A. T. Fiory

New Jersey Institute of Technology | NJIT

Digital data for the temperature dependence of electrical resistance, which were extracted and analyzed by Hamlin (arXiv:2210.10766v1) from the pdf file published for "Room temperature superconductivity in a carbonaceous sulfur hydride," show asymmetric serrations in data for 267 GPa in zero magnetic field that comprise smooth and digitized parts....

Significant characteristics of the superconducting transitions reported for carbonaceous sulfur hydride [Snider et al., Nature 585, 373 (2020)] are the exceptionally abrupt onset temperatures and their marked increase toward room temperature at high pressures. Theoretical and experimental studies addressing the superconducting composition and struc...

Significant characteristics of the superconducting transitions reported for carbonaceous sulfur hydride [Snider et al., Nature $\textbf{585}$, 373 (2020)] are the exceptionally abrupt onset temperatures and their marked increase toward room temperature at high pressure. Theoretical and experimental studies addressing the superconducting composition...

Letter/comment on M. Rini, Physics $\textbf{13}$, s94 (July 27, 2020) and A. Sanna et al., Phys. Rev. Lett. $\textbf{125}$, 057001 (2020).

For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical studies, examines silica as the exemplary host and the influence of erbium doping on the refractive index. Analysis...

For erbium (Er)-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical studies, examines silica as the exemplary host and the influence of Er doping on the refractive index. Analysi...

The uniquely characteristic macrostructures of binary hydrogen-clathrate compounds MHn formed at high pressure, a cage of hydrogens surrounding a central-atom host, is theoretically predicted in various studies to include structurally stable phonon-mediated superconductors. High superconductive transition temperatures TC have thus far been measured...

The uniquely characteristic macrostructures of binary hydrogen-clathrate compounds $M$H$_\textrm{n}$ formed at high pressure, a cage of hydrogens surrounding a central-atom host, is theoretically predicted in various studies to include structurally stable phonon-mediated superconductors. High superconductive transition temperatures $T$$_\textrm{C}$...

Unconventional superconductivity in bilayer graphene has been reported for twist angles θ near the first magic angle and charged electrostatically with holes near half filling of the lower flat bands. A maximum superconducting transition temperature TC ≈ 1.7 K was reported for a device with θ = 1.05° at ambient pressure and a maximum TC ≈ 3.1 K for...

The ability to tailor the solid–solid interface for a desired functionality is of enormous interest to biologists/biochemists/biophysicists, chemists, physicists, materials scientists and engineers. By definition, it may be considered that the interface is one of the most common microstructures in the solid state. While interfaces are buried betwee...

A broad overview of the thermal radiative properties of materials is presented. The fundamentals of optical properties of materials in the infrared, as function of temperature, is discussed. Experimental techniques that facilitate the measurements of optical properties of materials in the infrared are showcased. Case studies of a variety of materia...

Interfacing various materials results in stresses and strains that typically alter the properties of either or both interfaced surfaces. In this work, we focus on enhanced light emission properties at the bandgap for silicon interfaced with silica or layers of silica and silicon nitride. This discovery is corroborated by several evidences of engine...

The affiliation and respective footnotes for Sufian M. Abedrabbo and affiliation for Anthony T. Fiory were denoted incorrectly on the original publication of this article. They appear correctly here.

Nature plays a significant role in the evolution of surfaces and interfaces in solids. Corrosion of metals is one such example. Interfaces are ubiquitous in almost all engineered materials and devices and have been known to affect the properties of interfaced materials and films. While the study of solid–solid interfaces represents an important and...

Unconventional superconductivity in bilayer graphene has been reported for twist angles $\theta$ near the first magic angle and charged electrostatically with holes near half filling of the lower flat bands. A maximum superconducting transition temperature $T_\textrm{C}$ $\approx$ 1.7 K was reported for a device with $\theta$ = 1.05$\deg$ at ambien...

Upon thermal annealing at or above room temperature (RT) and high pressure $\it P$ $\sim$ 155 GPa, H$_3$S exhibits superconductivity at $\it T_C$ $\sim$ 200 K. Various theoretical frameworks with strong electron-phonon coupling and Coulomb repulsion have reproduced this record-level $\it T_C$. Of particular relevance is that observed H-D isotopic c...

