Superlattices and Microstructures (Superlattice Microst)

Publisher: Elsevier

Journal description

An Interdisciplinary Journal on the Science and Technology of Nanostructures. Superlattices and Microstructures is a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces. The last decade has seen rapid developments in the fabrication, characterization and conceptual understanding of synthetic microstructures in many different material systems including silicon, III-V and II-VI semiconductors, metals, ceramics and organics. The objective of this journal is to provide a common interdisciplinary platform for the publication of the latest research results on all such"nanostructures" with dimensions in the range of 1 - 100 nm; the unifying theme here being the dimensions of these artificial structures rather than the material system in which they are fabricated.

Current impact factor: 2.10

Impact Factor Rankings

2016 Impact Factor Available summer 2017
2014 / 2015 Impact Factor 2.097
2013 Impact Factor 1.979
2012 Impact Factor 1.564
2011 Impact Factor 1.487
2010 Impact Factor 1.091
2009 Impact Factor 0.91
2008 Impact Factor 1.211
2007 Impact Factor 1.344
2006 Impact Factor 1.259
2005 Impact Factor 0.702
2004 Impact Factor 0.431
2003 Impact Factor 0.604
2002 Impact Factor 0.876
2001 Impact Factor 0.859
2000 Impact Factor 0.635
1999 Impact Factor 0.649
1998 Impact Factor 0.831
1997 Impact Factor 0.694
1996 Impact Factor 0.928
1995 Impact Factor 0.613
1994 Impact Factor 0.76
1993 Impact Factor 0.771
1992 Impact Factor 0.912

Impact factor over time

Impact factor
Year

Additional details

5-year impact 1.89
Cited half-life 4.10
Immediacy index 0.36
Eigenfactor 0.01
Article influence 0.37
Website Superlattices and Microstructures website
Other titles Superlattices and microstructures (Online), Superlattices and microstructures
ISSN 1096-3677
OCLC 36952870
Material type Document, Periodical, Internet resource
Document type Internet Resource, Computer File, Journal / Magazine / Newspaper

