Akihiko Ito

Akihiko Ito
Yokohama National University · Graduate School of Environment and Information Sciences

Ph.D.

About

147
Publications
6,666
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1,739
Citations
Additional affiliations
April 2016 - present
Yokohama National University
Position
  • Professor (Associate)
April 2009 - March 2016
Tohoku University
Position
  • Professor (Assistant)

Publications

Publications (147)
Article
Rutile and anatase TiO2 films were prepared by laser chemical vapor deposition using CO2 and Nd:YAG lasers. The effects of laser wavelength on the phase, orientation, and microstructure of these TiO2 films were investigated. Using a CO2 laser, single-phase rutile TiO2 films were obtained at 826–1225 K. These films showed a (100) orientation and a d...
Article
A YBa2Cu3O7-δ (YBCO) film was prepared on a multilayer-coated Hastelloy C276 substrate by laser-assisted metalorganic chemical vapor deposition using a single liquid source precursor. A c-axis-oriented YBCO film was grown epitaxially on a (100) CeO2 layer at a deposition rate of 11 μm h−1. A screw dislocation and stacking faults were observed in th...
Article
Alumina (Al2O3)-zirconia (ZrO2) nanocomposite films were prepared by laser chemical vapour deposition. α-Al2O3-ZrO2 and γ-Al2O3-t-ZrO2 nanocomposite films were prepared at 1207 and 1000K, respectively. In the nanocomposite films, 10-nm-wide t-ZrO2 nanodendrites grew inside the α- or γ-Al2O3 columnar grains. The γ-Al2O3-t-ZrO2 nanocomposite films ex...
Article
α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) and the effects of precursor vaporization temperature (Tvap), total chamber pressure (Ptot), laser power (PL) and deposition temperature (Tdep) on the phase, orientation and texture of Al2O3 film were investigated. At Ptot = 0.93 kPa, α-Al2O3 films were obtained in the region of...
Article
Highly transparent Lu2O3 ceramics with and without Nd3+ and Eu3+ dopants were fabricated by spark plasma sintering using a two-step pressure profile. A transmittance at 1080 nm for the Lu2O3 ceramics sintered by as-received powders at a pressure of 100 MPa was 57%. By sintering ball-milled Lu2O3 powders with 0.2 mass % LiF at a preloading pressure...
Article
SrHfO3 films were prepared using metal–organic chemical vapor deposition (MOCVD) with hafnium tetrakis(acetylacetonate) and two different Sr precursors, and the effects of Sr content in the vapor and deposition temperature on crystal phase and microstructure were investigated. With the strontium bis(dipivaloylmethanate) [Sr(dpm)2] precursor, low Sr...
Article
We prepared HfO2–Al2O3 nanocomposite films using chemical vapor deposition. Fibrous and lamellar microstructures formed in the monoclinic and tetragonal HfO2 (m/t-HfO2)–α-Al2O3 films at deposition temperature of 1573 K and Al mole fraction in the precursor vapor of 36–74 mol %Al2O3. Characterization by electron microscopy revealed that the m/t-HfO2...
Article
High-speed epitaxial growth of a (4 2 0)-oriented Y3Fe5O12 (YIG) thick film on (4 2 0) Y3Al5O12 substrate was demonstrated with a high deposition rate of 33 μm h⁻¹ using metal-organic chemical vapor deposition. The epitaxial YIG thick film exhibited a high saturation magnetization of 202 emu cm⁻³, which was greater than the value reported for a sin...
Article
High-speed epitaxial growth of M-type strontium hexaferrite (SrFe12O19; SrM) films was demonstrated on a c-cut sapphire substrate using metal–organic chemical vapor deposition. c-axis-oriented SrM films were obtained at a deposition temperature of 1273 K and a total chamber pressure of 1.5 kPa. The epitaxial SrM films had in-plane orientation relat...
Article
The Lu2Ti2O7-Lu3NbO7 system, belonging to A2B2O7 with a cubic structure, is attractive for tailored properties by substitution. In this study, Lu2+0.25xTi2-0.5xNb0.25xO7 (x = 0-4) transparent ceramics were fabrication by reactive spark plasma sintering using commercially available Lu2O3, TiO2 and Nb2O5 powders. The phase evolution, microstructure,...
