Physical Review Applied

We report the existence of confined electronic states at the (110) and (111) surfaces of SrTiO3. Using angle-resolved photoemission spectroscopy, we find that the corresponding Fermi surfaces, subband masses, and orbital ordering are different from the ones at the (001) surface of SrTiO3. This occurs because the crystallographic symmetries of the surface and sub-surface planes, and the electron effective masses along the confinement direction, influence the symmetry of the electronic structure and the orbital ordering of the t2g manifold. Remarkably, our analysis of the data also reveals that the carrier concentration and thickness are similar for all three surface orientations, despite their different polarities. The orientational tuning of the microscopic properties of two-dimensional electron states at the surface of SrTiO3 echoes the tailoring of macroscopic (e.g. transport) properties reported recently in LaAlO3/SrTiO3 (110) and (111) interfaces, and is promising for searching new types of 2D electronic states in correlated-electron oxides.

Modern electronic devices are unthinkable without the well-controlled formation of interfaces at heterostructures. These often involve at least one amorphous material. Modeling such interfaces poses a significant challenge, since a meaningful result can only be expected by using huge models or by drawing from many statistically independent samples. Here we report on the results of high throughput calculations for interfaces between crystalline silicon (c-Si) and amorphous silicon nitride (a-Si$_3$N$_{3.5}$:H), which are omnipresent in commercially available solar cells. The findings reconcile only partly understood key features. At the interface, threefold coordinated Si atoms are present. These are caused by the structural mismatch between the amorphous and crystalline part. The local Fermi level of undoped c-Si lies well below that of a-SiN:H. To align the Fermi levels in the device, charge is transferred from the a-SiN:H part to the c-Si part resulting in an abundance of positively charged, threefold coordinated Si atoms at the interface. This explains the existence of a positive, fixed charge at the interface that repels holes.

We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H polytype the bands have dispersion in all the three dimensions. According to our first-principles band structure calculations, the valley states have no interlayer hopping in 3R-MoS$_{2}$, which is proved to be the consequence of the rotational symmetry of the Bloch functions. By measuring the reflectivity spectra and analyzing an anisotropic hydrogen atomic model, we confirm that the valley excitons in 3R-MoS$_{2}$ have two-dimensional hydrogen-like spectral series, and the spreads of the wave function are smaller than the interlayer distance. In contrast, the valley excitons in 2H-MoS$_{2}$ are well described by the three-dimensional model and thus not confined in a single layer. Our results indicate that the dimensionality of the valley degree of freedom can be controlled simply by the stacking geometry, which can be utilized in future valleytronics.

We fabricated YBa$_2$Cu$_3$O$_7$ (YBCO) direct current (dc) nano superconducting quantum interference devices (nanoSQUIDs) based on grain boundary Josephson junctions by focused ion beam patterning. Characterization of electric transport and noise properties at 4.2$\,$K in magnetically shielded environment yields a very small inductance $L$ of a few pH for an optimized device geometry. This in turn results in very low values of flux noise $<50\,{\rm n}\Phi_0/{\rm Hz}^{1/2}$ in the thermal white noise limit, which yields spin sensitivities of a few $\mu_{\rm B}/{\rm Hz}^{1/2}$ ($\Phi_0$ is the magnetic flux quantum and $\mu_{\rm B}$ is the Bohr magneton). We observe frequency-dependent excess noise up to 7$\,$MHz, which can only partially be eliminated by bias reversal readout. This indicates the presence of fluctuators of unknown origin, possibly related to defect-induced spins in the SrTiO$_3$ substrate. We demonstrate the potential of using YBCO nanoSQUIDs for the investigation of small spin systems, by placing a 39$\,$nm diameter Fe nanowire, encapsulated in a carbon nanotube, on top of a non-optimized YBCO nanoSQUID and by measuring the magnetization reversal of the Fe nanowire via the change of magnetic flux coupled to the nanoSQUID. The measured flux signals upon magnetization reversal of the Fe nanowire are in very good agreement with estimated values, and the determined switching fields indicate magnetization reversal of the nanowire via curling mode.

Despite the lack of reproducible experimental confirmation, group V elements have been considered as possible sources of \textit{p}-type doping in ZnO in the form of simple and complex defects. Using \textit{ab initio} calculations, based on state-of-the-art hybrid exchange-correlation functional, we studied a wide range of defects and defects complexes related with N, P, As and Sb impurities. We show that none of the candidates for \textit{p}-type doping can be considered a good source of holes in the valence band due to deep acceptor levels and low formation energies of compensating donor defects. In addition, we discuss the stability of complexes in different regimes.