Publisher details

Elsevier

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Authors pre-print on any website, including arXiv and RePEC
    • Author's post-print on author's personal website immediately
    • Author's post-print on open access repository after an embargo period of between 12 months and 48 months
    • Permitted deposit due to Funding Body, Institutional and Governmental policy or mandate, may be required to comply with embargo periods of 12 months to 48 months
    • Author's post-print may be used to update arXiv and RepEC
    • Publisher's version/PDF cannot be used
    • Must link to publisher version with DOI
    • Author's post-print must be released with a Creative Commons Attribution Non-Commercial No Derivatives License
    • Publisher last reviewed on 03/06/2015
  • Classification
    green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: The optical polarization properties of AlGaN/AlN conventional rectangular shaped and triangular shaped quantum wells (QWs) were investigated using the modified theoretical model based on the effective mass equation. The calculated results show that there is more emission component with TE polarization from triangular shaped QWs than that from conventional QWs for same peak emission wavelength, which is beneficial to the surface emission of Al-rich AlGaN-based light-emitting diodes (LEDs). Furthermore, the AlGaN/AlN triangular shaped QWs have shorter critical wavelength for polarization switching between dominant TE and TM emissions than conventional QWs. This is because that valence subband structure changes for the special band edge potential in AlGaN/AlN triangular shaped QWs. So, the polarization control to enhance the surface emission of DUV AlGaN-based LEDs can be realized by using triangular shaped QWs structure.
    No preview · Article · Mar 2016 · Superlattices and Microstructures
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    ABSTRACT: In this paper, a two-step RESET switching behavior of Ag/Al2O3/HfO2/Pt bilayer resistive random access memory (RRAM) devices is investigated. The interface between the two oxide layers is responsible for the special two-step RESET switching. When the conducting filaments have ruptured in the lower layer, the interface can protect the Ag ions of the filaments from breaking in the upper layer due to the trapped charges or defects at the interface. Therefore, a stable middle resistance state (MRS) is realized and the device exhibits a terrace-like I–V curve during the RESET operations. A filament-based switching mechanism combined with the electron hopping theory is proposed to explain the physical nature of the two-step RESET behavior. Furthermore, a good multi-level resistive switching performance with excellent endurance and retention reliability is obtained.
    No preview · Article · Mar 2016 · Superlattices and Microstructures
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    ABSTRACT: This work investigates the structural and optical properties of mixed ZnO/TiO2 ceramics synthesized at 900 °C by the conventional solid state sintering method. We doped different weights of TiO2 powder (x = 1–7 wt%) to prepare the ceramic pellets. Then we studied the effect of TiO2 content on crystalline properties, grain size and residual stress using X-ray diffraction. XRD patterns revealed the alloying of hexagonal ZnTiO3 and spinel Zn2TiO4 phases as the doping rate x (wt%) increased. The growth of ZnO grains in wurtzite structure was favored along the (100) direction with coefficient texture 2.27 for a TiO2 amount x = 1wt%. Grain sizes were obtained in the range 33–73 nm. We used Williamson-Hall (W–H) analysis and size–strain plot (SSP) method to study the individual contributions of crystallite sizes and lattice strain on the peak broadening of the ZnO/TiO2 composites. Strain, stress and energy density values were calculated by assuming a uniform deformation model (UDM). We investigated the optical properties of the ceramics by Absorbance and Reflectance measurements at room temperature in the wavelength range 200–1000 nm. The results suggested that the addition of TiO2 to ZnO powder led to a high transparency in the visible range and two absorption edges in the UV region. Interestingly, it was seen slight enhancement of the band gap from 3.1 eV to 3.18 eV for the first edge while the second one was enhanced from 4.8 eV to 5.05 eV as the TiO2 doping concentration increased from 1 wt% to 7 wt% respectively.
    No preview · Article · Mar 2016 · Superlattices and Microstructures
