Alexander Efremov

• Ivanovo State University of Chemistry and Technology

A comparative study of the effect of small (up to 20%) substituting additives F2, H2, and HF on the kinetics and stationary concentrations of neutral particles in 50% CF4 + 50% Ar plasma under the typical conditions of reactive ion etching (RIE) of silicon and its compounds is carried out. It is shown that the vari-ation of the CF4/F2 and CF4/H2 ra...

A comparative study of the electrophysical parameters of the plasma, the fluorine atom concentra-tions, and the kinetics of reactive-ion etching of silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 mixtures of a variable (0–75% O2) initial composition is carried out. It is shown that the dominant etching mecha-nism is always the ion-stimulated chemical...

The parameters of the gas phase and the kinetics of reactive ion etching of SiO2 and Si3N4 under conditions of an induction RF (13.56 MHz) discharge with a varying HBr/Cl2 ratio is studied. The study includes plasma diagnostics using Langmuir probes, plasma modeling to find stationary concentrations of active particles, measuring velocities, and an...

We carry out a comparative study of the kinetics of plasma-chemical processes and plasma composition in CHF3 + Ar and C4F8 + Ar mixtures under the conditions of a high-frequency (13.56 MHz) induction discharge. Using diagnostic methods and plasma modeling, the general features and differences of the plasma’s electrophysical parameters in the studie...

Etching mechanisms of SiC thin films in CF4/CH2F2/N2/Ar inductively coupled plasmas were studied based on the correlations between measured SiC etching rates and model-predicted fluxes of plasma active species. Plasma chemistry was analyzed using Langmuir probe diagnostics, optical emission spectroscopy and 0-dimensional (global) plasma modeling. I...

The effects of both CF4/O2 and O2/Ar mixing ratios in three-component CF4/O2/Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF4 for...

The comparative study of etching characteristics and mechanisms for TiO2 thin films in CF4 + Ar, Cl2 + Ar and HBr + Ar inductively coupled plasmas was carried out. The etching rates for TiO2, Si and photoresist were measured as functions of gas mixing ratios at fixed gas pressure (10 mTorr), input power (800 W) and bias power (300 W). It was found...

In this work, we studied the influence of O2/Ar mixing ratio on the etching characteristics of carbon nanotube (CNT) thin films in inductively coupled plasma at constant gas pressure (6 mTorr), input power (400 W), bias power (50 W), and total gas flow rate (40 sccm). The etching mechanism was analyzed based on both plasma diagnostics (optical emis...

This study investigated the etching characteristics and mechanisms of SiC, Si, and SiO2 in CF4/CH2F2/N2/Ar inductively-coupled plasmas. The investigation showed that a change in the CF4/CH2F2 mixing ratio at fixed N2 and Ar fractions in a feed gas causes a decrease in the etching rates of SiC and Si, but results in an almost constant SiO2 etching r...

The kinetics of the creation and annihilation of neutral particles in HCl and HBr plasmas under the conditions of standard industrial etching reactors is simulated. It is established that the two systems have similar kinetic schemes and exhibit only quantitative differences in plasma compositions. It is show that the HBr plasma is characterized by...

The bio-immobilization efficiency of single-walled carbon nanotube (SWCNT) thin films treated in NH3/Ar/N2 inductively coupled plasmas with different Ar/N2 gas mixing ratios was studied. The plasma parameters as well as the densities and fluxes of the plasma active species were controlled using both plasma diagnostics (Langmuir probes, optical emis...

The kinetics of the deposition of polymer films in methane plasma and the kinetics of their plasma destruction in argon and oxygen has been investigated experimentally. It has been shown that, in the studied range of conditions, both processes are stationary and proceed in the kinetic mode; moreover, the dependences of the deposition rate on the ex...

The possibility of plasma chemical conversion of hydrogen chloride was explored. It was shown that, for the typical conditions of atmospheric pressure discharges, the use of pure HCl as the plasma-forming gas does not provide the conversion degrees higher than 4%. It was found that high (>95%) HCl conversion degrees, as well as maximum yields of Cl...

The investigation of C4F8+O2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O2 mixing ratio results in monotonically decreasing densities of CFx (x = 1–3) radicals as well as...

An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0–50% at a cons...

A comparative study of the effect of the initial composition of the HCl + Ar, H2, O2, and Cl2 binary mixtures on the steady-state physical parameters and composition of direct-current glow-discharge plasma was carried out. Information on the reduced electric field intensity, average energy and concentration of electrons, concentrations and densitie...

