Andreas Fuchsberger

TU Wien | TU Wien · Institute of Solid State Electronics

Si1-xGex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. Importantly SiGe and Ge are promising materials to enable higher drive currents, reduced power consumption and enhanced switching speeds. However, despite considerable efforts in metal-silicide and-germanide compound material systems, reliability conce...

Reconfigurable field-effect transistors, capable of being dynamically programmed during run-time, overcome the static nature of conventional complementary metal-oxide semiconductors by reducing the transistor count and the circuit path delay. Thereby, SiGe and Ge are predicted to boost drive currents, switching speed and to reduce power consumption...

High-quality electrical contacts are of utmost importance for nanoscale devices as they have a large impact on their electrical performance, reliability and reproducibility. Furthermore, as the CMOS scaling is about to approach fundamental physical limits, new device concepts are needed to further increase the functionality of electronic systems....