High fidelity coherent control of quantum systems is critical to building quantum devices and quantum computers. We provide a general optimal control framework for designing control sequences that account for hardware control distortions while maintaining robustness to environmental noise. We demonstrate the utility of our algorithm by presenting examples of robust quantum gates optimized in the presence of nonlinear distortions. We show that nonlinear classical controllers do not necessarily incur additional computational cost to pulse optimization, enabling more powerful quantum devices.

We describe the coherent manipulation of harmonic oscillator and qubit modes using resonant trains of single flux quantum pulses in place of microwaves. We show that coherent rotations are obtained for pulse-to-pulse spacing equal to the period of the oscillator. We consider a protocol for preparing bright and dark harmonic oscillator pointer states. Next we analyze rotations of a two-state qubit system. We calculate gate errors due to timing jitter of the single flux quantum pulses and due to weak anharmonicity of the qubit. We show that gate fidelities in excess of 99.9% are achievable for sequence lengths of order 20 ns.

Ultrasound-driven oscillating micro-bubbles have been used as active actuators in microfluidic devices to perform manifold tasks such as mixing, sorting and manipulation of microparticles. A common configuration consists on side-bubbles, created by trapping air pockets in blind channels perpendicular to the main channel direction. This configuration consists of acoustically excited bubbles with a semi-cylindrical shape that generate significant streaming flow. Due to the geometry of the channels, such flows have been generally considered as quasi two-dimensional. Similar assumptions are often made in many other microfluidic systems based on \emph{flat} micro-channels. However, in this paper we show that microparticle trajectories actually present a much richer behavior, with particularly strong out-of-plane dynamics in regions close to the microbubble interface. Using Astigmatism Particle Tracking Velocimetry, we reveal that the apparent planar streamlines are actually projections of a \emph{streamsurface} with a pseudo-toroidal shape. We therefore show that acoustic streaming cannot generally be assumed as a two-dimensional phenomenon in confined systems. The results have crucial consequences for most of the applications involving acoustic streaming as particle trapping, sorting and mixing.

We study the thermoelectric effects in arrays of disordered nanowires in parallel, at temperatures where charge transport between localized states is thermally assisted by phonons. We obtain large power factors and electrical figures of merit, when the chemical potential probes the band edges of the nanowires, the large thermopowers self-averaging while the small electrical conductances add. The role of the parasitic phonon heat transport is estimated. We also show that phonon absorption and emission occur at opposite ends of the array in band-edge transport, a phenomenon which could be exploited for cooling hot spots in electronic circuits.

We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the intrinsic critical current density (Jc0) was determined to be 8.2 x 10^6 A/cm^2, which is lower than 2.9 x 10^7 A/cm^2, the value for epitaxial CFA-MTJs [Appl. Phys. Lett. 100, 182403 (2012)]. We found that the Gilbert damping constant evaluated using ferromagnetic resonance measurements for the polycrystalline CFA film was ~0.015 and was almost independent of the CFA thickness (2~18 nm). The low Jc0 for the polycrystalline MTJ was mainly attributed to the low damping of the CFA layer compared with the value in the epitaxial one (~0.04).

At strong pump powers, a semiconductor optical cavity passes through a Hopf bifurcation and undergoes self-oscillation. We simulate this device using semiclassical Langevin equations and assess the effect of quantum fluctuations on the dynamics. Below threshold, the cavity acts as a phase-insensitive linear amplifier, with noise $\sim 5\times$ larger than the Caves bound. Above threshold, the limit cycle acts as an analog memory, and the phase diffusion is $\sim 10\times$ larger than the bound set by the standard quantum limit. We also simulate entrainment of this oscillator and propose an optical Ising machine and classical CNOT gate based on the effect.

We demonstrate fast readout of a double quantum dot (DQD) that is coupled to a superconducting resonator. Utilizing parametric amplification in a nonlinear operational mode, we improve the signal-to-noise ratio (SNR) by a factor of 2000 compared to the situation with the parametric amplifier turned off. With an integration time of 400 ns we achieve a SNR of 76. By studying SNR as a function of the integration time we extract an equivalent charge sensitivity of 8 x 10^{-5} e/root(Hz). The high SNR allows us to acquire a DQD charge stability diagram in just 20 ms. At such a high data rate, it is possible to acquire charge stability diagrams in a live "video-mode," enabling real time tuning of the DQD confinement potential.