The comparative study of HCl and HBr plasma chemistries was carried out using plasma modeling. It was found that both gas systems are characterized by similar reaction schemes and exhibit only the quantitative differences in kinetics of both neutral and charged species. For one and the same ranges of electron temperature and electron density, the i...

The heterogeneous decay kinetics of chlorine and hydrogen atoms in plasmas of HCl mixtures with Ar, H2, O2, and Cl2 of variable initial composition have been studied using optical and spectral diagnostics methods and plasma simulation. It has been shown that the assumption about the constant recombination probability is inconsistent with the behavi...

The authors investigated the etching characteristics and mechanisms of (In, Ga, Zn)O (IGZO) thin films in CF4/Ar/O2 inductively coupled plasmas. The etching rates of IGZO as well as the IGZO/SiO2 and IGZO/Al2O3 etching selectivities were measured as functions of O2 content in a feed gas (0%-50%) and gas pressure ( p = 4-10 mTorr) at fixed input pow...

The effect of the O2/Ar mixing ratio in CF4/O2/Ar and C4F8/O2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was fou...

The stationary parameters and composition of DC glow discharge plasma (p = 40-200 Pa, i = 30-70 mA) in CH4-Ar mixtures of different compositions have been studied by probe diagnostics and mathematical simulation. Data on the influence of the initial composition of the plasma-forming mixture on the reduced electric field strength, energy electron di...

Etching characteristics and mechanisms of low-temperature SiN x thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN x thin films as well as the etching selectivities over Si and photoresist were measured in the range of 25–75% O2 in a feed gas at fixed CH2F2 content (25%), gas pressure (6 mT...

The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0–50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTor...

A study of kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CCl2F2 is carried out. It is confirmed that the main chemically active particles providing the etching of GaAs are the chlorine atoms. It is shown that the character of kinetic curves and the form of dependences of the etching rate on gas p...

The etching characteristics and mechanism of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas under the same operating conditions (pressure, 6 mTorr; input power, 700 W; bias power, 200 W) were investigated. For both gas mixtures, an increase in the Ar fraction or gas pressure at a fixed gas mixing ratio was found to cause a non-monot...

We have investigated the stationary parameters and the composition of the DC glow discharge plasma (p = 40–200 Pa, i = 30–70 mA) in methane by means of the probe technique and numerical simulation. We have obtained data on the reduced strength of the electric field, on the rate constants of the processes under electron impact, and on the stationary...

An investigation of etching mechanism of low-temperature SiO2 thin films in CF4/Ar/O2 inductively coupled plasmas at constant input power (900 W) and bias power (200 W) was carried out. It was found that that the variations of Ar/O2 mixing ratio (0–50 %) at constant 50 % CF4 fraction as well as the change in gas pressure (4–10 mTorr) resulted in no...

The steady-state parameters and the composition of the dc glow discharge plasma (p = 40–200 Pa, i = 30–70 mA) in methane are investigated by the probe diagnostics and mathematical modeling when solving the Boltzmann kinetic equation. The data on the reduced electric field strength, the electron energy distributions, the rate constants of the proces...

The investigations of stainless steel (SS) etching behavior in the Cl2/Ar inductively coupled plasma as well as the etched surface characteristics were carried out. It was found that an increase in Ar fraction in the Cl2/Ar plasma from 0 to 100% at fixed gas pressure, input power and bias power results in decreasing both etching (degradation) rate...

The plasma parameters and mechanisms of gallium arsenide (GaAs) reactive plasma etching in HCl-Ar and HCl-Cl2 mixtures under constant-current glow discharge conditions were investigated. The mathematical simulation of plasma helped to establish that the dilution of HCl with argon or chlorine results in opposite changes in the flux densities of chlo...

The zeolite A was synthesized from the mechanically activated solid mixtures of metakaolin, sodium hydroxide and aluminum oxide. The stages of both thermal treatment and hydrothermal crystallization were investigated and optimized. The size of zeolite A particle was directly measured by scanning electron microscopy as well as calculated using the X...

An investigation of etching behaviors for Mo and Al2O3 thin films in O2/Cl2/Ar inductively coupled plasmas at constant gas pressure (6 mTorr), input power (700 W) and bias power (200 W) was carried out. It was found that an increase in Ar mixing ratio for Cl2/Ar plasma results in non-monotonic etching rates with the maximums of 160 nm/min at 60 % A...

The mechanisms of the influence of the initial composition of an HCl-Ar mixture on the kinetics and concentration of chlorine atoms in direct-current glow discharge plasma have been studied. It has been found that an increase in the Ar content at a constant total gas pressure leads to an increase in the degree of dissociation of HCl due to an incre...

