Question
Asked 18 September 2017
We use metal to make contact with 2DEG...Is the use of such enormous amount of conducting material in the structure not a matter of thought?
My question deals with High electron mobility transistor...
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We have fabricated Al0.48In0.52As/In0.53Ga0.47As HEMTs using argon implant isolation with rapid thermal annealing that have device-to-device leakage current similar to that measured for mesa-isolated HEMTs. The argon implant-isolated Al0.48In0.52As/In0.53Ga0.47As HEMTs with gate length of 0.15μm have measured ft and fmax of 140 and 200GHz, respecti...
A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins,...