Bibhuti B Sahu

Bibhuti B Sahu
Indian Institute of Technology Delhi | IIT Delhi · Energy Science and Engineering

Ph.D. in Plasma and Applied Physics
Looking for Industries and Funding partners !!!!

About

67
Publications
51,635
Reads
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1,073
Citations
Introduction
Working in interdisciplinary areas: Plasma Physics and Plasma Processing, Materials Science, Nanoscience, and applied physics. Plasma science is the investigation of ionized states of matter. We can use plasma as a tool for the economic prosperity of different industrialized societies. I am looking forward for industrial partners for collaboration, consultation and taking up projects using plasma based technologies. See https://bibhutisahu.wixsite.com/my-site You may contact me.
Additional affiliations
November 2020 - present
Indian Institute of Technology Delhi
Position
  • Professor (Associate)
Description
  • Academic and Research
October 2019 - November 2020
Nagoya University
Position
  • Professor
Description
  • Worked on plasma science and technologies, materials, material science, plasma etching and thin film deposition, APP plasma and applications.
October 2012 - December 2013
Korea Institute of Fusion Energy
Position
  • Senior Researcher
Description
  • involvement in the operation and upgrade plan of the electron cyclotron heating (ECH) and lower hybrid current drive (LHCD) systems, numerical computations using bench mark codes, and engineering design of microwave components
Education
July 2000 - July 2008
Indian Institute of Technology Delhi
Field of study
  • Helicon plasmas (Ph.D.)

Publications

Publications (67)
Article
Full-text available
We consider the corona model and local thermal equilibrium approximations of a real plasma to measure the electron temperature (Te) and density (ne), respectively, using the optical emission spectroscopy (OES) method in dual-frequency pulsed capacitively coupled plasmas (CCPs) in a reactive mixture of Ar/O2/C4F8 at a low operating pressure. The ope...
Article
Full-text available
This work reports a systematic review of the studies of magnetron sputtering (MS) discharges and their utilities for the deposition of transparent coating oxide thin films like indium tin oxides (ITOs). It collates the overall information of plasma science, diagnostics, and chemistry and their usefulness in controlling the plasma process, film grow...
Article
Full-text available
This work systematically studies a capacitively coupled plasma (CCP) source using experiments and 1-D COMSOL simulations relevant to Ar plasmas. Two radio frequency (RF) compensated Langmuir probes (LPs) and optical emission spectroscopy (OES) were purposefully used to measure the plasma parameters, and the experimental results were compared with t...
Article
The lowest resistivity of ∼4.8 × 10⁻⁴ Ωcm and an average visible transmittance of 82% in very thin ITO films of thickness ≤35 nm were produced by the technique 3-D confined magnetron sputtering (3DCMS) at room temperature. Utilizing two DC power supplies to the side and top targets and controlling the plasma parameters, we fabricated crystalline mi...
Article
The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at a low processing temperature were about ~5 × 10 ⁻⁴ Ω · cm and >30 cm ² /...
Article
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A rectangular closed and hollow three-dimensionally confined large area magnetron source (3-DCLAMS) and a conventional moderate area facing target magnetron source (FTMS) have been used to study the plasma characteristics using different diagnostics at different working pressures. Flexible indium tin oxide (ITO) films deposited at similar operating...
Article
Full-text available
Molybdenum disulfide (MoS2) has attracted considerable attention as a promising electrocatalyst for the hydrogen evolution reaction (HER). However, the catalytic HER performance of MoS2 is significantly limited by the few active sites and low electrical conductivity. In this study, the growth of multiorientated polycrystalline MoS2 using plasma-enh...
Article
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The present study reports on the systematic analysis of the friction and the wear behaviors of carbon nitride (CNx) thin films deposited by direct current unbalanced magnetron sputtering. We focus on the normal load dependence on the friction coefficient and wear rate for the sliding friction of the SUJ2 ball with the CNx thin film. The friction co...
Article
This work reports an advanced plasma-material process comprising the process design, plasma characterization, and surface engineering of LiMn2O4 films deposited by dual RF magnetron sputtering (MS). Several plasma diagnostic techniques integrated with the MS system were carefully utilized for the in-situ process monitoring to control the plasma par...
Article
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The present work investigates the effects of helium (He) gas mixing with Ar on plasma parameters and examines its effect on film properties of C films. We used a closed-field unbalanced magnetron sputtering system for the deposition of C thin films at a direct current power density of 30 W/cm² and an operating pressure of ≈3 mTorr. On the basis of...
Article
This work presents the plasma characteristics in a conventional planar magnetron source (PMS) and a large 3-D confined magnetron source (3DMS). We utilize different plasma diagnostic methods to study the plasma characteristics and the favorable plasma condition for the deposition of ultra-thin indium tin oxide (ITO) film near room temperature. Meas...