We study microfluidic self digitization in Hele-Shaw cells using pancake droplets anchored to surface tension traps. We show that above a critical flow rate, large anchored droplets break up to form two daughter droplets, one of which remains in the anchor. Below the critical flow velocity for breakup the shape of the anchored drop is given by an elastica equation that depends on the capillary number of the outer fluid. As the velocity crosses the critical value, the equation stops admitting a solution that satisfies the boundary conditions; the drop breaks up in spite of the neck still having finite width. A similar breaking event also takes place between the holes of an array of anchors, which we use to produce a 2D array of stationary drops in situ.

We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.

Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show how these effects can be used to reliably switch perpendicularly magnetized layers and to move domain walls. A drift-diffusion treatment of the anomalous Hall effect and the anisotropic magnetoresistance describes the spin currents that flow in directions perpendicular to the electric field. In systems with two ferromagnetic layers separated by a spacer layer, an in-plane electric field cause spin currents to be injected from one layer into the other, creating spin transfer torques. Unlike the related spin Hall effect in non-magnetic materials, the anomalous Hall effect and the anisotropic magnetoresistance allow control of the orientation of the injected spins, and hence torques, by changing the direction of the magnetization in the injecting layer. The torques on one layer show a rich angular dependence as a function of the orientation of the magnetization in the other layer. The control of the torques afforded by changing the orientation of the magnetization in a fixed layer makes it possible to reliably switch a perpendicularly magnetized free layer. Our calculated critical current densities for a representative CoFe/Cu/FePt structure show that the switching can be efficient for appropriate material choices. Similarly, control of the magnetization direction can drive domain wall motion, as shown for NiFe/Cu/NiFe structures.

Using first-principles calculations, we propose a microscopic model to explain the reversible lithiation/delithiation of tin-oxide anodes in lithium-ion batteries. When the irreversible regime ends, the anode grains consist of layers of Li-oxide separated by Sn bilayers. During the following reversible lithiation, the Li-oxide undergoes two phase transformations that give rise to a Li-enrichment of the oxide and the formation of a SnLi composite. The anode grain structure stays layered and ordered with an effective theoretical reversible capacity of 4.5 Li per Sn atom. The predicted anode volume expansion and voltage profile agree well with experiments, contrary to existing models.

Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of charge transport, minimizing the density of trap states (trap DOS) is crucial to elucidate the intrinsic transport mechanism. We explore the limits of state-of-the-art organic crystals by measuring single crystalline rubrene field-effect transistors that show textbook like transfer characteristics, indicating a very low trap DOS. Particularly, the high purity of the crystals and the very clean interface to the gate dielectric are reflected in an unprecedentedly low subthreshold swing of $65$ ${\rm mV / decade}$, remarkably close to the fundamental limit of $58.5\,{\rm mV / decade}$. From the measured subthreshold behavior we have consistently quantified the trap DOS by two different methods, yielding an exceedingly low trap density of $D_{bulk} = 1 \times 10^{13}~{\rm cm^{-3}eV^{-1}}$ at an energy of $\sim0.62~{\rm eV}$. These numbers correspond to one trap per eV in $10^8$ rubrene molecules. The equivalent density of traps located at the interface is $D_{it} = 3 \times 10^{9}~{\rm cm^{-2}eV^{-1}}$ which puts them on par with the best crystalline ${\rm SiO_2/Si}$ field-effect transistors.

Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experiments. Here, we report a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm such as an error correcting code. We demonstrate the basic principles of this architecture in a configuration that distributes components of the control system across different temperature stages of a dilution refrigerator, as determined by the available cooling power. The combined setup includes a cryogenic field-programmable gate array (FPGA) controlling a switching matrix at 20 millikelvin which, in turn, manipulates a semiconductor qubit.

In this work, an effective quantum model based on the non-equilibrium Green's function formalism is used to investigate a selectively contacted high density quantum dot array in an wide band gap host matrix for operation as a quantum dot-enhanced single junction solar cell. By establishing a direct relation between nanostructure configuration and optoelectronic properties, the investigation reveals the influence of inter-dot and dot-contact coupling strength on the radiative rates and consequently on the ultimate performance of photovoltaic devices with finite quantum dot arrays as the active medium. The dominant effects originate in the dependence of the Joint Density of States on the inter-dot coupling in terms of band width and effective band gap.