A maximum superconductive transition temperature $T_\textrm{C}$ = 203.5 K has recently been reported for a sample of the binary compound tri-hydrogen sulfide (H$_\textrm{3}$S) prepared at high pressure and with room temperature annealing. Measurements of $T_\textrm{C}$ for H$_\textrm{3}$S and its deuterium counterpart D$_\textrm{3}$S have suggested...

Unique among alkali-doped A ₃C₆₀ fullerene compounds, the A15 and fcc forms of Cs₃C₆₀ exhibit superconducting states varying under hydrostatic pressure with highest transition temperatures at T_C^meas = 38.3 and 35.2 K, respectively. Herein it is argued that these two compounds under p...

Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the em...

Behavior consistent with Coulomb-mediated high- Tc superconductivity is shown to be present in the intercalated group-4-metal nitride halides Ax(S)yMNX, where the MNX host (M = Ti, Zr, Hf; X = Cl, Br) is partially intercalated with cations Ax and optionally molecular species (S)y in the van der Waals gap between the halide X layers, expanding the b...

Superconductivity in the Tl-based cuprates encompasses a notably broad range of measured optimal transition temperatures TC0, ranging from lowest in the charge-depleted Tl-1201 compounds (Tl1-x(Ba/Sr)1+yLa1-yCuO5-δ), such as Tl0.7LaSrCuO5 (37 K) and TlBa1.2La0.8CuO5 (45.4 K), to highest in the Tl-1223 compound TlBa2Ca2Cu3O9±δ (133.5 K). Seven Tl-ba...

In their article, Zhang et al. [Phys. Rev. B 86, 024516 (2012)] present a remarkable result for A$_x$(S)$_y$TiNCl compounds ($\alpha$-phase TiNCl partially intercalated with alkali A and optionally co-intercalated molecular species S), finding the superconducting transition temperature T$_C$ scales with $d$$^{-1}$, where the spacing $d$ between TiN...

A composition of matter for a layered ionic superconductor comprising a plurality of layers of ions and electronic interaction charges, and having a substantially improved superconducting transition temperature is described. An aspect of the composition includes a first layer comprising a plurality of alkali ions and cesium ions in particular that...

Enhanced band-gap emission from Czochralski silicon substrates of up to ~100 times is reported. This was achieved by processing for a stressed interface resulting from baked and annealed silica films prepared by sol–gel processes. The active dopants include but are not limited to erbium and are prepared with tetraethylorthosilicate (TEOS) while for...

Magnetic Field Assisted Assembly is used to facilitate heterogeneous device assembly on various substrates. The aim of this work is to illustrate techniques that help assemble devices of dimensions less than 50μm in any direction onto Silicon/GaAs wafers. Novel methods are developed to produce highly localized magnetic fields using microfabricated...

The superconductive and magnetic properties of charge-compensated (CaxLa1−x)(Ba1.75−xLa0.25+x)Cu3Oy (normally denoted as CLBLCO) are considered through quantitative examination of data for electrical resistivity, magnetic susceptibility, transition width, muon-spin rotation, x-ray absorption, and crystal structure. A derivative of LaBa2Cu3Oy, catio...

This work reports optical functionality contained in, as well as and produced by, thin film coatings. A sol-gel process, formulated with precursor active ingredients of erbium oxide and tetraethylorthosilicate (TEOS), was used for spin-coating thin (∼130 run) erbium-doped (∼6 at. %) silica films on single-crystal silicon. Annealed films produce inf...

A diaphragm based magnetic field sensor is designed and fabricated. A thin metal diaphragm is used as a sensing element and it responds to an external magnetic field. Deformation of the diaphragm due to the pressure produced from the interaction between the magnetic field and the metal surface is detected electronically through a Wheatstone bridge...

Introduction Designing the Magnetic Field Assisted Assembly system Conclusions

In a recent contribution to this journal, it was shown that the transition temperatures of optimal high-T(C) compounds obey the algebraic relation T(C0) = k(-1)(B)/ℓζ, where ℓ is related to the mean spacing between interacting charges in the layers, ζ is the distance between interacting electronic layers, β is a universal constant and k(B) is Boltz...