Article
(100) SrTiO3 transparent thick film was synthesized via high-speed epitaxial growth of close-packed nanocolumnar grains grown on (100) MgAl2O4 single-crystal substrate using laser chemical vapor deposition. The (100) epitaxial SrTiO3 film synthesized at a total chamber pressure of 0.4 kPa and a deposition temperature of 1113 K was optically transpa...
Article
Crystal growth from the vapor phase is an alternative to melt solidification and sintering for fabricating optical materials with high melting points and reversible phase transformations. We demonstrated the rapid synthesis of transparent thick films of Eu-doped monoclinic HfO2 (Eu3+:HfO2) and cubic Lu2O3 (Eu3+:Lu2O3) using laser-assisted metal–org...
Article
We demonstrated the self-oriented growth of ytterbium silicate films at high deposition rates using laser chemical vapor deposition (laser CVD). β-Yb2Si2O7, X1-Yb2SiO5, and X2-Yb2SiO5 phases preferred (001)β and (110)β, (100)X1 and (021)X2, and (221)X2 orientations, respectively. The self-oriented growth was associated with crystallographic feature...
Article
We demonstrated selective self-oriented growth of triclinic tungsten trioxide (δ-WO3) films with (2 0 0), (0 0 2), and (0 2 0) orientations on polycrystalline AlN substrate using metal-organic chemical vapor deposition (MOCVD) by changing W(CO)6 vaporization temperature. At deposition temperatures of 1123–1223 K and total chamber pressure of 0.2 kP...
Article
Monoclinic hafnia (m-HfO2) films were prepared on polycrystalline AlN substrates via thermal and laser chemical vapor deposition (thermal CVD and laser CVD). Highly self-oriented growth of (020) and (002) m-HfO2 films was demonstrated at a high deposition rate. Films prepared using thermal CVD exhibited a porous microstructure and no preferred orie...
Article
We demonstrated metal-organic chemical vapor deposition of single-phase MgSiO 3 -orthopyroxene (-opx) and α-Mg 2 SiO 4 films, and α-Mg 2 SiO 4 –MgO composite films with self-oriented growth on a polycrystalline AlN substrate using Mg acetylacetonate and tetraethyl orthosilicate precursors. We obtained (020)-oriented MgSiO 3 -opx films, (002)-orient...
Article
We have grown Bi0.9Sr0.1CuSeO epitaxial thin films on MgO and SrTiO3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in th...
Article
We have grown epitaxial tin monoselenide (SnSe) films on MgO or SrTiO3 (STO) substrates by pulsed laser deposition (PLD) at T s = 473 or 573 K, and investigated the optimized growth condition in terms of crystal orientation, crystallinity, and electrical resistivity. For the PLD procedure, a SnSe x (x = 1.0–1.6) target containing excess Se was used...
Article
In this work, we report the preparation of nanostructured NaTaO3 and SrTiO3 thin films on stainless steel substrates by laser assisted chemical vapor deposition (LCVD) and their application as photocatalysts for hydrogen evolution under UV light. The effect of the deposition conditions on the compositions and microstructures of the materials is dis...
Article
Full-text available
We have fabricated (Pr1−yYy)1-xCaxCoO3 (PYCCO) epitaxialfilms with various thicknesses by pulsed laser deposition on the SrLaAlO4 (SLAO) substrate that applied an in-plane compressive stress to the film, and investigated the temperature dependence of the electrical resistivity,ρ(T), of the films. An anomalous ρ(T) upturn with a broad hysteresis cou...
Article
Epitaxial (110) SrTiO3 films were prepared on (110) MgAl2O4 substrates using laser chemical vapour deposition (LCVD). The effect of the deposition temperature on the orientation and microstructures was investigated. The (111)/(110) co-oriented SrTiO3 films were prepared in the temperature range 980–1030 K, while epitaxial (110) SrTiO3 films were ob...