We report on experiments with a microfabricated surface trap designed for trapping a chain of ions in a ring. Uniform ion separation over most of the ring is achieved with a rotationally symmetric design and by measuring and suppressing undesired electric fields. After minimizing these fields the ions are confined primarily by an rf trapping pseudo-potential and their mutual Coulomb repulsion. The ring-shaped crystal consists of approximately 400 Ca$^+$ ions with an estimated average separation of 9 $\mu m$.

Switching of the direction of the magnetic moment in a nanomagnet is studied within a modified Slonczewski's model that permits torsional oscillations of the magnet. We show that the latter may inhibit or assist the magnetization switching, depending on parameters. Three regimes have been studied: the switching by torsional oscillations alone, the switching by the spin-polarized current with torsional oscillations permitted, and the magnetization switching by the current combined with the mechanical twist. We show that switching of the magnetic moment is possible in all three cases and that allowing torsional oscillations of the magnet may have certain advantages for applications. Phase diagrams are computed that show the range of parameters required for the switching.

Mass spectrometry is used in a wide range of scientific disciplines including proteomics, pharmaceutics, forensics, and fundamental physics and chemistry. Given this ubiquity, there is a worldwide effort to improve the efficiency and resolution of mass spectrometers. However, the performance of all techniques is ultimately limited by the initial phase-space distribution of the molecules being analyzed. Here, we dramatically reduce the width of this initial phase-space distribution by sympathetically cooling the input molecules with laser-cooled, co-trapped atomic ions, improving both the mass resolution and detection efficiency of a time-of-flight mass spectrometer by over an order of magnitude. Detailed molecular dynamics simulations verify the technique and aid with evaluating its effectiveness. Our technique appears to be applicable to other types of mass spectrometers.

We demonstrate a dual-axis accelerometer and gyroscope atom interferometer, which forms the building blocks of a six-axis inertial measurement unit. By recapturing the atoms after the interferometer sequence, we maintain a large atom number at high data-rates of 50 to 100 measurements per second. Two cold ensembles are formed in trap zones located a few centimeters apart, and are launched toward one-another. During their ballistic trajectory, they are interrogated with a stimulated Raman sequence, detected, and recaptured in the opposing trap zone. We achieve sensitivities at $\mathrm{\mu \mathit{g} / \sqrt{Hz}}$ and $\mathrm{\mu rad / s / \sqrt{Hz}}$ levels, making this a compelling prospect for expanding the use of atom interferometer inertial sensors beyond benign laboratory environments.

We report on transport in the 2$^{\text{nd}}$ Landau level in in-situ back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration. Leakage currents resulting in dissipation as small as a few pW can cause noticeable heating of the electrons at 10 mK, limiting the formation of novel correlated states. We show that when the heterostructure design is properly optimized, gate voltages as large as 4V can be applied with negligible gate leakage, allowing the density to be tuned over a large range from depletion to over 4 $\times$ 10$^{11}$ cm$^{-2}$. As a result, the strength of the $\nu = 5/2$ state can be continuously tuned from onset at n $\sim 1.2 \times 10^{11}$ cm$^{-2}$ to a maximum $\Delta_{5/2} = 625$ mK at n = $3.35 \times 10^{11}$ cm$^{-2}$. An unusual evolution of the reentrant integer quantum Hall states as a function of density is also reported. These devices can be expected to be useful in experiments aimed at proving the existence of non-Abelian phases useful for topological quantum computation.

The interaction of shear bands with crystalline nanoprecipitates in Cu-Zr-based metallic glasses is investigated by a combination of high-resolution TEM imaging and molecular dynamics computer simulations. Our results reveal different interaction mechanisms: Shear bands can dissolve precipitates, can wrap around crystalline obstacles or can be blocked depending on size and density of the precipitates. If the crystalline phase has a low yield strength, we also observe slip transfer through the precipitate. Based on the computational results and experimental findings a qualitative mechanism map is proposed that categorizes the various processes as a function of the critical stress for dislocation nucleation, precipitate size and distance.

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.