The superconducting transition temperatures of high-Tc compounds based on copper, iron, ruthenium and certain organic molecules are discovered to be dependent on bond lengths, ionic valences, and Coulomb coupling between electronic bands in adjacent, spatially separated layers [1]. Optimal transition temperature, denoted as T_c0, is given by the un...

Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were tailored to be compatible with standard CMOS and to be of notably low cost to fabricate optically active media for...

Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes diminished at high erbium concentrations. This work presents studies of thin films (0.2 micron thick) prepared...

Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13 micron) and vacuum annealed; the strongest emission was obtained at ~700 degrees C. Comparative study of annealing...

Our paper on the isotope effect in high-temperature superconductors with cation substitutions presents a comprehensive analysis rooted completely in the experimental evidence. In this Reply we show that pair-breaking disorder, isotope effects, doping-induced variations in Tc and in the magnetic penetration depth, Coulomb's law, and Anderson's theor...

High transition temperature (high-Tc) superconductivity is associated with layered crystal structures. This work considers superconductivity in ultra-thin crystals (of thickness equal to the transverse structural periodicity distance d for one formula unit) of thirty-two cuprate, ruthenate, rutheno-cuprate, iron pnictide, organic, and transuranic c...

The use of an array of programmable solenoids to implement a magnetic field driven assembly of heterogeneous micro-components onto a substrate is studied. A lower limit of component size, the upper limit of the rate of assembly and the efficiency of the assembly from various perspectives is presented. Various statistical tests are performed on the...

Muon spin rotation (μ(+)SR) measurements of square-root second moments of local magnetic fields σ in superconducting mixed states, as published for oriented crystals and powder samples of YBa(2)Cu(3)O(7 - δ) (δ≈0.05), YBa(2)Cu(4)O(8) and La(2 - x)Sr(x)CuO(4) (x ∼ 0.15-0.17), are subjected to comparative analysis for superconducting gap symmetry. Fo...

After reading over our published manuscript, we noticed that the discussion concerning the determination of σ for the ruthenate Ba2YRu0.9Cu0.1O6 in section 2.3.1 (3rd paragraph) is somewhat terse. Herein we provide an expanded analysis which better explains our estimate of γ (and thus σ) for this compound. All numbers, figures and conclusions remai...

Room-temperature 1535 nm band photoluminescence in ~126 nm silica films (6 at% doping), produced by spin coating an Er2O3 and tetraethylorthosilicate sol–gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500–1050 °C). Emission is strongly enhanced for annealing near 850 °C, which is shown by modelling the...

Magnetic Field Directed Assembly is a method that offers a non-statistical solution to the problem of assembly via parallel processing. The method requires the use of magnetic layers on top of devices and in recesses within wafers where they need to be located. We have developed a model that permits us to select magnetic materials that minimize the...

Introduction Experimental Procedure Experimental Results Discussion Conclusions

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7−δ, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7−δ and Bi2Sr2CaCu2O8+δ. The el...

Optically active Er+3 in silica films, which are suitable for silicon-based optical applications, have been prepared by a sol-gel deposition process with high Er atomic concentrations of 6 and 12 %, followed by furnace annealing. Films were characterized for their thickness, index of refraction, and photoluminescence at room temperature. Photolumin...

The method of ion implantation and spike annealing for preparing shallow junctions suitable for the extension regions bridging the channel and source/drain contacts of CMOS transistors are studied by annealing blanket implants. Junction depths at a given sheet resistance for low energy B implants are minimized for the combination of a fast ramp wit...

Boron was implanted into n-type Si at energies from 500 eV to 1 keV and doses near 1E14 cm-2 and 1E15 cm-2. Electrical activation was achieved by rapid thermal annealing (RTA) in nominally pure N2 and 0.1% O2 with the fastest available heating rates of up to 150 °C/s, cooling rates up to 80 °C/s, and included `spike' anneals with minimum dwell time...

Current trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger...

Amorphous silicon films with B, P, and As implants were activated with thermal anneals that include spiking to the maximum temperature. Films were grown over thermal oxide by chemical vapor deposition as two separately implanted 50-nm layers for manipulating dopant placement and diffusion. Electrical activation was determined by Hall van der Pauw a...

