Andrew G Norman

National Renewable Energy Laboratory | NREL · Chemical and Materials Science Center

Coincident site lattice-matched wurtzite (0001) In{sub 0.31}Ga{sub 0.69}N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl{sub 2}O{sub 4} spinel substrate. The coincident site lattice matching condition involves a 30 deg. rotation between the lattice of the InGaN epitaxial layer and...

Transmission electron microscopy studies of GaAs1-xBix layers grown at low temperature by molecular beam epitaxy have revealed evidence of both atomic ordering and phase separation. In layers containing up to ∼10% Bi, the two variants of CuPtB-type atomic ordering on {111}B planes were observed and this is believed to be associated with the surface...

This work demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) inter...

Single-junction flat-plate terrestrial solar cells are fundamentally limited to about 30% solar-to-electricity conversion efficiency, but multiple junctions and concentrated light make much higher efficiencies practically achievable. Until now, four-junction III–V concentrator solar cells have demonstrated the highest solar conversion efficiencies....

A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III–V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sit...

Despite the record-high efficiency of GaAs solar cells, their terrestrial application is limited due to both the particularly high costs related to the required single-crystal substrates and epitaxial growth. A water-soluble lift-off layer could reduce costs by avoiding the need for toxic and dangerous etchants, substrate repolishing, and expensive...

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photol...

MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential...

Al1–xGdxN is one of a series of novel heterostructural alloys involving rare earth cations with potentially interesting properties for (opto)electronic, magnetic, and neutron detector applications. Using alloy models in conjunction with density functional theory, we explored the full composition range for Al1–xGdxN and found that wurtzite is the gr...

Al_xGa_{1-x}N$ is a critical ultra-wide bandgap material for optoelectronics, but the deposition of thick, high quality epitaxial layers has been hindered by a lack of lattice-matched substrates. Here we identify the (111) face of transition metal carbides as a suitable class of materials for substrates lattice matched to (0001) $Al_xGa_{1-x}N$ and...

Al1−xGdxN is one of a series of novel heterostructural alloys involving rare earth cations with potentially interesting properties for (opto)electronic, magnetic and neutron detector applications. Using alloy models in conjunction with density functional theory, we explored the full composition range for Al1−xGdxN and found that wurtzite is the gro...

Exploiting the extraordinary transport and optical properties of 3D topological semimetals for device applications requires epitaxial integration with semiconductors to carefully control carrier transport, yet no studies have established heteroepitaxy on top of any topological semimetals to date. Here, a novel approach toward fabricating heterostru...

The three-dimensional Dirac semimetal Cd3As2 exhibits ultrahigh electron mobilities that are attractive for optoelectronic devices. However, its strong propensity to grow in the (112) orientation limits the feasibility to epitaxially integrate it into semiconductor structures that are conventionally grown in the (001) orientation. Here, we demonstr...

The current popularity of photovoltaic (PV) systems is due in large part to their exceptional reliability and significantly lower cost than other energy sources. Studying cell and module degradation is key to promote further development in the state of the art. Fielded oraccelerated aged modules exhibit different failure modes, of which metallizati...

Exploiting the high surface-area-to-volume ratio of nanomaterials to store energy in the form of electrochemical alloys is an exceptionally promising route for achieving high-rate energy storage and delivery. Nanoscale palladium hydride is an excellent model system for understanding how nanoscale-specific properties affect the absorption and desorp...

In this work, we demonstrate that the surface layers of single-crystal layered-2D Bi2Se3 can be converted to layered-2D rhombohedral β-In2Se3 by annealing under a trimethylindium (TMIn) flux. Samples were prepared in a metalorganic chemical vapor deposition (MOCVD) chamber, then transferred under vacuum to a surface analysis chamber for analysis wi...

Beta-gallium oxide (β-Ga2O3) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow β-Ga2O3 crystals from the melt. In this work, vertical β-Ga2O3 Schot...

Silicon (Si) anodes have the potential to greatly improve the energy density of lithium-ion batteries due to the greater specific capacity of Si relative to standard graphite (Gr) anodes (1). However, Si anode implementation is limited by issues such as volumetric expansion during cycling and an unstable solid-electrolyte interphase (SEI). Composit...

CuGa3Se5 is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact layers used with other chalcopyrite absorbers are not suitable for CuGa3Se5 due to the higher position of its conduction band minimum. MgxZn1-xO is a transparent oxide with...

