Alberto Almendra

Alberto Almendra
Universidad Politécnica de Madrid | UPM · Departmento de Ingeniería Electrónica

PhD

About

26
Publications
1,513
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96
Citations
Citations since 2017
0 Research Items
10 Citations
20172018201920202021202220230.00.51.01.52.02.53.0
20172018201920202021202220230.00.51.01.52.02.53.0
20172018201920202021202220230.00.51.01.52.02.53.0
20172018201920202021202220230.00.51.01.52.02.53.0
Introduction
Skills and Expertise
Additional affiliations
November 1991 - June 2015
Universidad Politécnica de Madrid
Position
  • Professor

Publications

Publications (26)
Article
Iridium silicides formation by rapid thermal annealing (RTA) under vacuum at several temperatures in the range of 350 to 650°C has been investigated. The substrates and the silicide films were analyzed by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). At 350°C, no distinguishable phase was detected for 240 secon...
Article
Iridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar...
Article
Full-text available
Avda. Complutense nº 30, 28040 Madrid (España) y J. Macías Guarasa Escuela Politécnica Superior. Universidad de Alcalá de Henares Alcalá de Henares (España) RESUMEN En este trabajo se describe la motivación, objetivo, planificación y desarrollo del Proyecto Mentor, un sistema de mentorías por compañeros en el que alumnos de últimos cursos (mentores...
Article
Full-text available
A summary of the activities done by the authors in order to evaluate the feasibility of the extension to de-localized teaching of experimental matters using the Internet is presented and discussed. We have considered a basic configuration: students that do their practical work at a remote bench authenticated by a laboratory server. The existence of...
Conference Paper
A set of software tools developed to facilitate the edition and presentation of the contents of experimental work is described. These tools are built to follow a learning method that uses a computer to guide and supervise the practical work in real time in a hardware laboratory. This method has been successfully applied for the last five years to a...
Article
The behaviour of Ir implanted into Si during subsequent thermal processing has been studied using ion beam analysis and transmission electron microscopy. Si(100) samples preamorphized by Si implantation and subsequently implanted with Ir were used. After regrowth of the amorphized substrate region at 550 °C, the samples were further annealed in vac...
Article
Full-text available
Si L2,3 soft-x-ray emission spectra of IrSi, Ir3Si5 and IrSi3 compounds have been taken and the valence band densities of states associated with them have been analysed as functions of the concentration of Si atoms, the coordination number of Si-Ir in the iridium silicide compounds and the average distances of the Si-Si bonds in those compounds. Th...
Article
The micro-Raman spectra of three iridium silicides, IrSi, IrSi1.75 and IrSi3, were obtained. The silicides were prepared by rapid thermal annealing of iridium films deposited on Si substrates. The three phases were identified by Rutherford backscattering spectrometry. The main bands observed in the micro-Raman spectra are described in order to prov...
Article
Full-text available
El objetivo de esta Tesis es caracterizar el crecimiento de los siliciuros de iridio en capa delgada obtenidos mediante procesamiento térmico rápido (RTP), con el fin de determinar los compuestos obtenidos y la cinética de crecimiento de los mismos. Aunque la utilización del RTP para la obtención de los siliciuros de iridio es un método pionero, a...
Article
A method based on the use of computers to guide and supervise the practical work performed by the students in a basic hardware laboratory is described. The bench computer adds real-time monitoring of the work done by the student, so that most mistakes, improper measurement settings, etc., are detected and immediately fed back. This environment rein...
Article
High energy resolved x-ray emission spectroscopy with variable electron beam excitation is applied for study of solid-phase reactions in the Ir/(lll)Si system as a function of annealing temperature. The formation of Lr silicides as a function of depth is studied by measurements of Si L-2,L-3 x-ray emission valence spectra at different electron exci...
Article
