Ali BaghizadehETH Zurich | ETH Zürich · ScopeM
Ali Baghizadeh
PhD
Looking for new opportunities to apply analytical skills, math and machine learning in technical and scientific problems
About
35
Publications
24,176
Reads
How we measure 'reads'
A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. Learn more
872
Citations
Introduction
Ali Baghizadeh worked in the Scientific Center for Optical and Electron Microscopy (ScopeM) at ETH, Zürich, and before that, at the CICECO - Centre for Research in Ceramics and Composite Materials, University of Aveiro, Portugal. Ali does research in Condensed Matter Physics and Materials Engineering. Their current project is epitaxial films of oxides, aberration corrected electron microscopy DFT calculation, and applications of machine learning in image and data analysis.
Additional affiliations
September 1996 - July 2000
October 2018 - December 2018
MESA+, University of Twente
Position
- Researcher
Description
- In-situ RHEED analysis and superlattice preparation using PLD of functional oxides.
Education
March 2011 - December 2015
University of Averio, CICECO(Institute of Matrials),
Field of study
- Materials Science and Engineering
September 2000 - December 2002
K.N.Toosi University of Technology and Van de Graaff Lab
Field of study
- Solid state physics
Publications
Publications (35)
Metamaterials, fabricated by assembling different compounds at the nanoscale, can have properties not found in naturally occurring materials, and therefore offer new avenues to develop novel devices. In the realm of spintronics, where the spin of the electrons is used to extend the capabilities of electronic devices, the quest for such new function...
In situ synthesized semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully imple...
The shape recovery ability of shape-memory alloys vanishes below a critical size (~50 nm), which prevents their practical applications at the nanoscale. In contrast, ferroic materials, even when scaled down to dimensions of a few nanometers, exhibit actuation strain through domain switching, though the generated strain is modest (~1%). Here, we dev...
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully imple...
The thermal carburization of MoO3 nanobelts (nb) and SiO2-supported MoO3 nanosheets under a 1 : 4 mixture of CH4 : H2 yields Mo2C-nb and Mo2C/SiO2. Following this process by in situ Mo K-edge X-ray absorption spectroscopy (XAS) reveals different carburization pathways for unsupported and supported MoO3. In particular, the carburization of α-MoO3-nb...
The thermal carburization of MoO3 nanobelts (nb) and SiO2-supported MoO3 nanosheets under a 1 : 4 mixture of CH4 : H2 yields Mo2C-nb and Mo2C/SiO2. Following this process by in situ Mo K-edge X-ray absorption spectroscopy (XAS) reveals different carburization pathways for unsupported and supported MoO3. In particular, the carburization of α-MoO3-nb...
Multiferroic materials demonstrating coexistence of magnetic and ferroelectric orders are promising candidates for magnetoelectric devices. While understanding the underlying mechanism of interplaying of ferroic properties is important, tailoring their properties to make them potential candidates for magnetoelectric devices is challenging. Here, th...
The fabrication of power semiconductor devices based on 4H-silicon carbide (SiC) typically includes doping by ion implantation and postimplantation annealing to activate the implanted dopants. The high-temperature annealing process can initiate various diffusion mechanisms that alter the initial implantation profile in terms of spatial distribution...
Research on topological defects in hexagonal manganites exposed uncovered properties of topologically protected domains and domain walls. Topological defects of h-REMnO3 oxides (RE=Lu-Dy and Sc, In) modify essential multiferroic properties. Despite wide research with single crystals of stoichiometric composition, for the case of polycrystalline cer...
We report on formation of epi-layer of SixGe1-x by taking standard procedure in CMOS technology. The competitive process of solid solubility of Ge dopant into Si and SiO2 is the key to engineer atomically sharp, low defect very thin epitaxial layer at the interface of oxide-Si. Oxidation time process was used to control the distribution of the dope...