Wafers prepared with HF and RCA cleaning were oxidized at atmospheric pressure O2 with an incandescent-lamp processor using temperature ramping at rates up to 150°C/s for heating and 80 °C/s for cooling. The minimum oxidation time obtained by the "spike" method of turning off lamp power prior to reaching a desired peak temperature is effectively 2...

Thermal processing in silicon integrated circuit fabrication steps for dopant activation, metal silicides, annealing, and oxidation commonly uses single-wafer furnaces that rapidly heat wafers with incandescent infrared lamps. Radiation pyrometers and thermocouple probes are the principle methods of measuring wafer temperature for closed-loop contr...

Epitaxial Ge-Si alloy films were grown on Si(100) by molecular beam epitaxy, subsequently given a shallow P implant, and subjected to rapid thermal processing. Heat treatment causes solid-phase epitaxial regrowth of the amorphized implanted layer similar to the case of pure Ge. Phosphorus redistribution, loss, and trapping at the Ge-Si/Si interface...

High resolution electron microscopy is used to probe the atomic scale structure of interfaces and defects in the GexSi1−x/Si system. By careful quantification of lattice images, it is shown that molecular beam epitaxy may be used to grow GexSi1−x/Si (100) and (111) interfaces which are sharp on the scale of the unit cell and flat to within a few at...

The structure/property relationships in the Bi‐Sr‐Cu‐O system near Bi2Sr2CuOx have been investigated. The properties and phase limits of the solid solution Bi2+xSr2_yCuO6±δ have been determined and a structural model for Bi2Sr2CuO6 is proposed.

Temperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from...

The temperature dependence of the electrical conductivity measured in the a-b basal plane of YB2Cu3O7 crystals displays a weak, nearly logarithmic divergence near Tc, which is weaker than the power-law functions predicted by superconducting fluctuations in 1, 2, or 3 dimensions. On the other hand, we find that quasi-particle fluctuations and pair-b...

Structure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The ave...

The growth of single crystals of Bi2+xSr2−yCuO6±δ from alkali chloride fluxes, typically sodium chloride is reported. Electronic properties of the resultant crystals are controlled by the melt composition and the partial pressure of oxygen during growth. Superconducting crystals with Tc's near 10K are obtained under low oxygen partial pressures fro...

Indirect Template Magnetic Field Assisted Assembly (IT-MFAA), a parallel processing technique, is presented. IT-MFAA is designed to assemble devices onto substrates through a versatile and scalable methodology, which is capable of adjusting to manufacturing situations and producing 100% yields with error correction. This paper discusses existing se...

IntroductionEmbossed DiaphragmIntegrated Electronic and Optical Pressure SensorReduction of the Back PressureConclusions

An embossed silicon diaphragm is introduced in the design and fabrication of an integrated two-sensor device. In this integrated approach, the optical pressure sensor is based on Fabry-Perot interferometry and the electronic pressure sensor is based on piezoresistivity. Deformation of the same diaphragm due to external applied pressure can be simul...

The superconducting hole condensate of YBa2Cu3O7 resides in its BaO layers, and involves s-wave paired holes. This picture differs from the currently widespread opinion that the superconductivity at the surface and in the bulk is d-like, and resides in the CuO2 planes: it is the main reason why high-temperature superconductivity has been unsolved.

A novel design for a Fabry-Perot Interferometric Sensor (FPIS) consisting of a Fabry-Perot cavity formed between two bonded surfaces is discussed The Fabry-Perot cavity and the optical fiber to which it is coupled are used as the sensing element and interconnect, respectively. The Fabry-Perot cavity is fabricated using the Micro Electro Mechanical...

An embossed silicon diaphragm is introduced in the design and fabrication of an integrated two-sensor device. In this integrated approach, the optical pressure sensor is based on Fabry-Perot interferometry and the electronic pressure sensor is based on piezoresistivity. Deformation of the same diaphragm due to external applied pressure can be simul...

Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide...