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    ABSTRACT: In this paper, the analytical investigation of a new design including drain and source extensions is presented to assess the electrical behavior of cylindrical gate-all-around junctionless (GAAJ) MOSFET for high performance RF and analog applications. Analytical models for drain current and performance parameters are derived incorporating the effect of two highly doped extension regions. Various analog and RF parameters like transconductance, cut-off frequency, drain current drivability, voltage gain and linearity characteristics have also been investigated. The proposed design shows excellent ability in improving the analog performance and provides a good solution to enhance the RF behavior and linearity of GAAJ MOSFET for low cost and high performance analog/RF applications. The proposed model results have been validated against the data obtained from a commercially available numerical device simulator. Moreover, the developed analytical approaches are easy to be implemented into microelectronic software simulators and therefore allow the study of the GAAJ-based deep submicron circuits.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: A Raman study of a twisted bilayer graphene grown by chemical vapor deposition (CVD) and transferred on SiO2 substrate is presented. The Raman spectra show the G and 2D peaks at 1582 cm−1 and 2683 cm−1 respectively. The presence of the interlayer Raman band (I band) in the range 1374 cm−1 - 1440 cm−1 and of the R band at 1484 cm−1, as well as the single-Lorentzian line shape of the 2D peak, reveals the incommensurate stacking of the two graphene layers. From the R band, we determined that the twist angle (θ = 13.9°) is close to the critical angle θc (11.9° for the excitation photon energy of 2.33 eV). The effect of annealing at 1050 °C of the incommensurate twisted bilayer graphene (ItBLG) structure is then studied. The analysis of the Raman spectra allows us to directly quantify the effects of doping and of strain on each graphene layer.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: CaWO4:Eu3+/Gd3+ samples have been synthesized through a hydrothermal process with the assistant of trisodium citrate. The phase and morphology of samples have been characterized by XRD, FTIR, SEM and TEM. The XRD results indicate that the samples have the pure scheelite phase. The SEM and TEM images show that the samples are microspheres containing lots of nanoparticles. The luminescent properties of CaWO4:Eu3+/Gd3+ samples also have been measured. Under the excitation at 278 nm, CaWO4:Eu3+/Gd3+ samples show characteristic emission bands originating from the 5D0 → 7Fj (j = 1, 2, 3 and 4) transitions of Eu3+ ions. The codoping Gd3+ ions can improve the emission intensity highly. Also, the samples show good thermal stability.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: Tuning the energy band gap of ternary alloyed Cd1-xPbxS (x: 0, 0.33, 0.5, 0.67 and 1) quantum dots (QDs) for photovoltaic applications is studied. Alloyed Cd1-xPbxS QDs were adsorbed onto TiO2 nanoparticles (NPs) using ssuccessive ionic layer adsorption and reaction (SILAR) methode. EDX measurements ensure the success adsorption of alloyed Cd1-xPbxS QDs onto the TiO2 electrode. At 100 mW/cm2 (AM 1.5) sun illumination, the photovoltaic performance of alloyed Cd1-xPbxS QDs sensitized solar cells (QDSSCs) was measured. The maximum values of Jsc (1.92 mA/cm2) and η (0.36%) for the alloyed Cd1-xPbxS QDSSCs were obtained when the molar ratio of Cd/Pb is 0.33/0.67. the open circuit voltage (Voc) is equal 0.61 ± 0.01 V for all alloyed Cd1-xPbxS QDSSCs. The electron back recombination rates decrease considerably for alloyed Cd1-xPbxS QDSSCs as x value increases, peaking at 0.67. The electron lifetime (τ) for Cd0.33Pb0.67S QDSSCs is one order of magnitude larger than that of the other alloyed Cd1-xPbxS QDSSCs with different x value. Under ON–OFF cycles to solar illumination, the open circuit voltage decay measurements show the high sensitivity and reproducibility of alloyed Cd1-xPbxS QDSSCs.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: In nanoscale regime, Tunnel field effect transistor (TFET) is the most promising candidate as it provides smaller subthreshold swing (SS) and higher Ion/Ioff ratio than conventional MOSFET. We propose a two-dimensional analytical model for a heterojunction silicon-on-insulator (SOI) TFET using an infinite series solution technique. Analytical expressions for the electrostatic potential, electric field, and energy band are developed by solving 2D Poisson's equation under appropriate boundary conditions. The impact of gate length scaling on the surface potential profile is also analyzed and studied. The electric field is used to calculate the drain current. The derived analytical expressions are validated with Synopsys TCAD results.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: We study theoretically the spin selective transport and the quantum phase transition (QPT) in a double dot device by means of the numerical renormalization group technique. When the gate voltage ε is in the Kondo regime and the interdot hopping t is large enough, a first order QPT between local spin singlet and Sz=1 of the triplet is observed as the magnetic field B increases. Beyond the Kondo regime, the QPTs depend closely on ε and t, and perfect spin filter is found, where the effect of spin filtering could easily be manipulated by tuning external parameters. We show that the interplay between the Zeeman effect and the antiferromagnetic interdot hopping, and occupancy switching are responsible for the QPT and the spin selective transport.