Alicia Gonzalo MartínUniversity Carlos III de Madrid | UC3M
Alicia Gonzalo Martín
Phd
Post doctoral research at Universidad Carlos III de Madrid
About
33
Publications
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Introduction
MBE growth of GaAs-based structures for solar cell aplications, developmment of rare earth-based mnanomaterial for Up-Conversion solar cell purposes.
First award of Research Margarita Salas 2020 granted by Madrid City Council.
Additional affiliations
April 2020 - present
January 2015 - March 2020
Publications
Publications (33)
The integration of nanostructures on top of solar cells has been previously demonstrated as an effective method to increase the collection efficiency by coupling to sunlight. In this work, this approach is implemented by using core-shell gallium nanoparticles (Ga-NPs) as functional light scatterers on III-V solar cells, investigating how the Ga-NPs...
Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid...
In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing (RTA) on the performance of ~1 eV GaAsSbN-based solar cells. Different configurations of the dilute nitride material are studied: a bulk quaternary GaAsSbN layer and type-II GaAsSb/GaAsN superlattices (SL) with different period thickness. The RTA treatment lea...
In this work, two different strategies to preserve InAs/GaAs QDs against decomposition during the capping process have been compared structurally and optically. They are based on: (i) the control of the growth parameters of the capping layer (CL), such as growth rate, and (ii) the nature of the CL, such as the use of GaAsSb strain-reducing layers (...
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the band gap and the creation of site controlled quantum dots through the manipulation of N−nH complexes, N−nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexe...
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes...
We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the lattice-matched 1.0–1.15 eV subcell that would allow the implementation of the optimum monolithic multi-junction solar cell design. The separation of Sb and N atoms during growth leads to an improved composition homogeneity and a lower defect density than in...
The implementation of GaAs0.8Sb0.2 as CL to obtain type-II strain-coupled InAs MQD structures has been examined and compared to similar structures without Sb or without strain coupling. First, it has been demonstrated that capping with GaAsSb prevents the formation of In-rich agglomerations that hampered the QD formation as it has been observed in...
The study explores phenomena that occur during the growth of multi-stacked quantum dots (MQD) InAs layers using thin GaAs spacers. An arrangement of plastically relaxed agglomerations that extend along the MQD structure with diameters of about 70–120 nm and separated every 200–400 nm are observed. These agglomerations hinder the regular development...
Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and-I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a significant external quantum efficiency (EQE), with respect to the GaAsSbN bulk layers. Despite the difficu...
The effect of Sb and N incorporation in the CLs of (un)coupled QDs were analysed by TEM. InAs coupled QDs with GaAs and GaAsSb CLs produced agglomerations with high densities of TDs due to a collapse of the structure degrading their optical properties. On the contrary, simultaneous incorporation of Sb and N lead to well aligned QDs. However, an inc...
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and of the spectral current flow enables the identification of different regimes for carrier...
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and of the spectral current flow enables the identification of different regimes for carrier...
The practical realization of epitaxial quantum dot (QD) nanocrystals led before long to impressive experimental advances in optoelectronic devices, as well as to the emergence of new technological fields. However, the necessary capping process is well-known to hinder a precise control of the QD morphology and therefore of the possible electronic st...
GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi–junction solar cells due to the bandgap tunability in the 1.0-1.15 eV range and the possibility to match the lattice constant to the GaAs substrates. Recently, the use of GaAsSb/GaAsN superlattices (SLs) has been shown as an effective way to enhance photovolt...
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and...
A procedure to quantitatively analyse the relationship between the wetting layer (WL) and the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the manuscript, it allows determining, not only the proportion of deposited InAs held in the WL, but also the average In content inside the QDs. First, the amount of InAs de...
The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga2O3 nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achieved by ion implantation followed by thermal annealing. Scanning electron microscopy (SEM) analysis has sh...
Dilute nitride III–V alloys have attracted a lot of attention in the last decade due to its wide tunability of both band gap and lattice constant that makes them a potential candidate in multi-junction solar cell technology. For certain, these alloys can be used to improve the conventional lattice matched three-junction solar cell by the replacemen...
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth...
Mn doped β-Ga2O3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300–1500 °C. The morphology of the resulting structures has been found to depend on this temperature, as observed in the images obtained with scanning electron microscopy. The structures gr...