The atomic nature of topologically protected ferroelectric (FE) walls in hexagonal ReMnO3 oxides (R: Sc, Y, Er, Ho, Yb, Lu) creates an interesting playground to study effects of defects on domain walls. The 6-fold FE vortices in this multiferroic family lose the ordering by the rule of 6 in the presence of partial edge dislocations (PED) besides it...
We report an effect of giant surface modification of a 5.6 nm thick BaTiO₃ film grown on Si (100) substrate under poling by conductive tip of a scanning probe microscope (SPM). The surface can be locally elevated by about 9 nm under -20 V applied during scanning, resulting in the maximum strain of 160%. The threshold voltage for the surface modific...
This study investigates the nanostructure of perovskite thin films, and its influence on magnetic properties. Epitaxial thin films of perovskite MnO3 with thickness ranging from nm to 320 nm were deposited on SrTiO3 (1 0 0) substrates using pulsed laser deposition techniques. X-ray diffraction, along with high-resolution transmission electron micro...
Self-doping of the h-LuMnxO3±δ (0.92 ≤ x ≤ 1.12) phase and changes in the sintering time are applied to investigate the formation and annihilation of antiphase ferroelectric (FE) domains in bulk ceramics. The increase in the annealing time in sintering results in growth of FE domains, which depends on the type of vacancy, 6-fold vortices with dimen...
Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrinsic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3 (LBM) thin-films and LBM/BaTiO3/ LBM (LBMBT) heterostructures were grown on single crystalline [100] silicon and [0001] Al2O3 using RF magnetron sput...
Alnico V thin film samples with the thickness of 100 nm were prepared by radio-frequency sputtering on Si substrates with and without a SiO2 layer. Heat treatment of the as-deposited thin films in above ambient pressure in an Ar atmosphere at a temperature range of 600–900°C, followed by quenching and/or slow cooling, leads to higher coercivity val...
A study on the underlying interaction mechanisms between lattice constants, magnetic and dielectric properties with inhomogeneities or internal interfaces in hexagonal, offstoichiometric LuMnO3 oxide is presented. By increasing Mn content the a-axis constant and volume of the unit cell, the antiferromagnetic (AFM) Néel temperature, TN, and frustrat...
Self-doped h-LuMnxO3±δ multiferroic ceramics with 0.92≤x≤1.12 were studied for the dependence of magnetic properties on x. Interlocking of lattice distortion at the nanoscale with ferroelectric (FE) domains in bulk RMnO3 materials is mostly unknown. Here we report occurrence of nano-domains in transmission electron microscopy (TEM) images with the...
Assessing Segregation Effects on Multiferroic Properties of Antiferromagnetic-Weak Ferromagnetic Coupled Systems by Analytical HRTEM - Volume 22 Issue S4 - J. M. Vieira, A. Baghizadeh, J. S. Amaral, J. N. Gonçalves, B. A. Almeida, M-G. Willinger, V. S. Amaral
We report polycrystalline BaTiO3 with cooperative magnetization behavior associated with the scarce presence of about 113 atomic ppm of Fe ions, clearly displaying magnetoelectric coupling with significant changes in magnetization (up toδM/M ≈32%) at the ferroelectric transitions. We find that Fe ions are segregated mostly at the interfaces between...
We model the ferroelectric and paraelectric phases in the YMnO3 and YMn2O5, compounds with discussion of the hyperfine parameters at the atomic nuclei: electric field gradient and magnetic hyperfine field, using first-principles density functional theory FP-L/APW+lo method (WIEN2K code). The differences of the changes in hyperfine properties and th...
High Vacuum thermal evaporation was used to grow germanium islands on the silicon
substrate covered by silicon oxide. The Ge nano-islands were formed by thermal annealing
at different temperatures from 500 °C to 700 °C. Formation of
islands was studied by various analytical techniques. The thickness of Ge layer was
determined by rutherford backscat...
In this study, we propose new approach to study on hydrogen implantation
into SiC crystalline structure and its effect on thermal oxidation.
This paper has investigated on effects of hydrogen implantation into the
surface structure of 6H-SiC crystal before and after thermal oxidation in
oxygen ambient. H ions were implanted in SiC with dose of...
