Superlattices and Microstructures (Superlattice Microst)

Publisher: Elsevier

Journal description

An Interdisciplinary Journal on the Science and Technology of Nanostructures. Superlattices and Microstructures is a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces. The last decade has seen rapid developments in the fabrication, characterization and conceptual understanding of synthetic microstructures in many different material systems including silicon, III-V and II-VI semiconductors, metals, ceramics and organics. The objective of this journal is to provide a common interdisciplinary platform for the publication of the latest research results on all such"nanostructures" with dimensions in the range of 1 - 100 nm; the unifying theme here being the dimensions of these artificial structures rather than the material system in which they are fabricated.


Journal Impact: 2.02*

*This value is calculated using ResearchGate data and is based on average citation counts from work published in this journal. The data used in the calculation may not be exhaustive.

Journal impact history

2016 Journal impact Available summer 2017
2015 Journal impact 2.02
2014 Journal impact 2.50
2013 Journal impact 2.17
2012 Journal impact 1.86
2011 Journal impact 1.81
2010 Journal impact 1.26
2009 Journal impact 1.06
2008 Journal impact 1.40
2007 Journal impact 1.28
2006 Journal impact 1.32
2005 Journal impact 0.73
2004 Journal impact 0.34
2003 Journal impact 0.64
2002 Journal impact 0.76
2001 Journal impact 0.71
2000 Journal impact 1.06

Journal impact over time

Journal impact
Year

Additional details

Cited half-life 4.10
Immediacy index 0.36
Eigenfactor 0.01
Article influence 0.37
Website Superlattices and Microstructures website
Other titles Superlattices and microstructures (Online), Superlattices and microstructures
ISSN 1096-3677
OCLC 36952870
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

This journal may support self-archiving.
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Publications in this journal