Thermoelectric performance is of interest for numerous applications such as waste heat recovery and solid state energy conversion, and will be seen to be closely connected to topological insulator behavior. In this context we here report first principles transport and defect calculations for Bi$_{2}$Te$_{2}$Se in relation to Bi$_{2}$Te$_{3}$. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We discuss these results in terms of the topological insulator characteristics of these compounds.

We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi2Se3. Theoretical calculations are performed based on a realistic tight-binding model for Bi2Se3. We study both three dimensional devices, which exploit the surface states of Bi2Se3, as well as two-dimensional devices, which exploit the edge states of thin Bi2Se3 strips. We demonstrate that the material properties of Bi2Se3 allow a TMR ratio at room temperature of the order of 1000%. Analytical formulas are derived that allow a quick estimate of the achievable TMR ratio in these devices. The devices can be used to measure the spin polarization of the topological surface states as an alternative to spin-ARPES. Unlike TMR devices based on magnetic tunnel junctions the present devices avoid the use of a second ferromagnetic electrode whose magnetization needs to be pinned.

For two electrically small nonreciprocal scatterers an analytical electromagnetic model of polarizabilities is developed. Both particles are bianisotropic: the so-called Tellegen-omega particle and moving-chiral particle. Analytical results are compared to the full-wave numerical simulations. Both models satisfy to main physical restrictions and leave no doubts in the possibility to realize these particles experimentally. This paper is a necessary step towards applications of nonreciprocal bianisotropic particles such as perfect electromagnetic isolators, twist polarizers, thin-sheet phase shifters, and other devices.

Currently, one of the major nanotechnological challenges is to design thermoelectric devices that have a high figure of merit. To that end, we propose to use bilayer excitons. Bilayer exciton systems are shown to have an improved thermopower and an enhanced electric counterflow and thermal conductivity, with respect to regular semiconductor-based thermoelectrics. Here we present a roadmap towards experimental realization of a bilayer exciton thermocouple. A bilayer exciton heterostructures of $p$- and $n$-doped Bi$_2$Te$_3$ can have a figure of merit $zT \sim 60$. Another material suggestion is to make a bilayer out of electron-doped SrTiO$_3$ and hole-doped Ca$_3$Co$_4$O$_9$.

We report a comprehensive micro-Raman study of a pressurized suspended graphene membrane that hermetically seals a circular pit, etched in a Si/SiO$_2$ substrate. Placing the sample under a uniform pressure load results in bulging of the graphene membrane and subsequent softening of the main Raman features, due to tensile strain. In such a microcavity, the intensity of the Raman features depends very sensitively on the distance between the graphene membrane and the Si substrate, which acts as the bottom mirror of the cavity. Thus, a spatially resolved analysis of the intensity of the G and 2D mode features as a function of the pressure load permits a direct reconstruction of the blister profile. An average strain is then deduced at each pressure. This allows a determination of the Gr\"{u}neisen parameters of $1.8\pm0.2$ and $2.4\pm0.2$ for the Raman G and 2D modes, respectively. The measured blister height is proportional to the cubic root of the pressure load, as predicted theoretically. The validation of this scaling provides a direct and accurate determination the Young's modulus of graphene with a purely optical, hence minimally invasive and contactless approach. We find a Young's modulus of $\left(1.05\pm 0.10\right) \rm TPa$ for monolayer graphene, in perfect match with previous nano-indentation measurements. This all optical approach opens avenues for pressure sensing using graphene and could readily be adapted to other emerging two dimensional membranes.

We address the tunneling current in a graphene-hBN-graphene heterostructure as function of the twisting between the crystals. The twisting induces a modulation of the hopping amplitude between the graphene layers, that provides the extra momentum necessary to satisfy momentum and energy conservation and to activate coherent tunneling between the graphene electrodes. Conservation rules limit the tunneling to states with wavevectors lying at the conic curves defined by the intersection of two Dirac cones shifted in momentum and energy. There is a critical voltage where the intersection is a straight line, and the joint density of states presents a maximum. This reflects in a peak in the tunneling current and in a negative differential conductivity.

