Alessandro Paghi

Alessandro Paghi
  • Electronic Engineer
  • PostDoc Position at Italian National Research Council

Micro- and nano- structured materials, devices, and systems for DC-to-GHz superconducting electronics.

About

39
Publications
7,200
Reads
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395
Citations
Introduction
I received my M.Sc. and Ph.D. cum laude in Electronic and Information Engineering from the University of Pisa in 2018 and 2022, respectively. Currently, I am post-doctoral researcher at the Nanoscience Department of the Italian National Research Council focusing on the development of micro- and nano- structured materials, devices, and systems for unconventional DC-to-GHz electronics and UV-VIS-NIR photonics.
Current institution
Italian National Research Council
Current position
  • PostDoc Position
Additional affiliations
November 2018 - November 2021
University of Pisa
Position
  • PhD Student
Education
October 2016 - September 2018
University of Pisa
Field of study
  • Electronic Engineering
October 2013 - July 2016
University of Siena
Field of study
  • Information Engineering

Publications

Publications (39)
Preprint
Full-text available
The superconducting diode effect has garnered significant interest due to its prospective applications in cryogenic electronics and computing, characterized by zero resistance and no energy dissipation. This phenomenon has been demonstrated across various superconducting platforms, which typically necessitate unconventional materials with broken sp...
Article
Full-text available
Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated...
Article
Full-text available
Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very...
Preprint
Full-text available
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very...
Article
Full-text available
Back-action refers to a response that retro-acts on a system to tailor its properties with respect to an external stimulus. This effect is at the heart of many electronic devices such as amplifiers, oscillators, and sensors. Here, we demonstrate that back-action can be exploited to achieve non-reciprocal transport in superconducting circuits. In ou...
Preprint
InAs on Insulator (InAsOI) has recently been demonstrated as a promising platform to develop hybrid semiconducting-superconducting electronics, which features an InAs epilayer grown onto a cryogenic insulating InAlAs metamorphic buffer. The miniaturization of Si microchips has progressed significantly due to the integration of high permittivity (hi...
Article
Full-text available
Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra‐low power consumption solid‐state quantum electronics and exploring novel physical phenomena. Conventionally, 3D substrates, 2D quantum wells (QWs), and 1D nanowires (NWs) made of InAs are employed to create superconducting c...
Article
Full-text available
We are proposing, as an ideal candidate for caloritronic devices operating at subkelvin temperatures, a hybrid superconductor–semiconductor platform named InAs on insulator (InAsOI). This heterostructure is made by doped InAs grown on an insulating buffer of InAlAs on a GaAs substrate. Caloritronic devices aim to heat or cool electrons out of equil...
Preprint
Time Division Multiplexing (TDM) of cryogenic signal lines is a promising technique that can significantly reduce the required space, minimize the cooldown time, and increase the number of measurable quantum devices per cooldown. Here, we report the TDM of supercurrent with a 1-input-8-outputs voltage-actuated hybrid superconducting demultiplexer f...
Preprint
Dielectrics featuring a high relative permittivity, i.e., high-k dielectrics, have become the standard insulators in gate architectures, enhancing the electrical performance of both room temperature and cryogenic electronics. This study delves into the cryogenic (3 K) performance of high-k dielectrics commonly used as gate insulators. We fabricated...
Preprint
Full-text available
We are proposing a hybrid superconductor-semiconductor platform using indium arsenide (InAs) grown on an insulating layer of indium aluminum arsenide (InAlAs) heterostructure (InAsOI) as an ideal candidate for coherent caloritronic devices. These devices aim to heat or cool electrons out of equilibrium with respect to the phonon degree of freedom....
Article
Full-text available
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the m...
Article
Full-text available
Here, we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based supercon...
Article
Full-text available
InAs quantum wells (QWs) are promising material systems due to their small effective mass, narrow bandgap, strong spin–orbit coupling, large g-factor, and transparent interface to superconductors. Therefore, they are promising candidates for the implementation of topological superconducting states. Despite this potential, the growth of InAs QWs wit...
Article
Full-text available
Miniaturized solid state capacitors leveraging migration of unipolar ions in a single polyelectrolyte layer sandwiched between metal electrodes, namely, polyelectrolyte capacitors (PECs), have been recently reported with areal capacitance up to 100–200 nF mm⁻². Nonetheless, application of PECs in consumer and industrial electronics has been hindere...
Article