Quantitative analysis of the kinetics of growth of IrSi and IrSi1.75 by RTA in vacuum, taking into account that the formation of the two compounds proceeds simultaneously, are reported. The composition and thickness of the different silicides as a function of annealing temperature and time has been obtained by RBS measurements. We have used a multi...
Article
The growth kinetics of the iridium silicides, IrSi, IrSi1.75 and IrSi3, formed by RTA in vacuum has been characterized, by RBS, as a function of the annealing temperature and time for Ir films of different thicknesses. To ensure an accurate temperature measurement and control during the annealing, the sample temperature was calibrated by evaluating...
Article
The thermal evolution of Irp-SixGe1 − x interface reactions was investigated for the first time for the potential application in far infrared image sensors. A 20 nm iridium film was deposited in vacuum by electron beam evaporation onto p-Si0.75Ge0.25 fully relaxed MBE grown layers. Rapid thermal annealing in the temperature range of 500–1000°C have...
Article
Iridium silicide Schottky barrier diodes fabricated by low temperature rapid thermal annealing (R TA) either in vacuum or in an argon atmosphere are investigated. A comparison with furnace annealed diodes is made in terms of their electrical characteristics. An ideality index close to unity has been obtained. Measured values of Schottky barrier hei...
Article
The growth kinetics of the iridium silicides, IrSi and IrSi1.75 formed by RTA in vacuum has been characterized as a function of the processing temperature, up to 675°C, and annealing time for iridium films of different thickness. The sample temperature was measured using as a reference the SPE growth rate of amorphized silicon processed in the same...
Article
Iridium silicides formation by RTA in an Ar atmosphere or under vacuum has been studied for several temperatures in the range of 350–500°C. For the samples annealed in argon atmosphere, oxygen is incorporated during the RTA process, slowing down the reaction at the interface or even stopping it. In this case, no clear compound, Ir1Si1 or Ir1Si1.75,...
Article
Full-text available
In this paper, we describe an architecture that allows the integration of different devices in the home, such as appliances, security devices, etc. in the Internet. The local links between each device and a home server is achieved using Bluetooth technology. The server keeps a data base with the information of each device. In our proposed solution,...
Article
Full-text available
1. RESUMEN El reconocimiento de la orientación como un aspecto inherente a la calidad de la enseñanza universitaria ha sido reconocido por el propio Consejo de Universidades [1], aspecto que sigue siendo una asignatura pendiente de la misma [2], con muy pocas iniciativas en ese sentido. Uno de los problemas más frecuentes con los que se encuentra u...
Article
Full-text available
Resumen Desde su inicio, durante el curso 2002-03, el Proyecto Mentor en la E.T.S.I. de Telecomunicación de la Universidad Politécnica de Madrid [1], ha supuesto una notable mejora en la orientación –académica, social y administrativa– que se le proporciona al estudiante que accede por primera vez a la Escuela, tanto al alumno que se incorpora por...
Article
Full-text available
Resumen El reconocimiento de la orientación como un aspecto inherente a la calidad de la enseñanza universitaria ha sido reconocido por el propio Consejo de Universidades [1], aspecto que sigue siendo una asignatura pendiente de la misma [2], con muy pocas iniciativas en ese sentido. Uno de los problemas más frecuentes con los que se encuentra un a...
Article
Full-text available
In this work, the effect of interference due to noise or due to the presence of a tone in the band in the bit rate of data links (ACL) in bluetooth technology using different packet types (DM1, DH1, DM3, ...) is described. The maximum data rate that we have obtained using each packet type is used as a reference. The effect of noise degrades the dat...
Article
Full-text available
Las ideas preliminares acerca de la necesidad de desarrollar los mecanismos de asistencia al alumno en al ETSI de Telecomunicación de la UPM surgieron a raíz del informe final de Evaluación de la Calidad de la Titulación de Ingeniero de Telecomunicación de la UPM. en el que se identificaba como punto débil la existencia de" alumnos insuficientement...

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