Article
Permeation barriers for organic devices and packaging on flexible substrates are realized by using a simple single-layered silicon nitride (SiN x ) film deposited via radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) at a low temperature (~70 °C) with plasma and radical control. Several operation parameters like RF power and tr...
Article
A correlation study between the microstructural, electrical, optical, and morphological properties of the highly transparent and conductive Al-doped ZnO (AZO) films of varying thickness deposited by 3D confined DC magnetron sputtering is reported. Incorporating a high-density plasma environment as indicated by plasma diagnostic it was possible to f...
Article
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The formation of instabilities linked with plasma flares of several centimeters (ionization zone) and driven by low to moderate current in three-dimensionally confined magnetron plasma is experimentally observed in a side-on view near the vicinity of the substrate. The flare velocity on account of cross-field drift is found to be 20.5 km/s with an...
Article
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A large area magnetron source with the strongly confined magnetic field from all direction is applied for the deposition of flexible ultrathin ITO (UT-ITO) films of thickness 30 nm at room temperature for their applications as transparent electrodes. The films show a minimum resistivity of ∼5.0 x 10⁻⁴ Ωcm and high transmittance >80% at wavelengths...
Article
Full-text available
By changing the power density, the microstructure, surface morphology, surface energy, and electrical conductivity of the magnetron sputtered Cu films are tuned at a fixed Cu atomic content and the amount of Cu ion release. Data reveals that films with good crystallinity, low surface roughness, minimum surface energy, and the lowest electrical resi...
Article
Highly transparent conductive ITO coatings with transparency ≥80% and resistivity ∼2.8 ×10⁻⁴ Ωcm are prepared directly by substrate heating using an advanced 3D confined high-density magnetron source (3DMS). The deposited ITO films exhibit excellent carrier concentration, mobility, and crystallinity at a moderate substrate temperature and without p...
Article
Full-text available
This work reports a detailed study on the low-temperature synthesis of highly conductive transparent Al-doped ZnO films using magnetron sputtering with the support of an inductively coupled plasma (ICP) source. It is seen that the ICP source is quite useful to provide significant ionization and excitation reactions conducive to the film growth in t...
Article
Full-text available
Flexible ultra-thin indium oxide films (UT-ITOs) of 30–50 nm thick, with crystallized nanoclusters (NCs), exhibiting excellent resistivity as low as ~5.6 × 10⁻⁴ Ω cm are deposited at ~80 °C without heating using a new 3-D confined magnetron source (3DMS). Material characteristics are purposefully investigated in light of NC formation. Also, the mea...
Article
Full-text available
By mixing and alternating power conditions of radio frequency and microwave plasma sources, a detailed study of a-SiNx:H films in the SiH4/N2 plasma enhanced chemical vapour deposition processes is undertaken. Data reveal a remarkable coherence between the deposition conditions, material's quality, bond densities, optical property, and stoichiometr...
Article
As transparent conductive films, indium tin oxide (ITO) materials are being extensively used as electrodes in various technological and optoelectronic applications. The demand for ITO films is firmly increasing because of the widespread market growth in these industries, but the available solutions only partly fulfill the prerequisites of high tran...
Article
Full-text available
This work presents a simple design of surface wave plasma (SWP) source based on cylindrical cavity excited by ∼ 850 MHz ultra high frequency (UHF) wave. The cavity equipped with four rectangular slots demonstrates the usefulness of a large aperture coupling for plasma generation using top-wall excitation. The UHF power is coupled to the plasma thro...
Article
Full-text available
Control of plasma and radical generation and associated energy deposition near the growing thin films are still the main challenges in materials fabrication in the plasma-assisted deposition of Si quantum dot (QD) thin film. To control and enhance the material's performance concerning film properties and application durability, we prepare 2.6 nm si...
Article
Atmospheric pressure plasma (APP) jets or plasma plumes have recently shown the potential for applications such as plasma surface modification and plasma medicine. These applications need insight into their plasma chemistry and discharge behavior, which are strongly influenced by the plasma parameters. In contrast to conventional APP jet devices, t...
Article
Understanding the science and engineering of thin films using plasma assisted deposition methods with controlled growth and microstructure is a key issue in modern nanotechnology, impacting both fundamental research and technological applications. Different plasma parameters like electrons, ions, radical species and neutrals play a critical role in...
Article
Due to the problem of degradation by moisture or oxygen, there is growing interest in efficient gas diffusion barriers for organic optoelectronic devices. Additionally, for the continuous and long-term operation of a device, dedicated flexible thin film encapsulation is required, which is the foremost challenge. Many efforts are being undertaken in...
Article
Full-text available
Articles you may be interested in Effect of driving frequency on the electron energy distribution function and electron-sheath interaction in a low pressure capacitively coupled plasma Phys. Plasmas 23, 110701 (2016); 10.1063/1.4967356 An investigation of Ar metastable state density in low pressure dual-frequency capacitively coupled argon and argo...