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: Titanium dioxide (TiO2) nanostructured thin film (TNF), as an important semiconductor exhibiting large surface-to-volume ratio and unique property, has attracted more and more researches. As an important versatile nanofabrication technique, the glancing angle deposition technique (GLAD) is used to fabricate the TNF, frequently. However, little is known about the influence of GLAD on microstructure, crystalline structure, Ti/O chemical state and photoluminescence (PL) properties of TiO2 thin films. In this paper, pure anatase TNF and traditional TiO2 thin film (TTF) were deposited by combining GLAD system with the annealing treatment. All of the prepared TNFs keep discrete nanoscale columnar structures characterized by SEM. The evolution of morphology, crystallization structure, Ti/O chemical state and PL properties of TNFs and TTFs under annealing treatment have been investigated in detail. Simultaneously, comparing with TTFs, the influence of GLAD on TNFs material properties has been analyzed further. With the optimum annealing temperature (400 °C), one can obtain fine nanostructures and pure anatase precipitation of TNFs. The GLAD technique can adjust the preferred crystal orientation of TiO2 thin films, which can be used as a method of material structural design. Both TNFs and TTFs exhibit broad band (380-700 nm) photoluminescence. Nevertheless, the TNFs exhibit much weaker and smoother PL spectra than that of TTFs, due to the large surface-to-volume ratio. The results indicate the potential good catalytic applications of TNFs deposited by GLAD.
    No preview · Article · Feb 2016 · Superlattices and Microstructures
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    ABSTRACT: This work presents the surface Plasmon effect of Palladium nanoparticles (Pd NPs) on the photovoltaic properties of silicon solar cells. Pd NPs were deposited on the p-type silicon base of the n+/p junction using a chemical deposition method in an aqueous solution containing Palladium (II) Nitrate (PdNO3)2 and Ammonium Hydroxide (NH4OH) followed by a thermal treatment at 500 °C under nitrogen atmosphere. Chemical composition and surface morphology of the treated silicon base were examined by energy dispersive X-ray (EDX) spectroscopy, scanning electronic microscopy (SEM) and Atomic Force Microscopy (AFM). The effect of the deposited Pd NPs on the electrical properties was evaluated by the internal quantum efficiency (IQE) and current–voltage (I–V) measurements. The results indicate that the formation of the Pd NPs is accompanied by an enhanced light absorption and improved photovoltaic parameters.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: Here the effect of Magnesium doped TiO2 and ZnO as hole blocking layers (HBLs) are investigated by using solar cell capacitance simulator (SCAPS). The Impact of Magnesium concentration into the TiO2 and ZnO and effect of operating temperature on the performance of the perovskite solar cell are investigated. Best cell performance for both TiO2 and ZnO HBLs (with cell efficiencies of 19.86% and 19.57% respectively) are concluded for the doping level of 10% of Mg into the structure of HBLs. Increase in operating temperature from 300 K to 400 K are decreased the performance of the perovskite solar cell with both pure and Mg-doped HBLs. However, the cells with pure ZnO layer and with Zn0.9 Mg0.1O layer show the highest (with a decline of 8.88% in efficiency) and the lowest stability (with a decline of 50.49% in efficiency) at higher temperatures respectively. Moreover, the cell with Ti0.9 Mg0.1O2 layer shows better stability (with 21.85% reduction in efficiency) than the cell with pure TiO2 compact layer (with 23.28% reduction in efficiency) at higher operating temperatures.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: The tunneling effect on second-harmonic generation (SHG) coefficient in quantum dot molecule (QDM) is investigated theoretically. By using the compact-density matrix approach and the iterative method, we obtain an analytical expression of the SHG coefficient and numerical calculations for GaAs QDM. The results show that the tunneling strength, Rabi frequency and the size of the QDM have influences on the SHG coefficient.