One of the most popular techniques to fabricate low-loss optical waveguides is the use of zinc (Zn) ions by thermally diffusing them into lithium niobate (LN) crystal. Along this line the fabrication procedure involving lower temperatures and shorter times of diffusion would be more desirable. To this end we report a new procedure using advantages...
Segregation of implanted As during steam oxidation of Si wafers is shown to result in a highly enriched, thin layer of As at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase by as much as a factor of ∼2 depending on the depth distribution and fluence of the implanted As impurity. The thin As laye...
Cu@Cu2O core-shell nanoparticles on the a-C:H thin films are prepared by co-deposition of RF-Sputtering and RF-PECVD. The samples with different Cu concentration and Cu nanoparticle with different size are grown. X-ray photoelectron spectroscopy (XPS) characterization indicates that the surface of the Cu nanoparticles oxidizes when they are exposed...
In this paper the temperature effect on the growth mechanism of ZnS thin films prepared in a chemical bath containing zinc acetate, ethylenediamine, and thioacetamide aqueous solutions has been studied in the temperature range between 25 and 75 °C. These ZnS thin films possess a nanocrystalline structure, exhibit quantum size effects due to the sma...
Thirteen historical Iranian manuscripts belonging to the Qajar dynasty (18th–19th Century BC) were investigated by micro-PIXE
technique using Van de Graaff accelerator in the Nuclear Science & Technology Research Institute in Iran.
The aim of the present work has mainly been to determine the elemental composition of different inks and papers. In a...
1. Abstract The specific aspects of Ion Beam Analysis (IBA) for near surface and thin film characterization are discussed. The application of IBA techniques in material science, surface physics, thin film deposition and crystal growth has been investigated. In this paper, we report some new obtained results in Van De Graaff Laboratory on the differ...
Questions
Questions (11)
Hi Everyone
I have two sets of samples of tetragonal BaTiO3, epitaxial films and single crystal. In STEM images, I can calculate the displacmeent of the Ti ions with respect to Ba cage. I am a bit confused with the possible dirfections that Ti ions might have. I assume the displacement should be along c axis, and a, which this later one is equivalent to b. It means that in my atomic resolution STEM images, I might expect 6 directions (+/-). Am I right? Can someone please correct me?
Thanks in advance.
Dear Fellows
I need to measure the magnetic field of the objective lens in TEM (less than 1 T), and I do not have holder with Hall sensor. I was thinking to buy mini Hall sensor and mount it on biasing holder where I have four contacts. Is there any experience or suggestion on choosing proper Hall sensor? I would appreciate your comments.
Best regards
Hi Everyone
I am looking for a scientific text/paper to explain briefly the physics and mathematics behind Cs-corrector in TEM and STEM.
Thanks
Ali
Hey Everyone
I am wondering to know for a deposited film highly oriented let´s say along c-axis in hexagonal structure on sapphire (001), how much will be misleading our interpretation on the growth orientation on using XRD Powder machine (only spinning on sample no other movement) (theta-2theta scan), if one compares it to the same scan in a XRD machine with possibility of different rotations and sample alignment. I am using 2 different XRD powder machines, for one film I do not see the same peaks.
Thank you and regards
Dear Colleagues
Does anyone know a journal with reference citation style of oxford, where citation appears in each page as a footnote? I need to use it in Mendeley. Thanks for any comment.
Regards
Dear Colleagues
Does anyone knows about the conductivity of YSZ commercial single crystal substrates. I need to deposit my insulating oxide layer on YSZ (111) single crystal, and then measure its electrical polarization. Do I need a buffer electrode or not? Any experience please let me know. Regards. Ali
Dear Colleagues
I need a sapphire substrate (0001) coated with 20-30 nm thin platinum (111) layer for my film deposition. I couldn´t find any supplier for this substrate. Any idea where I may find it, or if I can easily do it using RF-sputtering.
Looking for any suggestion. Thanks.