Arnab K Majee

Arnab K Majee
University of New Mexico | UNM · Department of Electrical and Computer Engineering

Doctor of Philosophy

About

15
Publications
3,938
Reads
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318
Citations
Citations since 2016
14 Research Items
315 Citations
20162017201820192020202120220102030405060
20162017201820192020202120220102030405060
20162017201820192020202120220102030405060
20162017201820192020202120220102030405060

Publications

Publications (15)
Article
Full-text available
Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor deposition (CVD), the most popular method for wafer-scale growth of graphene, produces monolayers that are polycrystalline, where misoriented grains are separated by extended g...
Article
Full-text available
While two-dimensional (2D) materials have emerged as a new platform for nanoelectronic devices with improved electronic, optical, and thermal properties, and their heightened sensitivity to electrostatic and mechanical interactions with their environment has proved to be a bottleneck. Few-layer (FL) 2D devices retain the desirable thinness of their...
Article
Full-text available
The impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials is discussed herein. Recent progress in understanding electronic transport in heterostructures of 2D materials ranging from graphene to transition metal dichalcogenides, their homojunctions (grain boundaries), lateral heterojunctions (...
Preprint
Full-text available
In this review, we discuss the impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials. We review recent progress in understanding electronic transport in two-dimensional (2D) materials ranging from graphene to transition metal dichalcogenides (TMDs), their homojunctions (grain boundaries), lat...
Article
Full-text available
The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely studied, both theoretically and experimentally. On the other hand, fast transients and frequency dynamics of thermal conduction has been given less attention. The frequency response of thermal conductivity has become more crucial in recent years...
Article
Full-text available
We study the impact of grain boundaries (GB) and misorientation angles between grains on electronic transport in 2-dimensional materials. Here we have developed a numerical model based on the first-principles electronic bandstructure calculations in conjunction with a method which computes electron transmission coefficients from simultaneous conser...
Article
Full-text available
In many device architectures based on 2D materials, a major part of the heat generated in hot-spots dissipates in the through-plane direction where the interfacial thermal resistances can significantly restrain the heat removal capability of the device. Despite its importance, there is an enormous (1–2 orders of magnitude) disagreement in the liter...
Article
Full-text available
Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2 -graphene heterostruc...
Article
Full-text available
Thermal properties of graphene have attracted much attention, culminating in a recent measurement of its length dependence in ribbons up to 9 μm long. In this paper, we use the improved Callaway model to solve the phonon Boltzmann transport equation while capturing both the resistive (umklapp, isotope, and edge roughness) and nonresistive (normal)...
Article
Full-text available
Graphene has served as the model 2D system for over a decade, and the effects of grain boundaries (GBs) on its electrical and mechanical properties are very well investigated. However, no direct measurement of the correlation between thermal transport and graphene GBs has been reported. Here, we report a simultaneous comparison of thermal transport...

Questions

Questions (4)
Question
I am going through the literature to gather information about the densities of vacancies and interstitials in group IV materials. Literature seems to suggest that vacancies and interstitials are created using separate methods. For instance, vacancies could be created by heating the crystal and then by rapidly cooling it down, whereas the interstitials are created by irradiation. My naive intuition says whenever a vacancy is created, an interstitial must be created as well; am I wrong? Can someone please clarify?
Thanks!
Question
for some reason, i get different slopes for positive and negative magnetic field.
Question
Hi,
Can someone help me out with the following questions or point me towards relevant literature?
1. What is the electron mobility in bulk WSe2 crystals?
2. And how does it depend on temperature?
Thanks in advance!

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