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: We present the real and imaginary part of the dielectric permittivity of natural zeolite composites prepared by using zeolite and silicon powders. The dielectric response (DR) dependences on the frequency (3-300 GHz) of electric field and different Si concentrations (5-33%) are non-monotonic and a maximum peak is observed. This peak position is practically independent on the frequency and its maximum is observed in zeolite composites which included 9% of the Si-powder. Also the maximum peak is decreased by about an order of magnitude when frequency increases from 500 Hz to 5 kHz. Addition of the conductive Si-particles to zeolite-powder leads to two opposite effects. Firstly, the movement of electrons in the Si-particles provides increase of DR. Secondly, cations which leaving from zeolite pores can be neutralized by the particles of Si in the intercrystalline-space. Such a peculiar mechanism for recombination of Si electrons and cations from pores leads to a reduction of DR for large silicon concentrations. Due to the fact that the contribution of free carriers in the decreasing of the DR as the frequency increases, it is consistent with the suggestion that the maximum peak decreases with increasing frequency.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: In this paper, we present a simulation study to report the effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire (NW) Tunnel FET (TFET). The different RF/analog and linearity figure of merits such as gm, RO, gm*RO, fT, fmax, GBW and 1-dB compression point of a NW TFET are extracted and the influence of gate-length downscaling on these parameters is analyzed. The RF/analog performance parameters obtained from InAs TFET is compared with an InAs MOSFET of identical dimension. Results reveal that superior RF and Linearity performance was obtained with gate-length downscaling for both devices under consideration. However, advantages of achieving improved RF performance with gate-length downscaling diminishes in terms of poor analog performance with gate-length downscaling for both the devices. This clearly indicates a trade-off between the analog and RF performance of a down-scaled InAs-based NW TFET and MOSFET. The results reveal that InAs TFET provides better fT, fmax and linearity performance in the saturation region than its MOSFET counterpart. It provides a reasonable RO, gm*RO at lower values of gate-overdrive voltage as compared to the InAs MOSFET. Therefore, this paper concludes that InAs NW TFETs have enormous potential to be a promising contender to the conventional bulk MOSFETs for realization of future generation low-power analog/RF applications.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: An approach for the fabrication of bimetallic (Au-Ag) nanoparticle is investigated and its optical response in terms of refection spectra is obtained. A bimetallic film is deposited on a c-Si substrate followed by thermal dewetting at 800°C for 15 minutes. Randomly dispersed bimetallic nanoparticles are formed on the substrate. The sequence of deposition of the metallic film is reversed and reflection spectra for all the samples including the bare c-Si is obtained. It is seen that the reflection of the bimetallic nanoparticle dispersed c-Si substrate is less than the bare c-Si for almost all the wavelengths ranging from 300-1100nm due to the localized surface plasmon resonance of the bimetallic nanoparticles.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: The structural evolution process of the capped armchair single- and double-walled SiNTs grown from silicon clusters was investigated using the DFT method.The evolution process was described quantitatively by monitoring change of the geometry structures.The initial structural configuration of the single- and double-walled SiNTs was determined by optimizing structure of the small silicon clusters.The evolution process of the SWSiNTs is through forming tubular clusters with a global reconstruction from structure of the double-rings.Then, it elongates through the layer-by-layer growth process with local reconstructions. Eventually, the infinite SiNTs can be constructed with corresponding repeat unit, designed by the periodic characteristics on the basis of tubular clusters.Eventually, All of the SiNTs have a narrow band gap.From calculation of band structure, the band gap which occurs oscillations and gradually decreases with increase of the diameter, length, and the number of walls.
    No preview · Article · Jan 2016 · Superlattices and Microstructures
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    ABSTRACT: In this work, we propose and simulate an asymmetric dual-gate tunneling FET (ADG-TFET) combining a tunneling field effect transistor (TFET) with a junctionless field effect transistor (JLFET). The current is controlled by an in the bottom channel potential barrier as well as the reverse-biased P+ pocket-Intrinsic region (p-i) tunnel junction bandgap, which combines the merits of both bandgap-controlled TFET and barrier-controlled JLFET. The simulation results of ADG-TFET with high-κ dielectric material (HfO2) of 40-nm gate length show excellent characteristics with high ION/IOFF ratio of 3.3×1010 and ION of 302 μA/μm, a steep subthreshold slope (SS) for point SS of 35 mV/decade and average SS of 54 mV/decade at room temperature, which indicates that ADG-TFET is a promising candidate for future low power circuit applications.
    No preview · Article · Jan 2016 · Superlattices and Microstructures