Article
We demonstrated the high-speed laser chemical vapor deposition of orthorhombic NaTaO3 (o-NaTaO3) films. The orientation of the o-NaTaO3 films was changed from (101) to (112) to (001) plane as the increase of deposition temperature from 823 to 913 K. o-NaTaO3 films had faceted surfaces and columnar cross sections. The deposition rates of o-NaTaO3 fi...
Article
Ce-doped lutetium aluminum garnet Lu3Al5O12 (LuAG) nanoceramics were fabricated at 1600 °C and 1700 °C by spark-plasma sintering (SPS) method from nano-powders prepared by radiation synthesis. Both undoped and Ce-doped LuAG ceramic samples were also prepared from the nano-powders at 1700 °C with significantly increased pre-heating rate. The backsca...
Article
Epitaxial (100) and (111) SrTiO3 films were prepared on (100) and (111) MgO single-crystal substrates, respectively, using laser chemical vapor deposition. The effect of deposition temperature (Tdep) on the orientation and microstructure of the SrTiO3 films was investigated. On the (100) MgO substrates, SrTiO3 films showed a (111) orientation at a...
Article
Full-text available
BaTi2O5 (BT2) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature (Tdep), the orientation of BT2 thic...
Article
TiO2 is widely used in dental materials as orthopedic and dental implant thanks to its good properties and biocompatibility. Rutile- and anatase-type TiO2 films were prepared by laser chemical vapor deposition using Nd:YAG laser. The TiO2 films showed cauliflower like microstructures at laser power of 160 W. The highest deposition rate was 17.1 μm/...
Article
Full-text available
(Pr1−yMy)1−xCaxCoO3epitaxialfilms (M=Y, Gd) have been successfully fabricated by pulsed laser deposition on the single crystal substrates with different lattice constant. The polycrystalline bulk of this material shows a first-order metal-insulator (MI) transition below the critical temperature. Although ρ(T) of all the as-grown films shows a semic...
Article
Tetragonal-ZrO2 (t-ZrO2)-dispersed amorphous SiO2 composite films were prepared by laser chemical vapor deposition at high deposition rates of 40–300 μm h−1. Without SiO2 the films prepared at deposition temperatures of 869–1246 K contained monoclinic ZrO2. ZrO2 was stabilized in its tetragonal phase in an amorphous SiO2 matrix at deposition temper...
Article
We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920K on the sapphire substrate. The films comprised...
Article
β-Al2TiO5 film with a feather-like structure was prepared by laser chemical vapor deposition. The β-Al2TiO5 film consisted of columnar grains. Oriented microcolumns grew on the side of the columnar grains, forming a feather-like structure. Saw-like nanostructures were developed on the microcolumns. The microstructural evolutions of columns and nano...
Article
Pseudobrookite Ti3−δO4N films were prepared by laser chemical vapor deposition with titanium tetraisopropoxide and NH3 as precursors. By increasing the deposition temperature from 964 K to 1294 K, the phase composition of the films changed from TiO2 to Ti3−δO4N and subsequently to Ti(O,N). Ti3−δO4N films with fine columnar grains were obtained at 1...
Article
Highly (0 0 1)-oriented SrCO3 films were prepared using laser chemical vapor deposition. The degree of (0 0 1) orientation of the SrCO3 films increased from 82 to 100% as the deposition temperature increased from 848 to 923 K. The surface morphology of the (0 0 1)-oriented SrCO3 film was characterized by polygonal grains with striped facets, and py...
Article
YBa2Cu3O7−δ (YBCO) films with thicknesses from 0.10 to 0.73 μm were prepared on a multilayer-coated Hastelloy C276 tape by laser chemical vapor deposition (laser CVD) using a single liquid precursor. c-axis-oriented YBCO films with an in-plane orientation were obtained. With increasing film thickness from 0.10 to 0.73 μm, the a-axis orientation sli...
Article
Absorption spectroscopy at 4 K, site selective spectroscopy technique at 77 K, decays associated to the applications of barycentre plot law (Antic-Fidancev) and crystal-field strength concept (Auzel and Malta) are used to attempt the assignment of Yb3+ energy levels in C3i and C2 centers of Lu2O3 sesquioxide structure either in ceramics or in cryst...
