B.Tech[ECE] , M.Tech[ECE], GATE[ECE & EE & IE:11 Times], UGC NET-JRF[Electronic Science:5 Times], PhD[JNU]
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
Advancement in the technology and device engineering has a huge impact on the evolution of biosensors and their designing principles. Various biosensors have been designed and reported depending upon the application it will be serving. Different biosensors have played an important role in vital applications in multifarious fields such as medical fi...
This paper presents for the first time an analytical model of a dielectric modulated surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows excellent improvement in sensitivity when compared to a silicon source. The mathematical analysis is based on the center-channel potential which is obtained by solving Poisson's equ...
This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, chan...
This paper proposes a novel dielectric modulated step-graded germanium source biotube FET for label-free biosensing applications. Its integrated structure and unique design combine the benefits of the gate stack, germanium source, triple-gate architecture, and a step-graded biotube channel, resulting in superior performance over existing biosensors...
This paper critically investigates the effect of doping on different device characteristics of a Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The doping of source, channel, and drain has a prominent effect on important device characteristics, which has been investigated through DC and AC analysis performed on the S...
A simulation based novel and unique approach of controlling and modulating the threshold voltage sensitivity of a short channel surrounding gate MOSFET biosensor is investigated for improved biosensing applications. Different results show that the biosensor with symmetric doping is more sensitive to charged and neutral biomolecules when compared wi...
As a research scholar, I feel that a lot of time is wasted in preparing a manuscript according to a journal format. The worst part is that if the paper gets desk rejected, then we have to prepare the manuscript in some other journal style. A lot of time is wasted in this cycle.
When the paper can be type set by the journal after getting accepted, then why dont journal allow a general free format submission.
Field: VLSI/Microelectronics/Solid State Electronics
I am from the VLSI field, and many times, a comment comes regarding the fabrication process flow of surrounding gate MOSFET structures. I wonder how to draw the 3D MOSFET (concentric cylinders) or the fabrication process flowchart with block diagrams. Which software do you use to draw similar things? I am attaching a picture for reference.
Any response is appreciated.
Thanks and regards
When we measure voltage across a isolated diode, what will the voltmeter read?
1) 0 V but voltmeter shows a non zero value which is approximately equal to built-in voltage.
2) Built in voltage but if it's the case then why can't we use diode as a voltage source?
PS : I was taught in my bachelors that we get a 0V reading across diode which is the algebraic sum of built in voltage and the voltage across metal(wire)-semiconductor interface.
I have a query :
I had written a paper few months ago and its prepreint is floating online.
Query: I want to add more additional results along with modeling in that paper and submit it to some other journal. Can I do the same because a preprint is already floating online? Won't it count in the plagiarism count by the detector? I mean I know preprint is also my earlier version of the same paper but software dont.
Kindly help me with this.
I plan to divide my long research article(simulation + mathematical) into two parts, but I am clueless about how to do this. (I can not separate the simulation and mathematical analysis)
I have a few questions regarding the same
1) Do I need to show the common mathematics in both parts?
2) Can the introduction be the same?
3) Can some explanations remain the same in both parts?
Can someone give me the reference of any article divided into two parts?