Adrien Nélis

University of Namur | FUNDP · Research Centre in Physics of Matter and Radiation (PMR)

The thermally activated diffusion of germanium atoms implanted in the middle of SiO2 layers has been studied by Rutherford Backscattering Spectroscopy (RBS), X-ray Photoelectron Spectroscopy (XPS), µ-Raman spectroscopy and X-Ray Diffraction (XRD), with and without the presence of co-implanted ¹⁶O⁻ ions. The important role of implantation-induced de...

We investigate the effects of oxygen on the thermal diffusion of germanium atoms, implanted inside a thermally grown SiO2 layer, during high temperature processes (1100°C, 60 minutes). The impact of oxygen presence on Ge diffusion is studied as a function of its origin, as it can come either from the annealing atmosphere (extrinsic source) or from...

The thermal diffusion of Ge implanted into SiO2 films growth on a Si substrate has been studied by nuclear analyses and μ-Raman spectroscopy with and without the presence of co-implanted 30Si and 29Si barriers, each located from both sides of the Ge implanted distribution. Combination of Rutherford backscattering spectroscopy and Resonant nuclear r...

We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched...