Alon Ascoli

Alon Ascoli
Technische Universität Dresden | TUD · Institute of Circuits and Systems

About

127
Publications
9,715
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2,273
Citations
Citations since 2016
73 Research Items
1795 Citations
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20162017201820192020202120220100200300
20162017201820192020202120220100200300

Publications

Publications (127)
Article
The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predict...
Article
In this work, we explore pattern formation dynamics across a diffusively coupled Memristor Cellular Nonlinear Network (MCNN), which is composed of identical cells with locally active memristors. We bias the cells on the Edge-of-Chaos (EOC), introduce a systematic design procedure to induce complexity in the array, and extract the element values ana...
Article
Memristors are promising nanoelectronic devices for the implementation of future AI-driven sensor-processor electronic systems, which are essential for the ongoing digitalization of our world. Accurate and computationally cost-effective models for the manufactured memristors are essential for the design of such systems, especially for the simulatio...
Article
Full-text available
This manuscript provides a comprehensive tutorial on the operating principles of a bio-inspired Cellular Nonlinear Network, leveraging the local activity of NbOx memristors to apply a spike-based computing paradigm, which is expected to deliver such a separation between the steady-state phases of its capacitively-coupled oscillators, relative to a...
Article
No isolated system may ever support complexity. Emergent phenomena may however appear in an open system, if, as established by the Edge of Chaos theory, some of its constitutive elements feature the capability to amplify infinitesimal fluctuations in energy, provided an external source supplies them with a sufficient amount of DC power, which is kn...
Chapter
In this work, we present an application of the local activity theory by demonstrating the emergence of complex patterns in a Memristor Cellular Nonlinear Network (M-CNN) structure. The proposed M-CNN structure consists of identical memristive cells, which are resistively coupled to each other in a two-dimensional (2-D) grid form. Each cell contains...
Article
One of the complex phenomena, which most attracted the attention of the scientific community over the past few decades, is the emergence of diffusion-driven instabilities in homogeneous cellular media. Explaining this symmetry-breaking process, which the Russian luminary Ilya Prigogine referred to as the Instability of the Homogeneous, is only poss...
Article
This paper presents an analytical investigation of the transient and steady-state response of non-volatile memristors to high frequency periodic inputs, using as a case study a $\textrm{TaO}_\textrm{x}$ -based nano-scale memristor model derived at HP Labs. For the first time, we provide a mathematical proof for the fading memory phenomenon in mem...
Article
We present a compact, continuous, and numerically stable version of a tantalum oxide (TaOx) memristor model which can be employed for robust and reliable simulations of large scale memristor based circuits. The original model contains a piecewise differentiable function in the memductance expression and discontinuous step functions in the state equ...
Article
This paper presents a circuit-theoretic analysis of a NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -Mott memristor fabricated at Hewlett-Packard Labs. It investigates mechanisms behind the origin of complexity based on local activity, which characterizes the behavior of this outstanding...
Article
We present and experimentally validate two minimal compact memristive models for spiking neuronal signal generation using commercially available low-cost components. The first neuron model is called the Memristive Integrate-and-Fire (MIF) model, for neuronal signaling with two voltage levels: the spike-peak, and the rest-potential. The second model...
Chapter
Full-text available
This chapter presents the mathematical investigation of the emergence of static patterns in a Reaction–Diffusion Memristor Cellular Nonlinear Network (RD-MCNN) structure via the application of the theory of local activity. The proposed RD-MCNN has a planar grid structure, which consists of identical memristive cells, and the couplings are establish...
Article
Full-text available
The introduction of nano-memristors in electronics may allow to boost the performance of integrated circuits beyond the Moore era, especially in view of their extraordinary capability to process and store data in the very same physical volume. However, recurring to nonlinear system theory is absolutely necessary for the development of a systematic...
Article
Full-text available
Local activity is the capability of a system to amplify infinitesimal fluctuations in energy. Complex phenomena, including the generation of action potentials in neuronal axon membranes, may never emerge in an open system unless some of its constitutive elements operate in a locally active regime. As a result, the recent discovery of solid-state vo...
Article
The main focus of this paper is the presentation of reliable methods for the determination of the optimum coloring of a graph, commonly known in the literature as vertex coloring problem. It has been shown that networks of capacitively coupled oscillators can be used to solve vertex coloring problems. In this paper we address the negative impact of...
Article
In the memristive version of a standard space-invariant Cellular Nonlinear Network, each cell accommodates one first-order non-volatile memristor in parallel with a capacitor. In case, the resistance switching memory may only undergo almost-instantaneous switching transitions between two possible resistive states, acting at any time, as either the...
Article
If the memristor, used in each cell of a memristive variant of the standard space-invariant Cellular Nonlinear Network (CNN), undergoes analogue memductance changes, the processing element operates as a second-order system. The Dynamic Route Map (DRM) technique, applicable to investigate first-order systems only, is no longer relevant. In this manu...
Article
This paper presents the theory of a novel memcomputing paradigm based upon a memristive version of standard Cellular Nonlinear Networks. The insertion of a nonvolatile memristor in the circuit of each cell endows the dynamic array with the capability to store and retrieve data into and from the resistance switching memories, obviating the current n...
Article
The memristor represents the key circuit element for the development of the constitutive blocks of future non-volatile memory architectures and neuromorphic systems. However, resistance switching memories offer a plethora of further opportunities for the electronics of the future. By virtue of the compatibility between the well-established CMOS tec...
Conference Paper
Full-text available
Niobium Oxide is a very interesting material for resistive switching devices since it can produce a number of different switching characteristics like abrupt unipolar switching, abrupt bipolar switching, threshold switching and analogue switching [1]. In this talk the focus will be on the latter two switching characteristics. While the threshold sw...