Ad-hoc interface PCBs (Printed Circuit Boards) are today the standard connection between cryogenic cabling and quantum chips. Besides low-loss and low-temperature-dependent-dielectric-permittivity materials, Flame Resistance n.4 (FR4) provides a low-cost solution for fabrication of cryogenic PCBs. Here, we report on an effective way to evaluate the...
Article
Full-text available
Herein, a miniaturized wireless sensing vaginal ring for the in situ continuous monitoring of vaginal pH and real‐time transmission of the pH data to a smartphone is reported, aimed at the diagnosis and management of bacterial vaginosis, a common condition frequently and adversely affecting women. The sensing vaginal ring consists of a bioresorbabl...
Article
Full-text available
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained una...
Article
Full-text available
Here, the authors report on the manufacturing and in vivo assessment of a bioresorbable nanostructured pH sensor. The sensor consists of a micrometer‐thick porous silica membrane conformably coated layer‐by‐layer with a nanometer‐thick multilayer stack of two polyelectrolytes labeled with a pH‐insensitive fluorophore. The sensor fluorescence change...
Article
Nanoparticle-polymer composites hold promise in enabling material functionalities that are difficult to achieve otherwise, yet are hampered to date by the scarce control and tunability of the nanoparticle collective properties on the polymer surface, especially for polymer foams featuring a complex three-dimensional pore network. Here we report on...
Article
Full-text available
Salivary analysis is gaining increasing interest as a novel and promising field of research for the diagnosis of neurodegenerative and demyelinating diseases related to aging. The collection of saliva offers several advantages, being noninvasive, stress-free, and repeatable. Moreover, the detection of biomarkers directly in saliva could allow an ea...
Article
Full-text available
Here the 4D printing of a magnifying polydimethylsiloxane (PDMS) lens encoded with a tunable plasmonic rejection filter is reported. The lens is formed by moldless printing of PDMS pre‐polymer on a nanostructured porous silicon (PSi) templating layer. A nanometer‐thick plasmonic filter is integrated on the lens surface by in situ synthesis of Ag an...
Article
Full-text available
Here, the formation of carbon nanotube (CNT)‐based nanohybrids in aqueous solution is reported, where DNA‐wrapped CNTs (DNA‐CNTs) act as templates for the growth of PbS and CdS nanocrystals, toward the formation of PbS‐DNA‐CNT and CdS‐DNA‐CNT heterostructures. Solution‐processed multiplexed photoresponsive devices are fabricated from these nanohybr...
Article
Over the past two decades, different nanomaterials have been proposed for the design of novel silicon-based electronic devices or to push the performance of existing ones, leveraging the unique properties of charge carriers traveling in meso-to-nano scale structures. Porous silicon (PSi) is the nano- (n-PSi) to micro- (m-Psi) structured form of sil...
Article
The increasing request of on-chip energy storage devices is driven by the augmented connectivity between people and things for IoT, portable, and wearable electronic applications. These systems require high performance components with low power consumption, compact size, and high energy storage capability. Supercapacitors (SCs) achieve capacitance...
Article
Full-text available
Here, a fluoride‐assisted route for the controlled in‐situ synthesis of metal nanoparticles (NPs) (i.e., AgNPs, AuNPs) on polydimethylsiloxane (PDMS) is reported. The size and coverage of the NPs on the PDMS surface are modulated with time and over space during the synthetic process, leveraging the improved yield (10×) and faster kinetics (100×) of...
Article
Full-text available
Nanomaterials hold the promise of revolutionizing electronics and, in turn, its applications, thanks to the unique properties of charge carriers traveling in structures with length scale down to a few nanometers. Here, the tremendous reduction of mobility and lifetime of charge carriers when traveling in randomly arranged nanostructured silicon cry...
Article
The currently growing request for a continuous connectivity between people and things has increased exponentially the demand for portable and/or wearable electronics. Thus, high performance components with more compact size, lower power consumption, and increased energy storage capability are needed. Although electronic active components have downs...
Article
Capacitors are the most critical passive components of future in-package and on-chip electronic systems with augmented energy-storage capabilities for consumer and wearable applications. Although an impressive increase of both capacitance and energy densities has been achieved over the last years for supercapacitors (SCs), electronic applications o...
Article
Gold nanoparticle layers (AuNPLs) enable the coupling of morphological, optical and electrical properties of AuNPs in liquid dispersion with tailored and specific surface topography, making them exploitable in many bio-applications (e.g. biosensing, drug delivery, photothermal therapy). Herein, we report the formation of AuNPLs on porous silicon (P...
Article
Herein, we report low concentration ethanol vapor detection with nanostructured porous silicon (PSi) interferometers using Interferogram Average over Wavelength Reflectance Spectroscopy (IAWRS), a novel interferometric technique recently developed for ultrasensitive (bio)sensing applications in liquid using miniaturized integrated interferometers....

