Ali UzunGhent University | UGhent
Ali Uzun
About
12
Publications
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Introduction
Publications
Publications (12)
We integrate edge-emitting etched-facet InAs/GaAs quantum dot (QD) lasers to an AlGaN/GaN-on-sapphire waveguide platform via micro-transfer printing. The lasers are placed into a trench etched into the sapphire substrate so as to transversely align the waveguides. The AlGaN/GaN waveguide structure is designed to allow for tolerant alignment of the...
We present the current state of the art in micro-transfer printing for heterogeneously integrated silicon photonic integrated circuits. The versatility of the technology is highlighted, as is the way ahead to make this technology a key enabler for next-generation photonic systems-on-chip.
The intimate optical integration of functional photonic components with low loss waveguides are necessary to fully realize high performance and cost effective photonics integrated circuits (PICs). The components that provide optical gain, modulation and detection are often best provided with custom III-V (InP, GaAs) materials. Releasing coupons or...
O-band InAs/GaAs Quantum Dot edge-emitting lasers are integrated onto a number of waveguiding platforms using micro-transfer printing. These are deep recesses in 220 nm Si, 3 µm Si and 300 nm SiN waveguide circuits. The processing technology to achieve release and high-yield accurate transfer of laser coupons up to 2.4 mm long and < 5 µm thick onto...
We demonstrate the integration of long (2.4 mm) 1.3 µm etched facet quantum dot (QD) laser diodes into 7 µm deep recesses on an SOI wafer by micro transfer printing (µTP). Inverse tapered waveguide couplers were used to edge-couple the light from the QD laser to the 220 nm thick Si waveguide layer. Characterization exhibits that the QD lasers with...
Purpose
This study aims to investigate photosensing characteristics of SiC and GaN nanowire-based devices through exposure to UV light. The photocurrent transients have been modeled to determine rise and decay process time constants. The 1D-semiconductor nanowires can exhibit higher light sensitivity compared to bulk materials because of their lar...
Spatiotemporal soccer data enables in-depth analysis of a soccer game. However, the amount and the nature of the data makes it challenging for analysts to easily uncover insights from the data. In this article, we introduce an interactive visualization tool that uses novel data mining and machine learning methods to enable coaches and analysts to w...
We have investigated the channel length dependence of the key performance parameters, such as speed, responsivity, external quantum efficiency (EQE), and responsivity-bandwidth product, of the silicon carbide nanowire-based ultraviolet (UV) photodetector devices with different channel lengths ranging from 120 to 800 nm. The device with the shortest...
We report the important performance parameters of SiC-NWFET devices including on/off current ratio (Ion/Ioff), gating effect, transconductance (gm), and carrier mobility (μh). The channel length dependence of these key performance parameters of the SiC-NWFETs with varying channel lengths ranging from 120 nm to 1.5 μm has been demonstrated. The devi...
The emerging data explosion in sports field has created new opportunities to practice
data science and analytics for deeper and larger scale analysis of games. With
collaborating and competing 22 players on the field, soccer is often considered as a
complex system. More specifically, each game is usually modeled as a network with
players as nodes,...
Analysis and training system accommodating a processor unit which can access a recorded positions database comprising the movement data like movement type of the movements like pass, shot realized by the players in at least one sports competition, dominant factors which are effective in realization of the movements, and the result of the movement,...