Baoying Dou

Baoying Dou
Beijing Computational Science Research Center | CSRC · Department of Physics

About

6
Publications
694
Reads
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14
Citations
Citations since 2016
6 Research Items
14 Citations
2016201720182019202020212022024681012
2016201720182019202020212022024681012
2016201720182019202020212022024681012
2016201720182019202020212022024681012
Introduction

Publications

Publications (6)
Article
NiO, as a promising transparent p-type semiconductor, was intensively studied in experiment. Due to the difference of fabrication methods and defects concentration, it is difficult to make meaningful comparisons. In this work, the performance for Cu and Ag-doped NiO is fully evaluated by using the density functional theory method. Electronic struct...
Article
Using first-principles calculations, the structural, electronic, and defect properties of AgInSe2 (AIS), AgGaSe2 (AGS), and their alloys (AIGS) are systematically studied and compared with their Cu counterparts as potential candidates for thin-film solar cell absorbers. The bandgap energies of AIS (1.24 eV) and AGS (1.84 eV) are larger than their C...
Article
Full-text available
Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2-Si) structures at room temperature has been modeled by a uniform generation of E′γ centers in the bulk silica region through the capture of irradiati...
Article
ZnO and SnO2 are wide bandgap semiconductors, which have great potential for UV detectors, light emitting diodes, and other optoelectronic devices. The performance of these devices is significantly affected by exciton binding energies of oxides. Although bandgaps of ZnO and SnO2 are similar, their exciton binding energies differ by a large amount,...
Article
Full-text available
Co-doping is an important method to improve doping properties in semiconductors, which is expected to lower the defect formation energy through the Coulomb interaction or covalent coupling between co-dopants and reduce the transition energy level through the level repulsions. However, the effectiveness of co-doping is sensitive to the type of co-do...
Article
Full-text available
Group-V substitution at the Te site, XTe (X = P, As, Sb), under Cd-rich conditions is an effective way to enhance the hole density and, in the meantime, suppresses the dominant nonradiative carrier recombination center in CdTe, thus, improving the performance of CdTe thin-film solar cells. However, it is not clear which group-V dopant, X, is the mo...

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