Article
Niobium oxide devices exhibit threshold switching behavior which enables their use as selectors in memory arrays or as locally active devices for neuromorphic computing. Among the basic dynamical phenomena appearing in non-linear circuits, the oscillations generated in a relaxation oscillator, which is making use of the negative differential resist...
Article
Full-text available
In this work the I – V characteristics of a niobium oxide-based threshold switching device were optimized to match the requirements for its application in neuromorphic circuits. Those neuromorphic circuits rely on coupled oscillators utilizing the volatile resistive switching effect of the memristor. A large voltage extension of the negative differ...
Article
The main focus of this paper is the evolution of complex behavior in a system of coupled nonlinear memristor circuits depending on the applied coupling conditions. Thereby, the parameter space for the local activity and the edge-of-chaos domain will be determined to enable the emergence of the pattern formation in locally coupled cells according to...
Chapter
Tremendous efforts are made towards the development and realization of memristors for memory technology. Furthermore, memristor-based neuron and synapse models are considered in several investigations on neuromorphic systems. Some work is devoted to take advantage of peculiar nonlinear dynamics emerging in memristors to extend or improve the functi...
Article
Full-text available
A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed b...
Article
In this paper we provide a complete analytical model for the time evolution of the state of a real-world memristor under any DC stimulus and for all initial conditions. The analytical DC model is derived through the application of mathematical techniques to Strachan’s accurate mathematical description of a tantalum oxide nano-device from Hewlett Pa...
Article
Myon is a humanoid robot where each joint is controlled independently by a supervised bio-inspired artificial neural network inducing the correction of a number of distinct actions depending on the excitation. One of the control strategies, which the network, located within a certain joint, may implement, allows a controlled motion of the limb conn...
Article
Neuromorphic circuits shall be considered in electronics to perform complex computing tasks in a time-efficient and energy-efficient fashion and to adapt their problem-solving methodologies to changes in initial conditions and parameters. One of the key biological paradigms at the basis of their operation, allowing them to exhibit higher performanc...
Article
According to the axiomatic definition of the memristor from 1971, its properties are unambiguously determined by the memristance versus charge (or flux) map. The original model of the ‘HP memristor’ introduces this map via a linear function that represents this memristor as a variable resistor whose resistance is linearly dependent on the amount of...
Conference Paper
Full-text available
Given the complexity of the mathematical descriptions of real nanodevices with memristor fingerprints, convergence issues often emerge in the simulation of circuits employing memristors, even for a limited number of instances. Actually the simulation of one-memristor circuits may also be troublesome for some inputs and/or initial conditions. This p...
Article
Full-text available
We demonstrate the direct biosensing of the Ebola VP40 matrix protein, using a memristor mode of a liquid-integrated nanodevice, based on a large array of honeycomb-shaped silicon nanowires. To shed more light on the principle of biodetection using memristors, we engineered the opening of the current-minima voltage gap VGAP by involving the third g...
Article
For the first time, the model of a physical nano-scale memristor is integrated analytically. A closed-form expression for the time evolution of the device memristance during the turn-on process is mathematically derived. The complexity of the inverse imaginary error function-based analytical formula clearly reflects the high degree of nonlinearity...
Chapter
This paper proposes the introduction of appropriate continuous and differentiable approximations to discontinuous and piecewise differentiable functions respectively adopted in state equation and Ohm’s based law of the mathematical model of an extended memristor recently fabricated at Hewlett Packard labs. The study of this model is particularly ti...
Chapter
In a recent publication (Yi et al. 2011) elucidating a possible scheme to write information reliably onto a memory crossbar, Hewlett Packard Labs researchers employed a thyristor-based circuit to emulate the off-to-on switching behaviour of a titanium oxide memristor. The use of a thyristor device allowed them to test inexpensively and reliably the...
Article
The tantalum oxide memristor may have a promising future as key element in innovativevery-high speed ultra-low power extra-large density nonvolatile memories. It is therefore timely andrelevant to investigate the nonlinear dynamics of this device in view of the interesting opportunities itmay open up in the world of electronics in the years to come...
Article
Part I has provided theoretical insights on the concept of local fading memory, and analysed a purely mathematical memristor model which, under DC and AC periodic stimuli, experiences memory loss in each of the basins of attraction of two locally-stable state-space attractors. This paper designs the first ever real memristor with bistable stationar...
Article
It was recently shown that a current-controlled extended memristor may exhibit bistable steady-state behaviour under DC as well as AC periodic stimuli. This paper employs standard techniques from the nonlinear dynamics theory as well as circuit and system theoretic concepts to explain the origin of the asymptotic bistable behaviour, which is the si...
Conference Paper
In this work a physics-based spice model for the Nb2O5 volatile thermally-activated micro-scale threshold switching memristor is presented. The dynamic behavior of the spice model is adjusted by the adoption of a Pearson-Anson oscillator. In that way the value of the internal thermal capacitance of the memristors conducting filament can be attained...
Article
This work presents a detailed study of the nonlinear dynamics of a tantalum oxide memristor recently fabricated at Hewlett Packard Labs. Our investigations uncover direct current, quasi-static, and alternating current behavior of the nanodevice. A thorough study of the dynamics emerging in the nanoscale element under various input/initial condition...
Article
This paper investigates the origin of the threshold switching effect in NbO2. It is found that the effect is independent of the metal-insulator-transition but can be explained by a trap-assisted Frenkel-Poole like conduction mechanism in combination with a moderate temperature increase by only 150 K due to Joule heating. These findings lead to the...
Conference Paper
This paper presents an accurate physical model for the threshold switching effect in a Niobium oxide-based memristor. The proposed model takes inspiration from a mathematical description for the device behaviour, recently derived by the application of a nonlinear identification procedure to the differential algebraic equation set of Chua's Unfoldin...