We propose a class of linear elastic three-dimensional metamaterials for which the e?ective parameters bulk modulus and mass density can be adjusted independently over a large range|which is not possible for ordinary materials. First, we systematically evaluate the static mechanical properties and the phonon dispersion relations. We show that the two are quantitatively consistent in the long-wavelength limit. To demonstrate the feasibility, corresponding fabricated polymer microstructures are presented. Finally, we discuss calculations for laminates composed of alternating layers of two di?erent metamaterials with equal bulk modulus yet di?erent mass density. This leads to metamaterials with e?ectively anisotropic uniaxial dynamic mass density tensors.

We demonstrate radiofrequency thermometry on a micrometer-sized metallic island below 100 mK. Our device is based on a normal metal-insulator-superconductor tunnel junction coupled to a resonator with transmission readout. In the first generation of the device, we achieve 100 {\mu}K/Hz^1/2 noise-equivalent temperature, limited by the first amplifier, with 10 MHz bandwidth. We measure the thermal relaxation time of the electron gas in the island, which we find to be of the order of 100 {\mu}s. Such a calorimetric detector, upon optimization, can be seamlessly integrated into superconducting circuits, with immediate applications in quantum-thermodynamics experiments down to single quanta of energy.

Layered LiMnO2 and Li2MnO3 are of great interest for lithium-ion battery cathodes because of their high theoretical capacities. The practical application of these materials is, however, limited due to poor electrochemical performance. We herein report a comprehensive first-principles study of defect physics in LiMnO2 and Li2MnO3 using hybrid-density functional calculations. We find that manganese antisites have low formation energies in LiMnO2 and may act as nucleation sites for the formation of impurity phases. The antisites can also occur with high concentrations in Li2MnO3; however, unlike in LiMnO2, they can be eliminated by tuning the experimental conditions during preparation. Other intrinsic point defects may also occur and have an impact on the materials' properties and functioning. An analysis of the formation of lithium vacancies indicates that lithium extraction from LiMnO2 is associated with oxidation at the manganese site, resulting in the formation of manganese small hole polarons; whereas in Li2MnO3 the intrinsic delithiation mechanism involves oxidation at the oxygen site, leading to the formation of bound oxygen hole polarons η+O. The layered oxides are found to have no or negligible bandlike carriers and they cannot be doped n- or p-type. The electronic conduction proceeds through hopping of hole and/or electron polarons; the ionic conduction occurs through lithium monovacancy and/or divacancy migration mechanisms. Since η+O is not stable in the absence of negatively charged lithium vacancies in bulk Li2MnO3, the electronic conduction near the start of delithiation is likely to be poor. We suggest that the electronic conduction associated with η+O and, hence, the electrochemical performance of Li2MnO3 can be improved through nanostructuring and/or ion substitution.

We propose and analyze a hybrid device by integrating a microscale diamond beam with a single built-in nitrogen-vacancy (NV) center spin to a superconducting coplanar waveguide (CPW) cavity. We find that under an ac electric field the quantized motion of the diamond beam can strongly couple to the single cavity photons via polarization interaction. Together with the strong spin-motion interaction via a large magnetic field gradient, it provides a hybrid quantum device where the diamond resonator can strongly couple both to the single microwave cavity photons and to the single NV center spin. This enables coherent information transfer and effective coupling between the NV spin and the CPW cavity via mechanically dark polaritons. This hybrid spin-electromechanical device, with tunable couplings by external fields, offers a realistic platform for implementing quantum information with single NV spins, diamond mechanical resonators, and single microwave photons.

Using a sub-millimetre sized YIG (Yttrium Iron Garnet) sphere mounted in a field-focusing cavity, we demonstrate ultra-strong coupling between magnon and photon modes at millikelvin temperatures with an ultra-high cooperativity of $10^5$ at microwave frequencies. The cavity is designed as a magnetic dipole using a novel patented multiple-post approach that effectively focuses the cavity magnetic field within the YIG crystal with very high filling factor. Coupling strength of 2~GHz is achieved for a bright cavity mode that constitutes about 10\% of the photon energy or 76 cavity linewidths and shows that ultra-strong coupling is possible in spin systems at microwave frequencies. With straight forward optimisations we show that this system has the potential to reach cooperativities of $10^7$, corresponding to a coupling strength of 5.2 GHz. Furthermore, a three-mode strong coupling regime is observed between a dark cavity mode and a magnon mode doublet pair, where the photon-magnon and magnon-magnon couplings are 143~MHz and 12.5~MHz respectively with bandwidths approaching 0.5~MHz.