By means of mathematical modeling, data are obtained on the electron gas energy distribution function, the formation rates, and the concentrations of the neutral and the charged particles in a DC glow discharge plasma (p = 40–200 Pa, i p = 15–35 mA) depending on the HCl-N2 mixture composition. It is shown that a dilution of HCl by nitrogen is accom...

The direct current (dc) glow discharge plasma parameters and active species kinetics in HCl-X (X = Ar, N2, H2, Cl2, O2) mixtures were studied using both plasma diagnostics Langmuir probes and modeling. The 0-dimensional self-consistent steady-state model included the simultaneous solution of Boltzmann kinetic equation, the equations of chemical kin...

The influence of the initial HCl-Cl2 mixture composition on stationary parameters and the composition of the DC glow discharge plasma (p = 40–200 Pa, i p = 15–35 mA) is investigated. Calculated data on the energy distributions of electrons, the integral characteristics of the electron gas, and the plasma composition are obtained. The character of t...

The TiO2 etching characteristics and mechanisms in HBr/Ar and Cl2/Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias power conditions. It was found that in both systems, an increase in gas pressure from 4 to 10 mTorr results in a non-monotonic TiO2 etching rate, while a variation of input power in the range 500–8...

The TiO 2 etching characteristics and mechanism in HBr/Cl2/Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found that the TiO 2 etching rate in Cl2/Ar plasma is about 8 times faster than that in HBr/Ar plasma. In both HBr-rich (60% HBr + 20% Cl2 + 20% Ar) and Cl2-rich (20% HBr + 60% Cl2 + 20% Ar) plasmas,...

The TiO2 etching characteristics and mechanism in HBr/Cl2/Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found that the TiO2 etching rate in Cl2/Ar plasma is about 8 times faster than that in HBr/Ar plasma. In both HBr-rich (60% HBr + 20% Cl2 + 20% Ar) and Cl2-rich (20% HBr + 60% Cl2 + 20% Ar) plasmas, an...

The kinetic features of polymer film deposition under dc glow-discharge conditions in a methane atmosphere have been studied over the pressure range of 40–120 Pa at a discharge current of 30–70 mA. The optical properties, chemical structure, and topology of the films have been examined by UV spectroscopy, IR spectroscopy, and atomic-force microscop...

The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl3/Cl2/Ar inductively coupled plasma at a fixed gas pressure (6 mTorr) were investigated. It was found that the substitution of Cl2 for BCl3 in the BCl3/Cl2/Ar gas mixture results in the maximum IGZO etching rate in 40% BCl3 + 40% Cl2 + 20% Ar. In both Cl2-rich...

The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl3/Cl2/Ar inductively coupled plasma at a fixed gas pressure (6 mTorr) were investigated. It was found that the substitution of Cl2 for BCl3 in the BCl3/Cl2/Ar gas mixture results in the maximum IGZO etching rate in 40% BCl3 + 40% Cl2 + 20% Ar. In both Cl2-rich...

LTA zeolite can be prepared from dry mixes in a vibratory mill with an impact-shear loading conditions. For the synthesis of LTA zeolite, it is necessary to use the anhydrous ingredients (Al2Si2O7-metakaolin, gamma-Al2O3). The process of synthesis is controlled by X-ray diffraction, IR-spectroscopy, and atomic-force microscopy. The presence of stru...

The influence of the initial HCl-Ar and HCl-He mixture composition on the DC glow discharge plasma at p = 40–200 Pa and i p = 15–35 mA is investigated. Model calculations are performed, and the electron distributions over energy, integral characteristics of the electron gas, and the charged particle concentrations are obtained. We show that the mai...

Chlorine-containing gases are widely used in etching series of materials. In this field, hydrogen chloride is one of the most promising plasma reagents. In this paper, emission spectroscopy techniques have been applied to study an etching of gallium arsenide in HCl plasma. The gas emission spectrum consists only of atomic components. The excitation...

The influence of the initial composition of an HCl-H2 mixture on the steady-state parameters and composition of a dc glow discharge plasma (p = 40–200 Pa, i p = 15–35 mA) is investigated. The calculated data on the electron energy distributions, integral characteristics of the electron gas, and plasma composition are gathered. It is shown that the...

Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N2, and HBr-O2 inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0–100% for Ar, N2, and O2 at a fixed gas pressure (6 mTorr), i...

Model investigations of the effect of the initial composition of a HBr/H2mixture on the stationary parameters of a dc glow discharge plasma (p = 30−250 Pa, i p = 20 mA) have been carried out. Calculation data on energy distributions of electrons, integral characteristics of the electron gas, and concentrations of neutral and charged particles have...