Alloying anode materials for lithium-ion batteries, such as silicon (Si), are an important focus of materials research due to the demand for increased energy density for electric vehicles and stationary grid storage. However, progress towards next generation anode materials has been hindered by poor capacity retention due to the instability of the...

The accumulation of plastic waste in the environment has prompted the development of new chemical recycling technologies. A recently reported approach employed homogeneous organometallic catalysts for tandem dehydrogenation and olefin cross metathesis to depolymerize polyethylene (PE) feedstocks to a mixture of alkane products. Here, we build on th...

Direct growth of III–V semiconductors on Si promises to combine the superior optoelectronic properties of III–Vs with the existing large-scale fabrication capabilities for Si. Vapor-liquid-solid-based growth techniques have previously been used to grow optoelectronic-quality III–Vs in polycrystalline films and various photolithography-defined featu...

Silicon (Si) is a promising anode material for high-energy-density lithium-ion batteries (LIBs), but its short calendar life and poor cycling performance prevent its large-scale adoption. Introducing magnesium (Mg) salt into the electrolyte has been recently shown to form a ternary Li-Mg-Si Zintl phase upon lithiation of Si and improve the cycling...

Silicon (Si) is a promising anode material for high energy density lithium-ion batteries (LIBs) but its poor cycling performance prevents its large-scale adoption. Introducing Mg salt into the electrolyte has shown to form a ternary Li-Mg-Si Zintl phase upon lithiation of Si and improve the cycling stability; however, its formation mechanism and im...

Silicon has been investigated in recent years as an alloying anode material to enhance gravimetric energy density in lithium-ion batteries. While recent developments have suggested that silicon oxides exhibit improved cycling stability over pure Si, the origin of the improved cycling performance is still poorly understood. The initial solid electro...

CuGa_3Se_5$ is a promising candidate material with wide band gap for top cells in tandem photovoltaic (PV) and photoelectrochemical (PEC) devices. However, traditional CdS contact layers used with other chalcopyrite absorbers are not suitable for $CuGa_3Se_5$ due to the higher position of its conduction band minimum. $Mg_xZn_{1-x}O$ is a transparen...

As thin film cadmium telluride (CdTe) solar cells gain prominence, one particular challenge is optimizing contacts and their interfaces to transfer charge without losses in efficiency. Back contact recombination is still significant and will prevent CdTe solar technology from reaching its full potential in device efficiency, and transparent back co...

Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N{_2} materials. In this work, we present heteroepitaxial ZnGeN{_2} grown...

Recently theorized hybrid II-IV-N2 / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N2 materials. In this work, we present heteroepitaxial ZnGeN2 grown on GaN bu...

Photovoltaic devices based on Cu(In,Ga)Se2 (CIGS) typically employ polycrystalline thin films as the absorber layer. This is because, to date, the highest conversion efficiencies have been attained with polycrystalline CIGS films. Recently, Nishinaga et al. presented an epitaxial CIGS thin-film solar cell grown on a GaAs (100) substrate with a conv...

Analytical microscopy of model Si battery electrodes

Because of the complexity, high reactivity, and continuous evolution of the silicon-electrolyte interphase (SiEI), "individual" constituents of the SiEI were investigated to understand their physical, electrochemical, and mechanical properties. For the analysis of these intrinsic properties, known SiEI components (i.e., SiO2, Li2Si2O5, Li2SiO3, Li3...

Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film...

Two-dimensional sulfides and their heterostructures have emerged as potentially useful materials for technological applications. Controllable self-assembly of interleaved crystalline heterostructures from designed thin-film precursors has been demonstrated in selenide and telluride chemical systems, but not yet in sulfide chemistries. Preparing suc...

The cover image is based on the Research Article Characterization and modeling of reverse‐bias breakdown in Cu(In,Ga)Se2 photovoltaic devices by Harvey Guthrey et al., https://doi.org/10.1002/pip.3168.

The stabilization of a silicon-electrolyte interphase (SiEI) is a great challenge which limits the ability to approach theoretical capacity limits (about 3,600 mAh g ⁻¹ , almost 10 times higher than that of graphite) in silicon (Si) anodes for next-generation lithium-ion batteries (LiBs). The SiEI is a less studied topic relative to the research de...

In recent years, the solid electrolyte interphase (SEI) has been recognized as a critical component of the lithium-ion battery (LIB) system. As battery applications in electric vehicles and stationary storage drive demand for higher energy density LIBs, alternative anode materials are being investigated to replace the current graphite-based anode....

Partial shading of series‐connected thin‐film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field‐deployed modules due to the myriad of environmental factors that can result in partial shading. I...