We investigate the use of guided modes bound to defects in photonic crystals for achieving double resonances. Photoluminescence enhancement by more than three orders of magnitude has been observed when the excitation and emission wavelengths are simultaneously in resonance with the localized guided mode and cavity mode, respectively. We find that the localized guided modes are relatively insensitive to the size of the defect for one of the polarizations, allowing for flexible control over the wavelength combinations. This double resonance technique is expected to enable enhancement of photoluminescence and nonlinear wavelength conversion efficiencies in a wide variety of systems.

Methods for the creation of thin amorphous silicon dioxide (aSiO2) layers on crystalline silicon substrates with very high densities of silicon dangling bonds (so called E' centers) have been explored and volume densities of [E']> 5x10^18 cm-3 throughout a 60nm thick film have been demonstrated by exposure of a thermal oxide layer to a low pressure Argon radio frequency plasma. While the generated high E' center densities can be annealed completely at 300C, they are comparatively stable at room temperature with a half life of about one month. Spin relaxation time measurements of these states between T = 5K and T = 70K show that the phase relaxation time T2 does not strongly depend on temperature and compared to SiO2 films of lower E' density, is significantly shortened. The longitudinal relaxation time T1 ~195(5)us at room temperature is in agreement with low-density SiO2. In contrast, T1 ~625(51)us at T = 5K is much shorter than in films of lower E' density. These results are discussed in the context of E' centers being used as probe spins for spin-selection rules based single spin-readout.

We visualize the formation of fingered flow in dry model sandy soils under different raining conditions using a quasi-2d experimental set-up, and systematically determine the impact of soil grain diameter and surface wetting property on water channelization phenomenon. The model sandy soils we use are random closely-packed glass beads with varied diameters and surface treatments. For hydrophilic sandy soils, our experiments show that rain water infiltrates into a shallow top layer of soil and creates a horizontal water wetting front that grows downward homogeneously until instabilities occur to form fingered flows. For hydrophobic sandy soils, in contrast, we observe that rain water ponds on the top of soil surface until the hydraulic pressure is strong enough to overcome the capillary repellency of soil and create narrow water channels that penetrate the soil packing. Varying the raindrop impinging speed has little influence on water channel formation. However, varying the rain rate causes significant changes in water infiltration depth, water channel width, and water channel separation. At a fixed raining condition, we combine the effects of grain diameter and surface hydrophobicity into a single parameter and determine its influence on water infiltration depth, water channel width, and water channel separation. We also demonstrate the efficiency of several soil water improvement methods that relate to rain water channelization phenomenon, including pre-wetting sandy soils at different level before rainfall, modifying soil surface flatness, and applying superabsorbent hydrogel particles as soil modifiers.

One of the outstanding challenges for ion trap quantum information processing is to accurately detect the states of many ions in a scalable fashion. In the particular case of surface traps, geometric constraints make imaging perpendicular to the surface appealing for light collection at multiple locations with minimal cross-talk. In this report we describe an experiment integrating Diffractive Optic Elements (DOE's) with surface electrode traps, connected through in-vacuum multi-mode fibers. The square DOE's reported here were all designed with solid angle collection efficiencies of 3.58%; with all losses included a detection efficiency of 0.388% (1.02% excluding the PMT loss) was measured with a single Ca+ ion. The presence of the DOE had minimal effect on the stability of the ion, both in temporal variation of stray electric fields and in motional heating rates.

Quantum photonic integrated circuits (QPICs) based on dielectric waveguides have been widely used in linear optical quantum computation. Recently, surface plasmons have been introduced to this application because they can confine and manipulate light beyond the diffraction limit. In this study, the on-chip quantum interference of two single surface plasmons was achieved using dielectric-loaded surface-plasmon-polariton waveguides. The high visibility (greater than 90%) proves the bosonic nature of single plasmons and emphasizes the feasibility of achieving basic quantum logic gates for linear optical quantum computation. The effect of intrinsic losses in plasmonic waveguides with regard to quantum information processing is also discussed. Although the influence of this effect was negligible in the current experiment, our studies reveal that such losses can dramatically reduce quantum interference visibility in certain cases; thus, quantum coherence must be carefully considered when designing QPIC devices.