The effect of the composition of a mixture on the electrophysical parameters and emission spectra of HCl-O2 and HCl-Ar plasma was analyzed. Data on the gas temperature and reduced electric-field intensity are obtained. Based on an analysis of the emission spectra of plasma, the dilution of HCl with argon and oxygen is shown to result in the disprop...

An investigation of the etching characteristics of Pb(Zr,Ti)O3 (PZT), Pt, and SiO2 in an inductively coupled HBr/Cl2 plasma as functions of gas mixing ratio at constant total gas pressure (6 mTorr), gas flow rate (40 sccm), input power (700 W), and bias power (300 W) was carried out. It was found that the PZT etching rate exhibits a maximum of 23.8...

An investigation of the etching characteristics of Pb(Zr,Ti)O3 (PZT), Pt, and SiO2 in an inductively coupled HBr/Cl2 plasma as functions of gas mixing ratio at constant total gas pressure (6 mTorr), gas flow rate (40 sccm), input power (700 W), and bias power (300 W) was carried out. It was found that the PZT etching rate exhibits a maximum of 23.8...

The effects of HBr/Ar and HBr/Cl2 mixing ratios in the ranges of 0–100% Ar or Cl2 on plasma parameters, densities of active species influencing the dry etch mechanisms were analyzed at fixed total gas flow rate of 40 sccm, total gas pressure of 6mTorr, input power of 700W and bias power of 300W. The investigation combined plasma diagnostics by Lang...

We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga–ZnO) thin films in HBr/X (X = Ar, He, N2, O2) inductively-coupled plasmas. The etch rates of Ga–ZnO thin films were measured as a function of the additive gas fraction in the range of 0–100% for Ar, He, N2, and O2 at a fixed gas pressure (6 mTorr), input power (700 W), bias...

A model investigation of parameters and steady-state composition of the HBr plasma under conditions of a dc glow discharge (p = 30–250 Pa, i d = 10–30 mA) is performed. The calculated data by the composition of the neutral and ion components of the plasma are obtained. It is found that the balance of neutral particles is largely formed by radical...

The model investigation of the effect of the initial composition of the HBr/Ar and HBr/He mixtures on the steady-state parameters and composition of the glow discharge dc plasma (p = 30−250 Pa, i d = 20 mA) is performed. The calculated data on the energy distributions of electrons, integral characteristics of the electron gas, and concentrations of...

The etching characteristics and mechanisms of ZnO and Ga-doped ZnO (Ga-ZnO) thin films in a HBr/Ar/CHF3 inductively coupled plasma were investigated. The etching rate of ZnO was measured as a function of the CHF3 mixing ratio in the range of 0-15% in a HBr:Ar = 5:2 plasma at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), a...

This paper reports the results of a model-based analysis of the etch mechanism for the Y2O3 thin films in the Cl2/Ar and BCl3/Ar inductively coupled plasma. It was found that the BCl3/Ar plasma provides higher etch rate (except the case of pure BCl3 and Cl2 gases) as well as shows the non-monotonic dependence of the etch rate on the Ar mixing ratio...

An investigation of the etching characteristics of Pb(Zr,Ti)O3 (PZT), Pt, SiO2 and Si3N4 in an inductively coupled HBr/Ar plasma as functions of gas mixing ratio at a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (700 W) and bias power (300 W) was carried out. It was found that the PZT etching rate exhibits a maximum a...

A comparative analysis of the parameters of HCl and HBr plasmas was performed by means of mathematical simulation, solving the Boltzmann kinetic equation in the one-component approximation. The specifics of the kinetics of the electron impact-induced processes and the composition of plasma charged species were analyzed.

An investigation of the etching characteristics and mechanisms of both In2O3 and SnO2 in a HBr/Ar inductively coupled plasma was carried out. The etching rates were measured in the range of 0-100% Ar and 100-300 W bias power at a fixed gas flow rate (40 sccm), total gas pressure (6 mTorr), and input power (700 W). The plasma parameters and composit...

The investigations of etch characteristics and mechanisms for both In2O3 and SnO2 thin films in the HBr-based inductively coupled plasmas were carried out. The etch rates were measured as functions of gas mixing ratio (0%–100% Ar), input power (400–700 W), and gas pressure (4–10 mTorr) at fixed bias power (200 W) and gas flow rate [40 SCCM (SCCM de...

This work discusses the effect of gas mixing ratio on the HBr/X (X=Ar, He, or N-2) plasma parameters, steady-state densities, and fluxes of active species in the planar inductively coupled plasma reactor. The investigation combined plasma diagnostics by Langmuir probes and a global (zero-dimensional) plasma model with Maxwellian approximation for t...

The investigations of etch characteristics and mechanisms for indium tin oxide (In2O3)0.9:(SnO2)0.1 (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%–100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters...

The study of the direct current (dc) glow discharge plasma parameters and active species kinetics in HBr (p=30-250 Pa, id=10-30 mA) was carried out using the 0-dimensional self-consistent steady-state model. The model included the Boltzmann kinetic equation, the balance equations for both neutral and charge particles, plasma conductivity equation a...

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and inpu...

The parameters and steady state composition of HCl plasma are investigated under dc glow discharge conditions (p = 30–250 Pa and i p = 10–30 mA)). The simulation of plasma has shown that the balance of neutral particles is largely determined by radical-chain processes. It is shown that dissociative attachment of electrons to HClV > 0 does not have...

The etching characteristics and mechanisms of ZnO thin films in an HBr/Ar inductively coupled plasma were investigated. The etch rate of ZnO was measured as a function of the HBr/Ar mixing ratio in the range of 0–100% Ar at a fixed gas pressure (6 mTorr), input power (900 W) and bias power (200 W). The plasma diagnostics were performed by double La...

An investigation of a VO2 etch mechanism in Cl-2/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO2 etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that t...

The analysis of the ZrO{sub 2} thin film etch mechanism in the Cl{sub 2}/Ar, Cl{sub 2}/He, and Cl{sub 2}/N{sub 2} inductively coupled plasmas was carried out. It was found that an increase in additive gas fraction at fixed gas pressure and input power results in increasing ZrO{sub 2} etch rate, which changes from 1.2 nm/min for pure Cl{sub 2} plasm...

The analysis of the Er-doped silica glass films (62%SiO2–30%B2O3–8%P2O5 + 0.2 wt%. Er2O3) etch mechanism in the CF4/O2 inductively coupled plasma was carried out using the combination of simplified models for plasma chemistry and etch kinetics. As the O2 mixing ratio in the CF4/O2 plasma increases from 0% to 30%, the etch rate decreases monotonical...

An investigation of ZrO2 etch behavior and mechanisms in a BCl3/O2 inductively coupled plasma was carried out. An increase in the O2 mixing ratio of up to 20 % was found to accelerate the ZrO2 etch rate, but to lower the ZrO2/SiO2 and the ZrO2/Si etch selectivities. Langmuir probe diagnostics was used to determine the effect of oxygen addition on t...

An investigation is performed of the effect of the initial composition of Cl2/N2 mixture on the electrophysical and kinetic parameters of plasma of a dc glow discharge. It is found that the dilution of chlorine with nitrogen causes a variation of the electron energy distribution function (EEDF), which is accompanied by an increase in the average el...

Investigations of InP etch characteristics and mechanisms in HBr/Ar inductively coupled plasma were carried out. The etch rates of InP and the photoresist were measured as functions of HBr/Ar mixing ratio at fixed gas pressure (5 mTorr), input power (800 W), and bias power (200 W). Langmuir probe diagnostics and zero-dimensional (global) plasma mod...

An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9–1.2nm/min for 0–100% Ar) while the Pt etch rate increases slightly from 17.4–23.0n...

The investigation of Al2O3 etch characteristics in the BCl3/Ar inductively coupled plasma was carried out in terms of effects of input process parameters (gas pressure, input power, bias power) on etch rate and etch selectivity over poly-Si and photoresist. It was found that, with the changes in gas pressure and input power, the Al2O3 etch rate fol...

The etching mechanism of thin films and etch selectivity over some materials in both /Ar and /Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In /Ar pla...

An investigation of the (BTO) thin-film etch characteristics and mechanism in the inductively coupled plasma was carried out. The BTO etch rate as well as the BTO/Pt etch selectivity were measured as functions of mixing ratio , gas pressure , input power , and bias power . A combination of plasma diagnostics by Langmuir probes and zer...

Systematic investigations are performed of the spectral characteristics of plasma of chlorine and its mixtures with oxygen, nitrogen, hydrogen, and argon in a dc glow discharge under conditions of continuous modulation of discharge current with rectangular pulses which provide for 100% modulation of discharge current (P total = 100 Pa, i d = 11 mA...

This article reports a study carried out on a model-based analysis of the etch mechanism for ZrO thin films in a BCl/He inductively coupled plasma. It was found that an increase in the He mixing ratio at a fixed gas pressure and input power results in an increase in the ZrO etch rate, which changes from 36 to 57 nm/min for 0-83% He. Langmuir probe...