Questions

Question (1)
Question
Hi everyone,
I am working with SU8 2075 and I found some issues with the edge reflow.
This is the experimental protocol:
- 3'' Si wafers were used as substrates. Wafers are cleaned using ACE (10 min), IPA (10 min) Piranha (H2SO4:H2O2 3:1) (30 min), dehydration (30 min@ 250 °C).
- A quantity of SU-8 2075 was casted on the middle of the wafer. I started trying 3.6 g (that is about 1.2 g x inch, as suggeste by the manual 1 mL x inch). I tryed also to reduce the quantity to 2.5 g or 2 g of resist. I tryed to cast the resist on the middle, or span the resist over the substrate using a syringe needle or tilting the wafer.
- Wafer was moved in the spin coater and different rotation speeds were tested for the coating. First step: 500 RPM @ 100 RPM/s for 15s
Second step: desidered RPM @ 300 RPM/s for 30 s
I tryied 1000, 1500, 2000, 2500, 3000 RPM for the second step.
- The bottom side of the wafer was cleaned from photoresist excess
- Wafer was positioned over a bubble-levelled hotplate. I tryed ramp the temperature from RT to 65 °C, wait the desidered time, the ramp to 65 °C to 95 °C, wait the disedered time, with ramp rate of 5°C/min. I also tryed to put the wafer directly on hot hotplate at 65 or 95 °C.
I found the following issues:
- If the resist was casted on the middle without span it over the surface, a sort of signature of the position of the resist after the drop casting step remain after the spin coating. Probably it is related to a sort of drying of the dropped resist surface I think...
- After the spin coating step, on the edge of the wafer there is an amount of resist: the edge beads. This edge is about 2-3 mm extension on the wafer. But, when the wafer was placed over the hotplate, the edge became larger and larger and increase with the temperature and time. This is the so-called reflow process.
When I use low spin coating speed (1000 RPM), the reflow allows the edge to reach the wafer center and planarize the wafer thickness all over the substrate.
On the other hand, when I use high spin coating speed (3000 RPM), the reflow is limited and the resist thickness is due to the photoresist spin and not from the edge reflow.
At middle spin coating speed (1500 - 2500 RPM), the reflow does not allow the edge to reach the wafer center and planarize the wafer thickness all over the substrate. As consequence, I obtain large edge (about 2 cm) and small working area on the center.
I am not sure, but I would to understand if the reflow is something wanted or unwanted using SU-8. If yes, how I can have it anytimes, also with middle spin coating speed. If not, how I can avoid it?

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