Here we demonstrate quantum interference of photons on a Silicon chip produced from a single ring resonator photon source. The source is seamlessly integrated with a Mach-Zehnder interferometer, which path entangles degenerate bi-photons produced via spontaneous four wave mixing in the Silicon ring resonator. The resulting bi-photon N00N state is controlled by varying the relative phase of the integrated Mach-Zehnder interferometer, resulting in high two-photon interference visibilities of V~96%. Furthermore, we show that the interference can be produced using pump wavelengths tuned to all of the ring resonances accessible with our tunable lasers (C+L band). This work is a key demonstration towards the simplified integration of multiple photon sources and quantum circuits together on a monolithic chip, in turn, enabling quantum information chips with much greater complexity and functionality.

We analyze the design of a potential replacement technology for the commercial ferrite circulators that are ubiquitous in contemporary quantum superconducting microwave experiments. The lossless, lumped element design is capable of being integrated on chip with other superconducting microwave devices, thus circumventing the many performance-limiting aspects of ferrite circulators. The design is based on the dynamic modulation of DC superconducting microwave quantum interference devices (SQUIDs) that function as nearly linear, tunable inductors. The connection to familiar ferrite-based circulators is a simple frame boost in the internal dynamics' equation of motion. In addition to the general, schematic analysis, we also give an overview of many considerations necessary to achieve a practical design with a tunable center frequency in the 4-8 GHz frequency band, a bandwidth of 240 MHz, reflections at the -20 dB level, and a maximum signal power of approximately order 100 microwave photons per inverse bandwidth.

We present the first demonstration of all-optical squeezing in an on-chip monolithically integrated CMOS-compatible platform. Our device consists of a low loss silicon nitride microring optical parametric oscillator (OPO) with a gigahertz cavity linewidth. We measure 1.7 dB (5 dB corrected for losses) of sub-shot noise quantum correlations between bright twin beams generated in the microring four-wave-mixing OPO pumped above threshold. This experiment demonstrates a compact, robust, and scalable platform for quantum optics and quantum information experiments on-chip.

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling.

Strongly correlated electron systems such as the rare-earth nickelates (RNiO3, R = rare-earth element) can exhibit synapse-like continuous long term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and non-associative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogues may provide insight into biological processes such as decision making, learning and adaptation, while facilitating advanced parallel information processing in hardware.

A semiclassical simulation approach is presented for studying quantum noise in large-scale photonic circuits incorporating an ideal Kerr nonlinearity. A netlist-based circuit solver is used to generate matrices defining a set of stochastic differential equations, in which the resonator field variables represent random samplings of the Wigner quasi-probability distributions. Although the semiclassical approach involves making a large-photon-number approximation, tests on one- and two-resonator circuits indicate satisfactory agreement between the semiclassical and full-quantum simulation results in the parameter regime of interest. The semiclassical model is used to simulate random errors in a large-scale circuit that contains 88 resonators and hundreds of components in total, and functions as a 4-bit ripple counter. The error rate as a function of on-state photon number is examined, and it is observed that the quantum fluctuation amplitudes do not increase as signals propagate through the circuit, an important property for scalability.

We demonstrate a general non--Derjaguin-Landau-Verwey-Overbeek method to stabilize colloids in liquids. By this method, colloidal particles that initially form unstable suspension and sediment from the liquid are stabilized by the addition of salt to the suspending liquid. Yet, the salt is not expected to adsorb or directly interact with the surface of the colloids. For the method to work, the liquid should be a mixture, and the salt needs to be antagonistic such that each ion is preferentially solvated by a different component of the mixture. The stabilization may depend on the salt content, mixture composition, or distance from the mixture's coexistence line.

Since the introduction of the decoy-state technique, phase-randomised weak coherent light pulses have been the key to increase the practicality of quantum-based communications. Their ultra-fast generation was accomplished via compact gain-switched (GS) lasers, leading to high key rates in quantum key distribution (QKD). Recently, the question arose of whether the same laser could be employed to achieve high-speed measurement-device-independent-QKD, a scheme that promises long-haul quantum communications immune to all detector attacks. For that, a challenging highvisibility interference between independent picosecond optical pulses is required. Here, we answer the above question in the affirmative by demonstrating high-visibility interference from two independent GS lasers triggered at 1GHz. The result is obtained through a careful characterization of the laser frequency chirp and time jitter. By relating these quantities to the interference visibility, we obtain a parameter-free verification of the experimental data and a numerical simulation of the achievable key rates. These findings are beneficial to other applications making use of GS lasers, including random number generation and standard QKD.