  • [Show abstract] [Hide abstract] ABSTRACT: The spin-polarized first-principles calculations are performed to study the electronic structures and magnetic properties of a single or double identical transition metal (TM) atoms X (X = Mn, Fe, Co and Ni) doped monolayer WS2 systems. Although the pristine monolayer WS2 system is a nonmagnetic semiconductor with a direct band gap of 1.820 eV, a single Mn, Fe, Co or Ni doped WS2 systems exhibit the magnetic half-metallic (HM) characters with the total magnetic moments Mtot of 1, 2, 3 and 4 μB and the smaller spin-down gaps Eg of 1.262, 1.154, 1.407 and 1.073 eV, respectively. For double identical TM atoms doped monolayer WS2 systems, except for the cases of two Ni atoms doped at the first (0,1), second (0,2) and third (0,3) nearest-neighbor cation configuration which are antiferromagnetic (AFM), ferromagnetic (FM) and FM metals, respectively, the other cases are all HM ferromagnets, and the total magnetic moment Mtot increases not only for double identical TM dopants Mn, Fe, Co and Ni (except for (0,1) AFM case) successively at the same nearest-neighbor cation configuration but also for each of the double identical TM dopants at the first (0,1), second (0,2) and third (0,3) nearest-neighbor cation configurations successively. These results provide a theoretical guide to choose new two-dimensional HM ferromagnetic materials in spintronic applications.
    Article · Oct 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: The optical losses within the structure of hybrid perovskite solar cells are investigated using only the optical properties of each layer e.g. refractive index and extinction coefficient. This model allows calculating the transmission/reflection rates at the interfaces and absorption loss within any layer. Then, the short circuit current density and loss percentage are calculated versus the perovskite and TiO2 thicknesses from 50 nm to 150 nm. To make our calculations closer to reality, we extracted the optical properties of each device component from the literature reports on glass/TCO/TiO2/perovskite/metal. The simulations were fitted with the experimental results of some relevant references. Our simulations show that ITO transmits the light better than SnO2 as the TCO front electrode, and the light reflection at both sides of the perovskite layer, e.g. at TiO2/perovskite and perovskite/Spiro-OMeTAD, is lower than 25%. The light interference and multiple reflections have been accounted in our calculations and finally we showed that a thicker TiO2 and perovskite cause more optical loss in current density due to stronger absorption.
    Article · Sep 2016 · Superlattices and Microstructures
  • S. Contreras · L. Konczewicz · J. Ben Messaoud · [...] · J. Brault
    [Show abstract] [Hide abstract] ABSTRACT: Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AlN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about ∼ 1 × 10¹⁵ cm⁻³. The donor level, situated about 250 meV below the conduction band edge, was found to be responsible for the experimentally observed increase of free carrier concentration with temperature. The temperature dependence of carrier mobility has been analyzed in the framework of a multimode scattering model. In the investigated samples the main scattering mechanism is supposed to be dislocation scattering.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: The spin-polarized first-principles calculations are performed to study the electronic structures and magnetic properties of a single or double identical transition metal (TM) atoms X (X = Mn, Fe, Co and Ni) doped monolayer WS2 systems. Although the pristine monolayer WS2 system is a nonmagnetic semiconductor with a direct band gap of 1.820 eV, a single Mn, Fe, Co or Ni doped WS2 systems exhibit the magnetic half-metallic (HM) characters with the total magnetic moments Mtot of 1, 2, 3 and 4 μB and the smaller spin-down gaps Eg of 1.262, 1.154, 1.407 and 1.073 eV, respectively. For double identical TM atoms doped monolayer WS2 systems, except for the cases of two Ni atoms doped at the first (0,1), second (0,2) and third (0,3) nearest-neighbor cation configuration which are antiferromagnetic (AFM), ferromagnetic (FM) and FM metals, respectively, the other cases are all HM ferromagnets, and the total magnetic moment Mtot increases not only for double identical TM dopants Mn, Fe, Co and Ni (except for (0,1) AFM case) successively at the same nearest-neighbor cation configuration but also for each of the double identical TM dopants at the first (0,1), second (0,2) and third (0,3) nearest-neighbor cation configurations successively. These results provide a theoretical guide to choose new two-dimensional HM ferromagnetic materials in spintronic applications.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: The electronic structures of CdSe/CdS core-shell nanowires are calculated based on the effective-mass theory, and it is found that the hole states in CdSe/CdS core-shell nanowires are strongly mixed, which are very different from the hole states in CdSe or CdS nanowires. In addition, we find the three highest hole states at the Γ point are almost localized in the CdSe core and the energies of the hole states in CdSe/CdS core-shell nanowires can be enhanced greatly when the core radius Rc increases and the total radius R is fixed. The degenerate hole states are split by the magnetic field, and the split energies will increase when increases from 1/2 to 7/2, while they are almost not influenced by the change of the core radius Rc. The absorption spectra of CdSe/CdS core-shell nanowires at the Γ point are also studied in the magnetic field when the temperature T is considered, and we find there are only two peaks will arise if the core radius Rc and the temperature T increase. The intensity of each optical absorption can be considerably enhanced by increasing the core radius Rc when the temperature T is fixed, it is due to the increase of their optical transition matrix element. Meanwhile, the intensity of each optical absorption can be decreased when the temperature T increases and the core radius Rc is fixed, and this is because the Fermi-Dirac distribution function of the corresponding hole states will increase as the increase of the temperature T.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: Novel carbon quantum dots (CQDs)-modified ZnS nanocomposite was prepared via a fast and facile chemical precipitation technique and was employed for the first time as a photocatalyst for the degradation of Alizarin red S (ARS) dye under visible light irradiation. The structural, morphological and optical properties of the prepared ZnS/CQDs nanocomposite were characterized by multiple analytical techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, thermogravimetric analysis, photoluminescence spectroscopy, transmission electron microscopy, field emission scanning electron microscope equipped with energy dispersive spectroscopy and UV–vis diffuse reflectance spectroscopy. Impact of affecting parameters on the photocatalytic activity of the ZnS/CQDs was studied and optimized. The results showed that the ZnS/CQDs exhibited excellent photocatalytic activity for the degradation of ARS dye i.e. 89% within 250 min, higher than that of the bare ZnS (63%). This enhancement in photocatalytic activity of ZnS/CQDs was attributed to the introduction of CQDs, which could absorb visible light efficiently, suppressing the recombination of electron–hole pairs and improving charge separation. Moreover, various scavengers have been used to study the role of reactive species in the photocatalytic degradation process.