Alhan Farhanah Abd Rahim

Alhan Farhanah Abd Rahim
Universiti Teknologi MARA | UiTM · Faculty of Electrical Engineering

About

45
Publications
6,887
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120
Citations
Citations since 2016
30 Research Items
90 Citations
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201620172018201920202021202205101520
201620172018201920202021202205101520

Publications

Publications (45)
Article
Cyclic voltammetry electrochemical biosensors reported a wide usage and applications for its fast response, able to be miniaturized and its sensitivity. However, the bulky, expensive and laboratory-based readout circuitry made it impossible to be used in the field-based environment. A miniaturized and portable readout circuitry for the DNA detectio...
Article
Recently, burglary and robbery cases has been increasing and one of the factors that contributes to the growth of these cases is the weakness on the old-style home security system. The old-fashioned key and lock system may bring challenges to the effectiveness of the system since the keys are exposed to the risks of being lost and duplicated. The a...
Article
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span>This work presents a design and development of a remote controller application using an Altera DE2-115 board. A remote controller lighting provides smart technologies make it viable to monitor, control and support users in which can enhance the quality life and promote independent living. Nowadays, to turn on the electrical devices, a user wil...
Article
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Horizontal Axis Wind Turbine (HAWT) had been widely used in Malaysia, however, research concluded that the power produced is still low which approximately 0.02% from the wind turbine input is. The average wind speed in Penang, Malaysia, is recorded between 1.0 m/s to 2.5 m/s whereby to produce 2.7 kW of power by HAWT, 12.0 m/s of average wind speed...
Article
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Despite abundant growth in automatic emotion recognition system (ERS) studies using various techniques in feature extractions and classifiers, scarce sources found to improve the system via pre-processing techniques. This paper proposed a smart pre-processing stage using fuzzy logic inference system (FIS) based on Mamdani engine and simple time-bas...
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Silicon, glass and ceramic are commonly base substrate used in DNA biosensor fabrication due to its biocompatible, expensive, hard and brittle. However due to the difficulty for drilling and dicing, these materials required expensive equipments and complex methodology of fabrication. Large gap of thermal expansion coefficient (TEC) between silicon/...
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The Development of a wearable sensor that can monitor a heart rate and body temperature based on ESP8266 NodeMCU microcontroller is proposed in this project. To realize the system, two biomedical sensors are used which are MAX30205 and SEN11574 Pulse Rate Sensor. The sensors should be wearable to make it easy to be used by the patient. All the data...
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In this project, an investigation on the effect of difference shapes of the top surface silicon (Si) solar cell as an antireflective (AR) layer was carried out. Texturing the top surface of silicon solar cell helps to reduce light reflection from the solar cell. The different surface texturing which is planar structure, columnar structure and pyram...
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Glass fabricated with Ti/Au is a common technique for DNA in biosensor application. However, the wet etching technique produced poor adhesion for the Ti/Au on the glass. FR4 had been investigated to be used as a based material in this research. Three types of thermal evaporated methods for metal fabrication are investigated; Ti/Au, oxidized Cu/Au,...
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A set of n-type and p-type porous silicon (PS) layers were fabricated by photoelectrochemical etching using direct current (DC) and pulse current (PC) techniques. The study aims to compare the effect of different wafer type on the formation of the PS structure. The samples were etched in a solution of HF:C 2 H 6 O with a composition ratio of 1:4. A...
Article
The fabrication of porous GaN (PGaN) by UV-assisted electrochemical etching with a variations of current densities (40, 60, and 80 mA/cm ² ) for 60 min in electrolytes consisting of 4% KOH are reported. Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-Ray (EDX), Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) were...
Article
A set of n-type porous silicon (PS) layers were fabricated by photoelectrochemical etching using direct current (DC) and pulse current (PC) techniques. The study aims to compare the effect of different resistivity (5 Ω and 10 Ω) on the formation of the PS structure. The samples were etched in a solution of HF:C 2 H 6 O with a composition ratio of 1...
Article
Purpose Porous silicon (PS) was successfully fabricated using an alternating current photo-assisted electrochemical etching (ACPEC) technique. This study aims to compare the effect of different crystal orientation of Si n (100) and n (111) on the structural and optical characteristics of the PS. Design/methodology/approach PS was fabricated using...
Article
Full-text available
The objective of this study is to investigate the potential material, PDMS as a flexible antenna substrate for body centric wireless application. A stretchable and flexible antenna design fabricated with thin copper as the radiating element and using the polydimethylsiloxane as the substrate is presented. Thin copper sheet based conductor has been...
Conference Paper
In this study, the characterization of porous Gallium Nitrate (PG) for potential Ultra-violet (UV) light emission was examined by simulation. The simulation was carried out using SILVACO TCAD tools to fabricate the PG. By using DevEdit, the structure was constructed, and the device simulation was carried out using ATLAS provided by the SILVACO TCAD...
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This paper presents the design and development of a programmable gate array (FPGA) switching strategy was chosen and pre for the power switches in the 5-level The designed switching controller power switches of the 5-level TCHB multilevel inverter. The than 1% of the total FPGA logic elements (LEs), LEs. The execution speed of the 99.9% faster than...
Conference Paper
In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the sol...
Conference Paper
This project presents a new method to fabricate porous Si using two-step Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) technique. The n-type Si (111) was initially etched for a short time to form high density of etch pits and subsequently the sample was anodized in HF solution by using alternating current photo-assisted electro...
