (MQWs) of CdZnO/ZnO are realized, for the first time, by dual ion beam sputtering (DIBS) system at different deposition conditions in terms of ion beam power, substrate temperature, and time cessation between deposition of successive layers. The effects of DIBS deposition conditions are analyzed by secondary ion mass spectros...
Article
In this work, a new simulation approach of transient analysis on single cavity dielectric-modulated (DM) p-type of tunnel field-effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well-calibrated with experimental data. In this work, we...
Conference Paper
The Paper is an attempt to investigate bufferless Solar Cell, replacing toxic CdS Layer with a non-toxic, efficient alternative. Find an insight below: Cadmium Sulphide ( C dS) is a prominent buffer layer used in various kesterite based solar cells. However, toxicity of C dS has created an urgent need to search for alternate buffer layers. In this...
Article
This article presents analytical and simulation evaluation of multiple quantum well solar cells (MQWSC) with CdZnO/ZnO as the intrinsic layer, Sb-doped ZnO (SZO) as a p-type layer, and Ga-doped ZnO (GZO) as an n-type layer of the p-i-n solar cell (SC). The material parameters used in this article are obtained from the experimental reports on the pr...
Article
An analytical study has been carried out to obtain the device performance parameters of InGaN/GaN-based multiple quantum well solar cell (MQWSC). Significant improvements are made upon the preexisting models reported in the literature for predicting device performance matrix for MQWSC. The American Society for Testing and Materials (ASTM) standards...
Poster
In this work, we demonstrates the analytical model developed for the p-i-n solar cells to obtain the J-V characteristics and the device performance parameters i.e. the short circuit current(Jsc), open circuit voltage(Voc) and conversion efficiency(η) of the solar cell. We have studied the effect of indium mole fraction of InGaN (intrinsic region) o...
Article
We report a novel approach of sputter-stimulated plasmonic generation in Na-doped MgZnO (NMZO) thin films. Sputtering of material during film growth by utilizing secondary direct-coupled ion-source present in dual-ion beam sputtering system leads to the generation of nanoclusters of its constituent elements due to different sputtering-out rates of...
Article
The approach of eliminating buffer layer in conjunction with plasmon-enhanced transparent conduction oxide (TCO) layer is an attractive methodology to realize low-cost ultrathin buffer-less solar cells (SCs) by introducing plasmon-enhanced absorption and reduced fabrication steps. Here, we report a novel method to generate wide-band sputter-stimula...
Article
A novel work on several aspects of current conduction mechanism for resistive switching (RS) of a reactive electrode-based memristor (Al/ZnO/Al) against generally used inert electrode-based devices has been illustrated. Compliance current (I cc ), i.e. maximum current through device and stop voltage (V stop ), i.e. maximum V stop upon device, has b...
Chapter
In this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/3at.% Ga:Mg0.20Zn0.80O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for realization of all sputtered buffer-less solar cells.
Article
Cu 2 ZnSn(S,Se) 4 (CZTSSe) is an interesting absorber material for thin film solar cells. However, one of the key challenges for the kesterite-based solar cells is to improve the open-circuit voltage (V oc) deficit, which is resultant of recombination at the interface of buffer/absorber. In this work, Cd-free n-type buffer layers with two different...
Article
Recently, realization of ultrathin solar cells is the area of interest of researchers in the domain of cost-effective photovoltaics. This study demonstrates a novel way of generation of plasmonic features in transparent conducting oxide material in the form of Ga-doped ZnO (GZO) thin films to compensate for the loss of optical absorption due to red...
Article
We present surface analysis of Cu2ZnSn(S,Se)4 (CZTSSe) thin films deposited on Mo/glass substrates. X-ray photoelectron and energy dispersive x-ray spectroscopy has been performed on CZTSSe thin-film solar cell absorbers for surface and bulk compositional analysis, respectively. It is observed that the surface of the CZTSSe absorber is Cu deficient...
Article