Single crystals of the reduced niobate Ba2Nb15O32 are produced by heating NbO2 in BaO·3B2O3 under high-vacuum conditions. The borate acts both as a source of BaO and as a flux for crystallization. The compound Ba2Nb15O32 crystallizes in space group R3 (a = 7.777 (1) Å, c = 35.518 (6) Å) and contains isolated [Nb6O12]O6 clusters arranged in layers....

A simplified model is presented that simulates the magnetic field distribution in applications to the magnetic field assisted assembly of semiconductor device structures. The simulation uses commercial software (Vizimag). Solenoids of different shapes serve as electromagnets that are responsible for the assembly process by directing devices to desi...

Fabry-Perot interferometry is one of the most reliable of the several optical techniques that can be utilized to facilitate the fabrication of an optical sensor. Devices based on this technique can provide high degree of sensitivity, versatility and immunity to environmental noise. The Fabry-Perot Interferometric Sensor (FPIS), to be discussed in t...

Advanced Nanophotonics; Integrated Photonics; Silicon Nanoelectronics; Light Emission From Silicon

Erbium impurity centers in silicon with strong optical emission properties in the near-Infrared are being sought for efficient silicon-based light sources because of the inherent advantages of integrating silicon photonics with VLSI technology. This work reports investigations of adding proper co-dopants to erbium in silicon through a cost-effectiv...

A simplified model of the magnetic field assisted assembly process is presented and developed. Objects are moved by magnetic forces into an assembled pattern such as into an array of recesses. All the forces involved in the assembly process are considered in the model. An example in which an object comes in contact with the recess and settles into...

For high-Tc superconductors in which transition temperatures Tc are reduced by doping, the oxygen isotope effect (OIE) coefficient in Tc is shown to increase systematically with the pair-breaking rate and with the valence difference between the substituted and native ions. Moreover, the OIE in Tc tends to zero as one approaches optimum (or ideal) s...

A simplified model is presented that simulates the magnetic field distribution in applications to the magnetic field assisted assembly of semiconductor device structures. The simulation uses commercial software (Vizimag). Solenoids of different shapes serve as electromagnets that are responsible for the assembly process by directing devices to desi...

A new embossed diaphragm based Fabry-Perot cavity is introduced in the fabrication of a pressure sensor. An analytical approach is deployed to study the embossed diaphragm and Fabryperot cavity behavior as well the sensor's performance. The advantages of the embossed diaphragm based Fabry-Perot cavity are observed in relation to the flat diaphragm...

The process of magnetic-field-assisted assembly for the integration of semi- conductor devices is described. A simplified model that is relevant to both magnetically assisted statistical assembly and magnetic-field-assisted assembly is presented. This two-dimensional, periodic model, which is a development of earlier work by Fonstad and coworkers, is...

Dopant impurities were implanted at high dose and low energy (1015cm−2, 0.5–2.2keV) into double-side polished 200mm diameter silicon wafers and electrically activated to form p–n junctions by 10s anneals at temperatures of 1,025, 1,050, and 1,075°C by optical heating with tungsten incandescent lamps. Activation was studied for P, As, B, and BF2 spe...

Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is...

Deposition of a silicon nitride coating by plasma-enhanced chemical vapor produces a shallow layer of damage beneath the silicon surface. This layer serves as a reservoir of H storage, which is then released during the metallization firing process and diffuses into the bulk of the cell, passivating defects and impurities. We provide experimental ev...

Deposition of a silicon nitride coating by plasma-enhanced chemical vapor produces a shallow layer of damage beneath the silicon surface. This layer serves as a reservoir of H storage, which is then released during the metallization firing process and diffuses into the bulk of the cell, passivating defects and impurities. We provide experimental...

Muon spin rotation measurements were conducted on a single-crystal of YBa2Cu3O7-delta (Tc = 91.3 K) as a function of temperature and magnetic field [1]. By correctly accounting for the temperature-activated fluxon depinning and disorder known to exist in these and other high-quality YBa2Cu3O7-delta crystals grown today, the underlying ground state...

Recent muon spin rotation (μ+SR) spectroscopy of YBa2Cu3O7 finds that the superconductivity (i) is consistent with nodeless pairing (e.g., s-wave or extended s-wave), after fluxon-pinning is taken into account, and (ii) is well-described by a two-fluid model. These are the same results as found over a decade ago in samples with strongly pinned vort...