Article
Full-text available
Although studies of silicon (Si) quantum dots (QDs) were started just a few years ago, progress is noteworthy concerning unique film properties and their potential application for devices. In particular, relating to the Si QD process optimization, it is essential to control the deposition environment by studying the role of plasma parameters and at...
Article
The characterization of plasma and atomic radical parameters along with the energy influx from plasma to the substrate during plasma enhanced chemical vapor deposition (PECVD) of Si quantum dot (QD) films is presented and discussed. In particular, relating to the Si QD process optimization and control of film growth, the necessity to control the de...
Article
The advanced materials process by non-thermal plasmas with a high plasma density allows the synthesis of small-to-big sized Si quantum dots by combining low-temperature deposition with superior crystalline quality in the background of an amorphous hydrogenated silicon nitride matrix. Here, we make quantum dot thin films in a reactive mixture of amm...
Article
Full-text available
Electron heating mode transitions induced by mixing the low- and high-frequency power in dual-frequency nitrogen discharges at 400 mTorr pressure are presented. As the low-frequency (13.56 MHz) power decreases and high-frequency (320 MHz) power increases for the fixed power of 200 W, there is a transition of electron energy distribution function (...
Article
Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of th...
Article
Full-text available
This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes...
Article
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This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiNx :H) film in radio frequency (RF) and RF–ultra-high frequency (UHF) hybrid plasmas. To study the optimized conditions for the deposition of SiNx :H film, this work adopts a systematic plasma diagnostic approach in the nitrogen–silane and nitrogen–silane–ammonia pl...
Article
Full-text available
Utilizing plasma-assisted deposition by combining an RF magnetron and an inductively coupled plasma (ICP) source it is possible to fabricate highly crystallized nc-Si:H films at a relatively low substrate temperature (300 °C). Microstructural analysis reveals enhancement in crystallinity along with (2 2 0) preferential orientation throughout the de...
Conference Paper
For the recent advancement in the field of plasma medicine, there is growing demand for the atmospheric-pressure plasma (APP) jet sources with desired plasma characteristics. In this study, a stable non-thermal low-voltage APP jet device was designed and developed for optical and electrical characterizations. The jet was operated at very low freque...
Article
This work reports an investigation of the Al-doped ZnO (AZO) film deposition process using ICP assisted DC magnetron plasmas, at different working pressures. The mechanism of plasma formation and plasma properties are analyzed by various diagnostic tools. Data show that there is the presence of low-frequency oscillations in the range of 3–8 MHz, wh...
Article
The present work addresses a systematic approach for measuring the atomic nitrogen radicals using vacuum ultraviolet absorption spectroscopy (VUVAS) in the N 2-SiH 4 PECVD processes using alternate plasma concepts. Measurements using VUVAS and RF compensated Langmuir probe reveal that there is significant enhancement in the radical and plasma densi...
Article
Full-text available
This paper reports the synthesis of flexible indium tin oxide (ITO) films in a dual pulse magnetron sputtering (DPMS) system at low temperature (<100 °C) deposition condition. This study also presents experimental demonstration of the ITO films for their possible use in the fabrication of organic light emitting diode (OLED) device, and the device p...
Article
Full-text available
Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 1011 cm−3) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have...
Article
Full-text available
Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH 4 /H 2 plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), op...
Article
Full-text available
Careful analysis and investigations of the formation mechanism of the microstructure of the hydrogenated nanocrystalline silicon (nc-Si:H) film is presented. A systematic approach is made to understand the transition from amorphous (a-Si:H) to crystalline (nc-Si:H) by incorporating hydrogen dilution using inductively coupled plasma (ICP) assisted m...
Article
Full-text available
Silicon-oxide thin films were deposited on polyethylene-terephthalate (PET) and glass substrates for applications in transparent barrier packaging and replacement display cover glasses by using plasma-enhanced chemical vapor deposition (PECVD). The bias conditions and the input power in the radio-frequency plasma were changed to optimize the gas ba...
Conference Paper
Particle contamination in processing plasma reactors that are designed for deposition, etching, and sputtering applications e.g., for solar cells, flat panel displays, and chip production often plays a crucial role in the quality and the yield of the processed products. Although plasma enhanced chemical vapour deposition (PECVD) is presently still...
Article
Full-text available
Hydrogenated nanocrystalline silicon (nc-Si : H) films intended for efficient nc-Si : H solar cells are usually made at the transition to the nanocrystalline regime using the plasma-enhanced chemical vapor deposition (PECVD) process. This change occurs within a sensitive process window and is affected by various deposition parameters. This paper re...
Article
Full-text available
As a material of current interest compatible with many living organisms, Carbon has shown considerable attention for the application in medicine. To improve and investigate the performances and applications of diamond-like carbon (DLC) films for implantable bio-organs, one has to optimize the synthesis process from the original deposition condition...
Article
Full-text available
As a material of current interest compatible with many living organisms, carbon has received considerable attention for applications in medicine. To improve and investigate the performance and applications of diamond-like carbon (DLC) films for implantable bio-organs, it is important to optimize the synthesis process from the original deposition co...
Article
Full-text available
This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to in...
Article
Full-text available
This work reports investigation of the Al-doped ZnO (AZO) film deposition process, at different working pressures, in a conventional magnetron sputtering system. The primary goal of this study is to investigate the plasma formation and deposition process using various diagnostic tools, by utilizing low-temperature deposition process. In addition, t...
Article
Full-text available
Porous conductive carbon films are useful for application in fuel cells and biomedical sensors. Controllability of the porosity in conductive carbon films was investigated by using unbalanced magnetron sputtering (UBMS). Here, we show through porosity analysis and plasma diagnostics that carbon films can be tuned to have porosity ranging from amorp...
Article
Full-text available
The present work discusses an overview of RF power absorption in helicon plasmas. Analysis suggests that the warm electron population is accountable for the argon plasma ionization in helicon plasma. Along with the experiment, there is an observation of a potential structure, identified as a double layer. However, unlike the other helicon double la...
Article
Full-text available
Articles you may be interested in Effect of thickness on the photoluminescence of silicon quantum dots embedded in silicon nitride films J. Appl. Phys. 113, 233102 (2013); 10.1063/1.4811361 Low temperature plasma synthesis of photoluminescent nanocrystalline silicon-nitride AIP Conf. Proc. 1447, 313 (2012); 10.1063/1.4710005 Room temperature synthe...
Article
Full-text available
The ability of the KSTAR 170 GHz electron cyclotron (EC) wave launcher to drive a localized current is analyzed by means of the TORAY-GA ray-tracing code looking at extended physics application of the EC current drive (CD) in the KSTAR. Computation reveals that the EC-driven CD performance (J CD ), as compared to the plasma’s boot-strap current (J...
Article
Full-text available
The paper presents investigations of current free double layer (CFDL) that forms in helicon plasmas. In contrast to the other work reporting on the same subject, in the present investigations the double layer (DL) forms in a mirror-like magnetic field topology. The RF compensated Langmuir probe measurements show multiple DLs, which are in connectio...
Article
Full-text available
A combination of three strong current free double layers (CFDLs) characterized by strength (eΔΦ/Te) ~ 10 and widths (Δz/λD) ~ 7.6, 8, and 8.3 has been observed in argon helicon plasma. In contrast to other works report on the same subject, in the present investigations the DLs form in a mirror-like magnetic field topology and present in the plateau...
Article
Full-text available
This paper investigates the formation of double layer (DL) in helicon plasmas. In the experiment, argon plasma production is using the excitation of m = −1 helicon mode with magnetic mirror field with high mirror ratio of ∼1:1.7. We have specifically used the radio frequency compensated Langmuir probe (LP) to measure the relevant plasma parameters...
Article
Full-text available
This paper presents a comprehensive overview of work on the helicon plasmas and also discusses various aspects of RF power deposition in such plasmas. Some of the work presented here is a review of earlier work on theoretical [A. Ganguli et al., Phys. Plasmas 14, 113503 (2007)] and experimental [A. Ganguli et al., Plasma Sources Sci. Technol. 20(1)...
Article
Full-text available
This paper presents the investigations of the helicon (H) and associated Trivelpiece-Gould (TG) modes inside a cold, uniform, lossy plasma column loaded inside a conducting waveguide. Contrary to expectation, radial damping of the short wavelength TG modes at the high magnetic fields used typically in the experiments (ωce / ω ≥ 20) is seen to be ra...
Article
Full-text available
This paper presents the mathematical approach to find out the electric and magnetic fields associated with a cylindrical plasma column loaded inside a wave guide. The plasma is assumed to be cold, uniform. Starting with the cold plasma dielectric tensor and using Maxwell's equations and later by solving the Bessel differential equation, the electro...
Article
Full-text available
This paper investigates the mechanisms by which the helicon and associated Trivelpiece–Gould waves are absorbed in helicon discharges produced in conducting chamber; the experiments were based on a recent theory of damping and absorption of helicon modes in conducting waveguides (Ganguli et al 2007 Phys. Plasmas 14 113503). In particular, it was al...
Article
Full-text available
This paper presents the dispersion relation for a cold, collisionless and uniform plasma column loaded in a conducting waveguide. This is then solved numerically for the m = − 1 whistler mode at frequency 13.56 MHz for various plasma parameters. The wave dispersion characteristics have been studied. The structures of wave field patterns are also st...