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: La0.7Sr0.3MnO3-BaTiO3(LSMO/BTO) and La0.7Sr0.3MnO3-BaTiO3-BiFeO3 (LSMO/BTO/BFO) multilayer thin films are deposited on STO (100) substrate by pulsed laser deposition. In-plane lattice mismatch induced strain is thoroughly investigated with the conclusion, that upper BTO layer of bilayer resides in high strained state, while upper BFO layer of trilayer remains under partially relaxed state. Significantly higher value (∼20) of dielectric constant is observed for LSMO/BTO bilayer in compliance with its higher (12.28 μC/cm2) in-plane strain induced interfacial polarization, which exceeds (2.06 μC/cm2), the observed value of polarization for LSMO/BTO/BFO trilayer. In LSMO/BTO bilayer, antiferromagnetic LSMO phase coexists due to the existence of strong tensile strain between the interfaces, which causes the reduction in value of saturation magnetization up to 50.76 emu/cm3 in comparison to 145.01 emu/cm3 for LSMO/BTO/BFO trilayer. The maximum value of linear magnetoelectric coefficient (α31) observed for LSMO/BTO bilayer is 24.77 mV/cm-Oe, which is higher in comparison to 19.54 mV/cm-Oe for LSMO/BTO/BFO trilayer, where the upper layer undergoes less strain in comparison to the bilayer.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: The influence of the built-in electric field on the binding energy of a bound polaron and the polaron effect in a wurtzite ZnO/MgxZn1−xO quantum well are studied using the improved Lee-Low-Pines intermediate coupling method. The ground-state binding energy, the contributions from different branches of optical phonons to the energy and the binding energy are presented as the functions of well width, impurity position and composition. In the numerical calculations, the anisotropic properties of the frequencies of the different branches of optical phonons, electron effective mass, dielectric constant, the electron-optical phonon interaction and the impurity center-optical phonon interaction are considered. The results show that the built-in electric field has obvious influence on the energy, the binding energy and the polaron effect, and it affects the contributions of different phonon modes to the energy and the binding energy with different degrees. The built-in electric field significantly increases the total phonon contribution to the energy, but it reduces the total phonon contribution to the binding energy. The binding energy of the bound polaron with the built-in electric field is less than that without the built-in electric field, and it declines rapidly with increasing well width. Because of the built-in electric field effects, the contributions from different branches of phonons to the energy and the binding energy and the functions of binding energy with well width and impurity center position are different from the cases without the built-in electric field. The built-in electric field in the wurtzite ZnO/MgxZn1−xO quantum wells has a great impact on the binding energy and polaron effect, and the polaron effect in the wurtzite ZnO/MgxZn1−xO quantum wells is significantly greater than that in the zinc blende GaAs/AlxGa1−xAs QWs, hence, it is necessary to discuss the built-in electric field and polaron effect when considering the problem of electronic state in such systems.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: We investigate through molecular dynamics finite element method with Tersoff potential the mechanical properties of 13 SimCn sheets under uniaxial tension in the armchair and zigzag directions. It is found that the presence and dispersion of silicon atoms in SimCn sheets affect strongly the mechanical properties and the anisotropy of these sheets. The Young's modulus and fracture stress of the SimCn sheet decrease in general when the silicon concentration increases from 0 to 0.2. In contrast, the mechanical properties (Young's modulus, fracture stress, and fracture strain) increase slightly when the silicon concentration increases from 0.3 to 0.5 due to an increase of the degree of dispersion of silicon atoms in the SimCn sheet. The mechanical properties of the sheet are relatively high when the silicon concentration is low or silicon atoms are well dispersed.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: In this work, effects of an on-center hydrogenic impurity, external electric and magnetic fields on the optical rectification coefficient (ORC), second and third harmonic generations (SHG and THG) of a multi-layer spherical quantum dot (MLSQD) are studied. Energy eigenvalues and eigenvectors are calculated using the direct matrix diagonalization method and optical properties are obtained using the compact density matrix approach. Our results reveal that the hydrogenic impurity and external fields have a great influence on these optical quantities. Hydrogenic impurity reduces the magnitude of the resonant peaks and shifts them to the higher energies. An increase in the magnetic (electric) field, leads to increase (decrease) the interval energies and the dipole moment matrix elements. Therefore, resonant peaks of these optical quantities find an obvious blue (red) shift and their magnitudes enhance (diminish) with increasing the external magnetic (electric) field.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: A simple precise transport model has been proposed using rate equation approach for the characterization of a quantum cascade detector. The resonant tunneling transport is incorporated in the rate equation model through a resonant tunneling current density term. All the major scattering processes are included in the rate equation model. The effect of temperature on the quantum cascade detector characteristics has been examined considering the temperature dependent band parameters and the carrier scattering processes. Incorporation of the resonant tunneling process in the rate equation model improves the detector performance appreciably and reproduces the detector characteristics within experimental accuracy.
    Article · Aug 2016 · Superlattices and Microstructures
  • [Show abstract] [Hide abstract] ABSTRACT: The paper investigates and discusses the formation of multiband structure through the Cu2Se-Ga3Se-In3Se2 thin films for maximal solar spectrum utilization. Stacking different semiconductor materials with various band gaps were done by successive evaporation method. Based on the band gap values the layers are arranged (low to high bandgap from the substrate). The XRD results exhibits the formation of CIGS composites through this successive evaporation of Cu2Se/Ga3Se/In3Se2 and treating then with temperature. Scanning Electron Microscope images shows improved crystallinity with the reduction in the larger grain boundary scattering after annealing. Optical spectra shows the stronger absorption in an UV-Visible region and higher transmission in the infrared and near infrared region. The optical band gap values calculated for as prepared films is 2.20 eV and the band gap was splitted into 1.62, 1.92 eV and 2.27eV for annealed samples. This multiband structures are much needed to utilize the full solar spectrum.
    Article · Aug 2016 · Superlattices and Microstructures
  • Achinta Baidya · Trupti Ranjan Lenka · Srimanta Baishya
    [Show abstract] [Hide abstract] ABSTRACT: Circuit performance of an ultra-thin 3D double gate junctionless nanowire transistor, with an emphasis on digital applications, is investigated. Extensive analysis of inverter circuit and universal gates are performed using mixed mode simulation to understand the characteristics and circuit performance of the device. Different properties, like voltage transfer characteristics, transient response, DC gain, and noise margin of these circuits is studied. Furthermore, to explore the influence of high-K gate dielectrics, we examined circuit performance of the junctionless nanowire device with different gate dielectrics (SiO2, Si3N4, and HfO2). Results show that the devices with high-K gate dielectric (HfO2) have improved circuit performance.
    Article · Aug 2016 · Superlattices and Microstructures
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  • Article · Aug 2016 · Superlattices and Microstructures