Temporal noise analysis CMOS APS?

I had found some literature that develops MEMS stress sensor (CMOS, N-MOS, P-MOS). However, I can't find commercial solutions for this type of sensor. Is there any replacement? (Stress measurement, tiny dimension).

Many thanks

I have been used a device to measure the capacitance-voltage but when I need to measure the hysteresis I can not put the constant capacitance to measure the voltage-time. Is there is a way i can measure the hysteresis from the capacitance-voltage directly?

Hello,

I am trying to implement capacitive sensor using Arduinio. It is a simple RC circuit. It works as follows,

Concept

--> Self capacitance of a single plate capacitor

Only send pin and receive pins are used (Read from literature and applied)

Problem is most of the literature and videos show sensor working on ADC principle. Send pin sends a high signal and on the receive side time is counted till receive goes high as well. I want to get analog signal (Voltage) from the sensor as i have to use it as trigger for other data acquistion systems. I give 5 volts from send pin and at receive pin i measure analog voltage. It is not grounded. Big question is with respect to which reference voltage is measured here. Sensor works fine and shows voltage drop when touched.

I am beginer in electronics.

Any lead is welcome.

A Gaussian distributed noise is commonly used to simulate TOA sensor radiance. Yet some references (e.g. S. Cogliati 2015, W. Verheof 2014) said that the variance of the noise was linearly related to the TOA radiance. What does this mean?

Has anyone lately come across some comprehensive reviews devoted to sensor type comparison related to DHM (digital holography microscopy) applications? Is it true that CCDs typically outpixel CMOS sensors and have a wider dynamic range (being more expensive though), while CMOS sensors have anti-blooming feature, which is important for DH. Where is the compromise between information loss due to the pixel saturation, when diffraction orders pixels are bloomed by zero order diffraction pixels, and the loss related to low SNR due to poor sensor sensitivity? Does FFC (flat field correction) feature solve that issue in any way? Does sCMOS type sensors handle this problem in any way?

Can we use SOI for capacitive pressure sensor development?

hello, iam working on an electrochemical sensor, to detect protein biomarker using DNA prob, i want to design a read out circuit for my sensor, also i want to know what is the differantce between the condition circuit of resistive and capacitive sensor ( the impedance and capacitance )?

we want to calculate the dynamic range of the one-transistor active pixel sensor (1T-APS), we know the largest light signal the sensor can detect, but it is not easy to clarify the weakest light signal(decided by the noise of the sensor). until now, we just get some idea about the dark current noise, how about other noise ( like the reset noise)? And how to calculate them?

What is the major difference between the pre-layout and post-layout simulation?