The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga: ZnO (GZO) thin films in the wide spectral range of ~1.87-10.04 eV. In this, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different me...
Conference Paper
In this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/3at.% Ga: Mg0.20Zn0.80O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for realization of all sputtered buffer-less solar cells.
Conference Paper
The near-surface region of thin-film polycrystalline CZTSSe is considered influential because it is the region where the electrical junction forms in a CZTSSe photovoltaic device. Spectroscopic Ellipsometry measurements of polycrystalline CZTSSe films reveal that there is a thin layer at the surface which has different optical and electronic proper...
Conference Paper
Electrical and optical properties of dual ion-beam sputtered (DIBS) Ga-doped ZnO (GZO) film is analyzed. Usage of assist ion source in DIBS precisely controls excitation of plasmonic features in GZO film. The plasmonic features observed in GZO are due to the formation of metal and metal-oxide nanoclusters. Such plasmon generation is verified by ele...
Conference Paper
Electrical and optical properties of dual ion-beam sputtered (DIBS) Ga-doped ZnO (GZO) and Ga-doped MgZnO (GMZO) individual films are analyzed. Usage of secondary ion source favors excitation of sputter-instigated plasmonic feature in individual thin film. The plasmonic feature observed in GZO and GMZO thin films due to the formation of metal and m...
Article
We report dual ion beamsputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free,...
Article
The structural and optical properties of Ga-doped ZnO (GZO) and Ga-doped MgZnO (GMZO) individual films are analyzed. Sputter-instigated plasmonic features are observed in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters. The plasmon generation is verified by electron energy loss spectra obtained by ultraviole...
Article
A systematic growth optimization of Cu2ZnSn(S, Se)4 (CZTSSe) thin films by dual ion beam sputtering system from a single CZTSSe target is presented. It is observed that the ratio of Cu/(Zn + Sn) varies from 0.86 to 1.5 and that of (S + Se)/metal varies between 0.62 and 0.97 when substrate temperature (Tsub) is increased from 100 to 500 °C. The crys...
Article
The crystalline, electrical, morphological, optical properties and plasmonic behaviour of Ga doped MgZnO (GMZO) thin films grown at different substrate temperatures (200–600 °C) by a dual ion beam sputtering (DIBS) system are investigated. Transmittance value of more than ∼94% in 400–1000 nm region is observed for all GMZO films. The particle plasm...
Conference Paper
A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg 0.05 Zn 0.95 O (GMZO) interface is obtained with valence and conduction band offset values of −0.045 and −0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet ph...
Article
Inorganic-organic hybrid nanostructures consisting of graphene as the organic part are being explored for various applications. Graphene quantum dots (GQDs) have gained popularity among other semiconductor quantum dots due to their distinct and interesting properties. Here, we have studied various properties of the electrodeposited hybrid nanocompo...
Article
We report a detailed correlation analysis of the size, shape, and distribution of Au nanoparticles (NPs) on fine-tuning of localized surface plasmon resonance and optical absorption cross-section. Experimental analysis of annealing temperature and initial Au layer thickness on NP parameters such as size, interparticle distance, surface coverage, an...
Article
Ultraviolet photoelectron spectroscopy is carried out to measure the energy discontinuity at the interface of p-type Na-doped MgZnO (NMZO)/n-type Ga-doped ZnO (GZO) heterojunction grown by dual ion beam sputtering. The offset values at valence band and conduction band of NMZO/GZO heterojunction are calculated to be 1.93 and −2.36 eV, respectively....

About

46
Publications
3,765
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358
Citations
Additional affiliations
March 2021 - present
National Institute of Technology Srinagar
Position
  • Professor (Assistant)
July 2019 - March 2021
Centre for Advanced Studies Lucknow
Position
  • Professor (Assistant)
Education
July 2014 - April 2019
Indian Institute of Technology Indore
Field of study
  • Photovoltaic Devices

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