Conference Paper
Full-text available
P-type Porous silicon (PS) was sucessfully formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The PS was etched in the Hydrofluoric (HF) based solution at a current density of J = 10 mA/cm² for 30 minutes from a crystalline silicon wafer with (100) orientation. For the PC process, the curr...
Article
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In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation resul...
Chapter
This work aims to introduce an alternative method of obtaining porous density characteristics of porous silicon material by making use of images obtained from the Scanning Electron Microscope. The available and most commonly used method of obtaining the porous density characteristics of semiconductor materials is the gravimetric or quasi-gravimetri...
Article
Porous silicon (PS) was formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The study aims to compare the effect of crystal orientations (n-type (100) and n-type (111)) on the formation of the PS under various conditions. For DC etching technique, the silicon wafers were etched in Hydrofluo...
Article
The formation of nanocrystalline porous silicon (PS) was successfully prepared under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching condition of an n-type (100) silicon (Si) substrate under the illumination of an incandescent white light. As grown Si and PS through conventional direct current(DC)...
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Porous silicon (PS) was successfully synthesized via novel integrated pulsed electrochemical etching of an n-type (100) silicon (Si) substrate under various condition. The PS was etched using hydrofluoric acid (HF) based solution and the porosity was optimized by introducing electroless chemical etching process prior to photo electrochemical (PEC)...
Article
In this work, the characterization of porous silicon (PS) for potential visible light emission was investigated by simulation. SILVACO TCAD simulator was used to simulate PS by using process simulator, ATHENA and device simulator, ATLAS. Different pore diameter sizes of the PS structures were constructed. The structural, optical and electrical char...
Article
Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000 °C at different deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio frequency magnetron sputtering technique. Scanning el...
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Germanium (Ge) nanocrystals were synthesized by rapid thermal processing (RTP) of radio frequency sputtered Ge on silicon (100) substrate. A Si capping layer of 185 nm thickness was deposited onto the 225 nm Ge layer. The layered samples subsequently underwent annealing during RTP at 900 �C for 30, 45, and 60 s to subsequently evolve into Ge island...
Article
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Germanium (Ge) nanostructures were fabricated through the rapid thermal processing of radio frequency sputtered Ge on silicon (Si). The substrates were unheated during the growth, resulting in a post-growth Ge deposited layer that was 250 nm thick with a surface that had no evidence of nanostructure formation. The samples subsequently underwent rap...
Article
In this paper we reported room temperature synthesis of embedded porous Si (PS) based structures using simple and low cost techniques of electrochemical etching and thermal evaporation. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF). The Ge and ZnO layers were deposited onto the PS by conventional thermal evaporation....
Conference Paper
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The gallium nitride (GaN) pn-junctions was grown on silicon (111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) on top of a AlN buffer in order to reduce the strain of the alloy. For GaN pn-junction layers, silicon and magnesium were used as n and p dopants, respectively. The SEM images show a high quality hetero-interface without cr...
Conference Paper
Observation of visible luminescence in porous silicon(PS) by Canham in 1990[1] seemed to solve the physical inability of silicon to act as light emitter. PS has unique properties such as direct and wide modulated energy bandgap, high resistivity, vast surface area-to-volume ratio and the same single-crystal structure as bulk Si. These characteristi...
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In this work, we use a simple and cost effective technique of sputtering followed by the rapid thermal processing at 900 • C for 30 s to form Ge nanostructures on the Si(100) substrate. A layer of Ge (300 nm) and Si cap layer (100 nm) were deposited using RF magnetron sputtering. Two samples were prepared: Ge layer with Si capping (Si/Ge/Si) and Ge...
Article
In this work we use a very low cost and conventional technique to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF). The Ge layer was then deposited onto the PS by thermal evaporation. A Si capping layer...
Article
Full-text available
In this work, the nanocrystalline porous silicon (PS) is prepared through the simple electrochemical etching of n-type Si (100) under the illumination of a 100W incandescent white light. SEM, AFM, Raman and PL have been used to characterize the morphological and optical properties of the PS. SEM shows uniformed circular pores with estimated sizes,...
Article
Full-text available
In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by therma...
Article
Purpose – The purpose of this paper is to describe a very low-cost way to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using a conventional and cost effective technique in which thermal evaporator with PS acts as patterned substrate. Also, the potential metal-semiconductor-metal (MSM) photodetector IV...
Article
In this work, the modeling strategy of 32 V asymmetric High Voltage MOSFETs fabricated in 180 nm High Voltage CMOS process technology using Aurora and Hspice level 66 is presented. The model is validated on the measured characteristics of asymmetric HV MOSFET and implemented on commercial circuit simulator HSPICE. The model shows excellent DC IV ch...
Conference Paper
High voltage (HV) MOSFETs are extremely interesting for automotive, medical ultra-sound, flat panel LCD displays, RF and many other applications. One of the key phenomena related to the operation of HV devices is the self heating effect (SHE). Intuitively SHE represents the heating of the device due to its internal power dissipation. SHE results in...
Conference Paper
A material system that appears to have a tremendous advantage and compatible with Si technology is the Si-SiGe system. One problem in npn SiGe HBT is boron out-diffusion from the base. Boron dopant that out-diffuses into the emitter and collector during SiGe growth and subsequent heat treatment results in the formation of parasitic energy barriers...

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