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The thermally activated diffusion of germanium atoms implanted in the middle of SiO2 layers has been studied by Rutherford Backscattering Spectroscopy (RBS), X-ray Photoelectron Spectroscopy (XPS), µ-Raman spectroscopy and X-Ray Diffraction (XRD), with and without the presence of co-implanted ¹⁶O⁻ ions. The important role of implantation-induced de...
We investigate the effects of oxygen on the thermal diffusion of germanium atoms, implanted inside a thermally grown SiO2 layer, during high temperature processes (1100°C, 60 minutes). The impact of oxygen presence on Ge diffusion is studied as a function of its origin, as it can come either from the annealing atmosphere (extrinsic source) or from...
The thermal diffusion of Ge implanted into SiO2 films growth on a Si substrate has been studied by nuclear analyses and μ-Raman spectroscopy with and without the presence of co-implanted 30Si and 29Si barriers, each located from both sides of the Ge implanted distribution. Combination of Rutherford backscattering spectroscopy and Resonant nuclear r...
We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched...