Andreo Crnjac

Ruđer Bošković Institute | RBI · Division of Experimental Physics

Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore the radiation tolerance of...

The energy loss of protons, in the range between 1.6 MeV and 6 MeV, in a 3.5 μm thick single-crystal diamond membrane was determined by the transmission method. The thickness and surface uniformity of the target were checked by two independent techniques before ion beam irradiation. The stopping power of diamond was evaluated from these data and co...

Telescope detectors have long been studied for their capability of discriminating the type of radiation detected. Silicon is the most widely used material for solid-state detectors. However, in many nuclear physics experiments and medical applications, diamond offers significant advantages due to its outstanding features, such as a near tissue equi...

In this work the utilization of the Ion Beam Induced Charge (IBIC) technique is explored to assess the resolution a 2 MeV Li + ion microbeam raster scanning a micrometre-sized FIB-machined hollows in a silicon photodiode. The analysis of the maps crossing the FIB machined structures evidenced a drop in charge collection efficiency across the perime...

The development of semiconductor detectors with an increased tolerance to high radiation levels often results in devices that deviate significantly from those of the classical design with planar electrodes. Decreasing the charge drift distance and/or introducing localised charge multiplication volumes are two detector development strategies that ar...

Synthetic single crystal diamond grown using the chemical vapor deposition technique constitutes an extraordinary candidate material for monitoring radiation in extreme environments. However, under certain conditions, a progressive creation of space charge regions within the crystal can lead to the deterioration of charge collection efficiency. Thi...

Diamond detectors are increasingly being used in many multidisciplinary areas due to their good spectroscopy properties. However, in certain cases of diamond employment as a nuclear detector, a significant deterioration of the signal properties due to the trapping of free charge carriers by defects can be observed. This phenomenon is known as polar...

The capability of single crystal diamonds to maintain their unique electronic properties even at high temperatures is, in particular, relevant for its applications as a radiation detector. In order to explore characteristics of charge transport at high temperatures (up to 450 °C), diamond was exposed to MeV energy ions, both, to induce radiation da...

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600–750 nm spectral range. Characterization at liquid He te...

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He...

The differential cross sections of the ⁹Be(³He,pi)¹¹B reactions for i = 0–6 were determined within the laboratory energy range 1.24–2.87 MeV and for backward angles from 107° to 164° with 2° steps using two double sided silicon strip detectors. The obtained cross sections covered the angle and energy ranges typically used for the analysis of beryll...

Diamond, as a wide band-gap semiconductor material, has the potential to be exploited under a wide range of extreme operating conditions, including those used for radiation detectors. The radiation tolerance of a single-crystal chemical vapor deposition (scCVD) diamond detector was therefore investigated while heating the device to elevated tempera...

We present two new experimental arrangements designed to study time dependent processes during the irradiation of semiconductor detectors using ion microbeams. The first one is based on an upgraded pulsed beam irradiation setup of the RBI heavy ion microprobe. Controlled time-sequences of sample irradiation and intermediate IBIC probing is used to...