Article
TiN-TiB2-hBN composites (where hBN denotes hexagonal boron nitride) were prepared by spark plasma sintering at 1973 K for 300 s under 100 MPa. The hBN content was varied from 0 to 30% of the total volume of the composite, while maintaining a TiN:TiB2 ratio of 30:70 vol%. The effects of hBN content on the densification, microstructure, mechanical pr...
Article
We report the detailed analysis of both structural characterization by SEM, thermal conductivity of high value and high resolution spectroscopic properties of Nd3+-doped Lu2O3 transparent ceramics fabricated by the non-conventional SPS method. The emission spectra of the main C2 site shows two close 4F3/2 → 4I11/2 laser lines at 1076.3 and 1080.5 n...
Article
We report the first demonstration of laser oscillation of two close IR emission lines at 1076.3 nm and 1080.5 nm using a 1% Nd3+-doped Lu2O3 transparent ceramics fabricated by the non-conventional Spark Plasma Sintering (SPS) method. A comparison is made with Nd3+-doped Lu2O3 and Nd3+-doped Y2O3 ceramics elaborated by HIP conventional method.
Article
γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films wh...
Article
β-SiC films were prepared by laser chemical vapour deposition using a Nd:YAG laser in a H2 or Ar atmosphere. The effects of the deposition atmosphere on the film phase composition and microstructure were investigated. In a H2 atmosphere, (1 1 1)-oriented β-SiC films consisting of submicron-sized grains were grown at 1273-1473 K, while carbon was co...
Article
C3i, C2 sites and also pairs of Nd3+ in Lu2O3 ceramics and crystal as laser potential sesquioxides are analyzed.
Article
cBN–TiN–TiB2 composites were fabricated by spark plasma sintering at 1773–1973 K using cubic boron nitride (cBN) and SiO2-coated cBN (cBN(SiO2)) powders. The effect of SiO2 coating, cBN content and sintering temperature on the phase composition, densification and mechanical properties of the composites was investigated. SiO2 coating on cBN powder r...
Article
CeO2 and YBa2Cu3O7 − δ (YBCO) films were deposited onto multilayer-coated Hastelloy C276 tape by laser chemical vapor deposition using liquid source precursors. The effect of the thickness of the CeO2 buffer film grown at 720 K on the orientation and electrical properties of the YBCO has been investigated. The optimal thickness of the CeO2 layer wa...
Article
Laser oscillation was demonstrated using a 1 at.% Nd3+-doped Lu2O3 (Nd3+:Lu2O3) transparent ceramic produced by spark plasma sintering. Nd2O3, Lu2O3, and LiF commercial powders were mixed by ball milling and were sintered at 1723 K using a two-step sintering profile. After the transparent Nd3+: Lu2O3 ceramic was annealed in air, its transmittance a...
Article
Full-text available
Transparent Nd-doped Lu2O3 bodies were fabricated by spark plasma sintering, and the effect of LiF addition on sintering, microstructure and transparency of Nd-doped Lu2O3 bodies were investigated. LiF promoted the densification at an early stage of sintering, resulted in high transparency of the Nd-doped Lu2O3 body. The optimal content of LiF was...
Article
The X-ray single crystal structure determination of Lu2O3 sesquioxide and of polycrystalline transparent ceramic fabricated by the unconventional spark plasma sintering (SPS) method is presented for the first time. High quality single crystals of Lu2O3 samples were obtained by using both the micropulling-down (μ-PD) method and the laser heated pede...
Article
TiN–TiB2 composites were fabricated by spark plasma sintering at 1773–2573 K. Effects of TiN and TiB2 content on relative density, microstructure, and mechanical properties were investigated. Above 2373 K, TiN–TiB2 composites exhibited relative densities over 95%. A high density of 99.7% was obtained at 2573 K with 20–30 vol% TiB2. Shrinkage of the...
Article
Transparent single-crystal TiO2 films were grown on (001) SrTiO3 substrate by laser chemical vapor deposition. (001) anatase, (101) anatase, and (110) rutile TiO2 films were epitaxially grown at 1230, 1448, and 1500 K, respectively. The in-plane epitaxial orientation relations were [100] anatase TiO2//[100] SrTiO3 in the (001) anatase TiO2//(001) S...
Article
Nd3+-doped Lu2O3 (Nd: Lu2O3) is a candidate for an infrared scintillator because (i) Lu2O3 has a high density of 9.5 g/cm3 and a high atomic number of 67 and (ii) Nd3+-doped materials emit in the infrared range and the emission lines from Nd3+ can be used in medical applications since human body has a transparency window between 600 and 1,100 nm. H...
Article
YBa2Cu3O7-delta (YBCO) films were prepared on a multilayer-coated Hastelloy C276 tape by laser chemical vapour deposition using liquid-source evaporation. The orientation of the YBCO films changed from a-axis to c-axis when the deposition temperature was increased from 1010 K to 1090 K. The c-axis-oriented YBCO film prepared at 1046 K exhibited cri...
Article
CeO2 and YBa2Cu3O7-delta (YBCO) films were prepared by laser chemical vapor deposition. The (100)-oriented CeO2 films prepared at 975-1088 K consisted of columnar grains with pyramidal caps of the CeO2 (111} planes. The deposition rate was 3.0-5.4 mu m h(-1). The (110)-oriented YBCO films were prepared on the (100)-oriented CeO2 films at a depositi...
Article
Ba β-alumina films were prepared by laser chemical vapor deposition. Mostly single-phase Ba β-alumina films were obtained at 1125–1200 K and for an Al/Ba molar ratio of 12.4–16.6. BaAl2O4 and α-Al2O3 were codeposited with Ba β-alumina under Ba- and Al-rich conditions, respectively. The Ba β-alumina films consisted of hexagonal grains, and the (1 1...
Article
Single-crystalline transparent CeO2 films were prepared on (100) SrTiO3 single-crystal substrates by laser chemical vapor deposition. At deposition temperatures ranging from 952 to 1080 K, epitaxial (100) CeO2 films grew as columnar grains, which resulted in opaque films. The epitaxial CeO2 film prepared at 1120 K exhibited a flat surface and dense...
Article
Full-text available
Polycrystalline aluminum nitride (AlN) films were prepared by laser chemical vapor deposition method using aluminum acetylacetonate and ammonia as source materials. The effects of deposition conditions on the crystal phase, composition and microstructure were investigated. Polycrystalline AlN films were prepared at a laser power above 100 W and a d...
Article
(001)-oriented α-Al2O3 films were prepared on polycrystalline AlN substrates by laser chemical vapor deposition at deposition temperatures of 1373–1455 K. The (001) orientation degree increased from 36% to 90% with increasing vaporization temperature of the Al precursor from 438 to 453 K; the deposition rate also increased from 82 to 175 μm h−1. Th...
Article
a-Axis- and c-axis-oriented YBa2Cu3O7–δ (YBCO) films were grown on (100) SrTiO3 substrate by laser chemical vapour deposition (laser CVD). The effect of lattice mismatch between films and substrates on in-plane and out-of-plane crystallinity and critical temperature (TC) was investigated. The preferred orientation changed from a-axis to c-axis as t...
Article
Sc2O3, Y2O3 and Lu2O3 transparent ceramics were prepared by the spark plasma sintering (SPS) method. After polishing, the samples were semitransparent. Their optical transmittance was 10–40% at 500 nm which corresponded with their semi-transparency. In the X-ray induced emission spectra, a broad emission peak appeared around 335 nm in each sample....
Article
A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (R dep = 11.4 μm h−1). At 300 K and 1 MHz, the dielectric constant (ε r) and loss (tanδ) of the TiO2 film were about 73.0 and 0.0069, respective...
Article
TiO2 thin films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD) method. The effects of laser power (P L) and total pressure (p tot) on the microstructure of TiO2 thin films were investigated. The deposition temperature (T dep) was mainly affected by P L, increasing with P L increasing. The single-phase rutile TiO2...
Article
Full-text available
(1 1 1)-oriented barium titanate (BaTiO3) thick films were prepared on Pt-coated Si substrates by laser chemical vapor deposition. The effects of deposition temperature on the orientation, microstructure, and dielectric response of the BaTiO3 films were investigated. BaTiO3 films exhibited a significant (1 1 1) orientation at deposition temperature...