In article no. 1800303, Chuanxiao Xiao, Chun‐Sheng Jiang, and co‐workers report a new potential‐induced degradation (PID) mechanism for crystalline silicon. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and...

We report on the microscopic structure of the SiOx layer and the transport mechanism in polycrystalline Si (poly-Si) passivated contacts, which enable high-efficiency crystalline Si (c-Si) solar cells. Using electron beam induced current (EBIC) measurements, we accurately map nanoscale conduction-enabling pinholes in 2.2nm thick SiOx layers in a po...

This paper reports a new potential‐induced degradation (PID) mechanism for crystalline silicon (c–Si), where Na diffuses everywhere and causes large‐area material and junction degradation with point defects. Multiple characterization techniques are combined—Kelvin probe force microscopy, electron‐beam induced current, dark lock‐in thermography, tra...

We have examined the influence of an incorporating surfactant on chemical ordering in GaAsN:Bi alloys. Epitaxy with a (2 × 1) reconstruction leads to the formation of GaAsN alloys, while the introduction of a Bi flux induces long-range chemical ordering of the {111} planes of GaAsN:Bi. We propose a mechanism in which Bi enhances the alignment of di...

Silicon is a promising candidate for the lithium ion battery (LIB) anode because of the order-of-magnitude improvement in capacity over current state-of-the-art graphite anodes. In systems featuring both C and Si anodes, electronic resistivity of the solid-electrolyte interphase (SEI) layer is a critical factor for preventing continuous electrolyte...

The cover image, by Steven P. Harvey et al., is based on the Research Article Investigating PID shunting in polycrystalline silicon modules via multiscale, multitechnique characterization, DOI: 10.1002/pip.2996.

Magnesium-based batteries possess potential advantages over their lithium counterparts. However, reversible Mg chemistry requires a thermodynamically stable electrolyte at low potential, which is usually achieved with corrosive components and at the expense of stability against oxidation. In lithium-ion batteries the conflict between the cathodic a...

We investigated the potential-induced degradation (PID) shunting mechanism in multicrystalline-silicon photovoltaic modules by using a multiscale, multitechnique characterization approach. Both field-stressed modules and laboratory-stressed mini modules were studied. We used photoluminescence, electroluminescence, and dark lock-in thermography imag...

ZnSiP2 is a wide band gap material that is lattice matched with Si, offering the potential for Si-based optoelectronic materials and devices, including multijunction photovoltaics. We present a carbon-free chemical vapor deposition process for the growth of both epitaxial and amorphous thin films of ZnSiP2–Si alloys with tunable Si content on Si su...

Photovoltaic conversion efficiencies of 32.6 ± 1.4% under the AM1.5 G173 global spectrum, and 35.5% ± 1.2% at 38-suns concentration under the direct spectrum, are demonstrated for a monolithic, dual-junction 1.7/1.1 eV solar cell. The tandem cell consists of a 1.7 eV GaInAsP top-junction grown lattice-matched to a GaAs substrate, followed by a meta...

Novel exfoliated 2D layered substrates for III-V epitaxy

In this work, we present an exfoliation method which produces cm²-area atomically flat surfaces from bulk layered single crystals, with broad applications such as for the formation of lateral heterostructures and for use as substrates for van der Waals epitaxy. Single crystals of Bi2Se3 were grown using the Bridgman method and examined with X-ray r...

The cover image, by Brittany L. Smith et al., is based on the Short Communication InAlAs photovoltaic cell design for high device efficiency, DOI: 10.1002/pip.2895.

The cover image, by Adam Stokes et al., is based on the Research Article Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se2 solar cells, DOI: 10.1002/pip.2883.

(S)TEM studies of defects related to PID in stressed Si PV modules.

Growth of ZnSiP2 on Si

The effects of alkali diffusion and post-deposition treatment in three-stage processed Cu(In,Ga)Se2 solar cells are examined by using atom probe tomography and electrical property measurements. Cells, for which the substrate was treated at 650°C to induce alkali diffusion from the substrate prior to absorber deposition, exhibited high open-circuit...

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency...

Quaternary GaInAsP solar cells with a bandgap of ~1.7 eV offer an attractive Al-free alternative to AlGaAs solar cells for integration in next generation of III-V multijunction solar cells with five or more junctions. Development of a high quality 1.7 eV solar cell is also highly sought for III-V/Si tandem solar cells. In this work, we systematical...

In this work we develop control over dislocation glide dynamics in GaxIn1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering of the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased...