Alka Sharma

Superconducting nanowires have attracted much interest for developing single photon detectors (SPDs), transition edge sensors (TESs), bolometers, and other devices, as they have unique advantages such as minimum energy requirement, low noise, and fast response at cryogenic temperatures. Furthermore, there is demand for such devices and photodetecto...

The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transpor...

Thin films of topological insulators (TIs) possess exotic nonlinear optical properties such as strong light-matter interaction, broadband spectral sensitivity, thickness-dependent tunable bandgap, higher harmonic generation, etc. Due to the presence of metallic surface states with Dirac fermions and an insulating bulk band in TI, they are projected...

We have grown various epitaxial GaN nanostructures on sapphire (11–20) substrates by tuning the buffer layer growth conditions in laser molecular beam epitaxy (LMBE) process. The pre-nitridation and buffer layer GaN growth at low temperature (LT) on sapphire (11–20) critically affect the surface morphology and structural properties. Granular GaN th...

Topological insulators represent a new electronic phase which comes from the topological character of the bulk wave functions in some special materials. These exotic phases can be attributed to the strong spin-orbit interaction and can be explained with the band theory of solids. Recent studies show that topological insulators (TIs) such as Bi2Te3...

High responsivity UV photodetector has been realized by fabricating single crystalline epitaxial GaN-based devices grown on silicon substrate by using molecular beam epitaxy system. The influence of trap states existing within the forbidden gap on GaN-based optoelectronic devices has been investigated. The quality and performance of the fabricated...

A scheme illustrating electrode-engineering in metal-semiconductor-metal geometry is employed for fabricating GaN-based high-performance ultraviolet photodetectors. The effect of different metal-semiconductor (Au, Ti/Al and Al) junctions on photon-assisted charge-carrier transport and the current-conduction is explored. Depending upon work function...

Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystall...

Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystall...

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures- nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melt...

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melti...

A long-standing goal in optical sciences has been to strengthen nonlinear optical effects at lower light powers or pulse energies. In this perspective, strongly-coupled hybrids which offer significant third order optical nonlinearities at low powers are currently a topic of global research. Herein, we report a detailed analysis of third order nonli...

Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions...

Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions...

InN direct band gap semiconductor is a promising material in the nitride family for high power and high frequency optoelectronic devices. However, the reports on photo-sensing ability of the material are limited with photoresponsivity < 1 A/W only. Here, we report fast photoresponse from high quality molecular beam epitaxy grown InN islands deliver...

We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent in the hopping equation was extracted as ~ 1/2 for different widths of nanowires, which is the proof of the presence of Efros-Shklovskii hopping transpor...

We report the experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3). The value of the exponent (d + 1)⁻¹ in the hopping equation was extracted as \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepack...

The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exh...

The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exh...

The rising demand for optoelectronic devices to be operable in adverse environments necessitates the sensing of ultraviolet (UV) radiation. Here, a self-driven, highly sensitive, fast responding GaN nanoflower based UV photodetector is reported. By developing unique structures, the light absorption increases efficiently and a maximum responsivity o...

Hot electron injection in 2D layered materials, in particular graphene or transition metal dichalcogenides, has been the subject of intense research in recent years. The coupling of plasmonic nanostructures with the nanolayers of 2D materials enhances the optoelectronic properties even beyond the bandgap of the material and depends on the tuning of...

We report the fabrication of ultravioletphotodetector on non-polar (11–20), nearly stress free, Gallium Nitride(GaN)film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaNultravioletphotodetector exhibited a high r...

Hot electron injection in 2D layered materials, in particular graphene or transition metal dichalcogenides, has been the subject of intense research in recent years. The coupling of plasmonic nanostructures with the nanolayers of 2D materials enhances the optoelectronic properties even beyond the bandgap of the material and depends on the tuning of...

Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanorib...

Since the discovery of topological insulators (TI), there are considerable interests in demonstrating metallic surface states, their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstra...

Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanorib...

Metal nanoparticle semiconductor heterostructures exhibit unique optoelectronic properties and have potential applications in energy harvesting, photodetectors, photocatalysts, and optoelectronic devices. The hot carriers are formed at the metal nanostructure semiconductor interface, and their efficient injection into the surrounding media (semicon...

Since the discovery of topological insulators (TI), there are considerable interests in demonstrating metallic surface states, their shielded robust nature to the backscattering and study their properties at nanoscale dimensions by fabricating nanodevices. Here we address an important scientific issue related to TI whether one can clearly demonstra...

We report the use of random Au nanoislands to enhance the absorption of CdS photodetectors at wavelengths beyond its intrinsic absorption properties from visible to NIR spectrum enabling a high performance visible-NIR photodetector. The temperature dependent annealing method was employed to form random sized Au nanoparticles on CdS films. The hot e...

Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal fo...

Metal nanoparticle semiconductor heterostructures exhibit unique optoelectronic properties and have potential applications in energy harvesting, photodetectors, photocatalysts, and optoelectronic devices. The hot carriers are formed at the metal nanostructure semiconductor interface, and their efficient injection into the surrounding media (semicon...

CdS grown by chemical bath deposition (CBD) technique is very simple, robust, economical method and has potential large scale applications in solar cells, photovoltaic, photodetectors, sensors and optoelectronic devices. Here we report channel lengths (CLs) specific broadspectral photoresponse properties of commonly grown robust CdS films by CBD. T...