Article
Full-text available
TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-...
Article
The high-speed epitaxial growth of YBa2Cu3O7−δ (YBCO) superconducting films on multilayer (CeO2/LaMnO3/MgO/Gd2Zr2O7)-coated Hastelloy C276 tape was demonstrated using laser-assisted metal–organic chemical vapour deposition (laser-assisted MOCVD). The preferred orientation of the YBCO films changed from a-axis to c-axis as the deposition temperature...
Article
Full-text available
Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230 K. AlN film prepared at 1047...
Article
Transparent Lu2Hf2O7 body was first prepared by reactive spark plasma sintering using Lu2O3 and HfO2 powders. The Lu2Hf2O7 body sintered at 1723 K for 2.7 ks had an average grain size of 230 nm. The transmittance reached 78% at 2000 nm after annealing at 1123 K for 21.6 ks.
Article
Transparent lutetium niobate (Lu3NbO7) bodies were prepared by reactive spark plasma sintering using Lu2O3 and Nb2O5 powders. Fully dense Lu3NbO7 bodies with density greater than 99.5% of the theoretical were obtained at 1300–1650 °C. The grains steadily grew from 0.1 to 0.6 μm with increasing sintering temperature from 1200 to 1450 °C and signific...
Article
We report a new discovery of Eu2+-doped bulk garnet ceramic scintillators based on reduction of Eu3+ ions without additives. Eu2+-doped Y3Al5O12 and Lu3Al5O12 ceramics were prepared by spark plasma sintering (SPS) method. Using SPS, the green and blue luminescence was observed under UV lamp excitation for Eu2+-doped Y3Al5O12 and Lu3Al5O12 ceramics,...
Article
Dense TiN-TiB2 composites were prepared by spark plasma sintering at 2573 K using TiN and TiB2 powders. With increasing TiN content from 60 to 90 vol%, the c-axis length of TiB2 in the TiN-TiB2 composites decreased from the stoichiometric value (0.3230 nm) to 0.3227 nm because of B deficiency in TiB2, whereas the a-axis length of TiB2 was unchanged...
Article
Full-text available
BaTi5O11 films were prepared on Pt/Ti/SiO2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (P L) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing P L from 62 to 108 W, the deposition temperature (T dep) monotonously increased from 872 to 951 K. At T dep = 920 K...
Article
Full-text available
Epitaxial BaTi2O5 (BT2) thick films were prepared on (1 0 0), (1 1 0) and (1 1 1) MgO single-crystal substrates by laser chemical vapor deposition. (0 1 0)- and (1 1 2)-oriented BT2 thick films grew epitaxially on (1 0 0) and (1 1 0) MgO substrates at deposition temperatures of 1326–1387 K and 1324–1383 K, respectively. On the (1 1 1) MgO substrate...
Article
Full-text available
Detailed scintillation properties of Sc2O3, especially gamma-ray response, are not well studied because of low density and low effective atomic number of this compound. They are reported in this paper. Sc2O3 single crystals grown by the micro-pulling-down method and Sc2O3 translucent ceramics produced by the spark plasma sintering are analyzed. Opt...
Article
Transparent lutetium aluminum garnet (Lu3Al5O12, LuAG) was fabricated by reactive spark plasma sintering. The effect of sintering temperature on the crystal phase, microstructure, transparency and mechanical properties of LuAG bodies was investigated. Fully dense and single-phase LuAG bodies were obtained at sintering temperatures 1573–1923 K. The...
Article
Full-text available
The TiO2 films were prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. With increasing laser power (PL) from 48 to 98 W, the deposition temperature (Tdep) monotonously increased from 849 to 929 K. At Tdep=849 K (PL=48 W), the rutile TiO2 film was prepared with strong (110) and (200) peaks. With increasing Tdep from 849...
Article
Transparent lutetium titanate (Lu2Ti2O7) bodies were fabricated by spark plasma sintering using Lu2O3 and TiO2 powders calcined from 700 °C to 1200 °C. No solid-state reaction was identified after calcination at 700 °C, whereas single-phase Lu2Ti2O7 powder was prepared at 1100 and 1200 °C. The calcination at 700 °C promoted densification at the ear...