Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society (J VAC SCI TECHNOL B)

Publisher: American Vacuum Society, American Institute of Physics

Journal description

The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles. The JVST B has been established to provide a vehicle for the publication of research dealing with microelectronics and nanometer structures. The emphasis will be on processing, measurement and phenomena, and will include vacuum processing, plasma processing, materials and structural characterization, microlithography, and the physics and chemistry of submicron and nanometer structures and devices. The journal also publishes papers from conferences and symposia that are sponsored by the AVS and its Divisions. JVST B is published six times annually (Jan/Feb, Mar/Apr, May/Jun, Jul/Aug, Sep/Oct, Nov/Dec).

Current impact factor: 1.46

Impact Factor Rankings

2016 Impact Factor Available summer 2017
2014 / 2015 Impact Factor 1.464
2013 Impact Factor 1.358
2012 Impact Factor 1.267
2011 Impact Factor 1.341
2010 Impact Factor 1.268
2009 Impact Factor 1.46
2008 Impact Factor 1.445
2007 Impact Factor 1.419
2006 Impact Factor 1.597
2005 Impact Factor 1.626
2004 Impact Factor 1.664
2003 Impact Factor 1.6
2002 Impact Factor 1.61
2001 Impact Factor 1.549
2000 Impact Factor 1.605
1999 Impact Factor 1.687
1998 Impact Factor 1.662
1997 Impact Factor 1.591
1996 Impact Factor 1.897
1995 Impact Factor 1.556
1994 Impact Factor 1.704
1993 Impact Factor 2.359
1992 Impact Factor 2.27

Impact factor over time

Impact factor
Year

Additional details

5-year impact 1.19
Cited half-life >10.0
Immediacy index 0.37
Eigenfactor 0.01
Article influence 0.36
Website Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures website
Other titles Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, Microelectronics and nanometer structures, Journal of vacuum science and technology., JVST B
ISSN 1071-1023
OCLC 23276603
Material type Periodical
Document type Journal / Magazine / Newspaper

Publisher details

American Institute of Physics

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Author's post-print on free e-print servers or arXiv
    • Publishers version/PDF may be used on author's personal website, institutional website or institutional repository
    • Must link to publisher version or journal home page
    • Publisher copyright and source must be acknowledged with set statement (see policy)
    • NIH-funded articles are automatically deposited with PubMed Central with open access after 12 months
    • For Medical Physics see AAPM policy
    • This policy does not apply to Physics Today
    • Publisher last contacted on 27/09/2013
    • Publisher last reviewed on 13/04/2015
  • Classification
    green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: SUNY Poly SEMATECH has established an infrastructure development program to ensure that needed beam based metrology tools and techniques are available for leading edge semiconductor processes and devices. The design, development, and fabrication of high quality dense array samples with ≤16 nm defects at known locations is a key requirement to assessing new inspection technologies. Due to the technical difficulties of creating high quality programmed defect samples at the required sizes, the authors have undertaken multiple paths of electron beam lithographic development, supporting organizations and processing techniques to optimize and deliver the needed samples. In doing so, this program has created a snapshot of electron beam lithographic capability. This paper discusses our experience with electron beam lithography used to create the arrays samples.
    No preview · Article · Nov 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: Fresnel zone plates are widely used as x-ray nanofocusing optics. To achieve high spatial resolution combined with good focusing efficiency, high aspect ratio nanolithography is required, and one way to achieve that is through multiple e-beam lithography writing steps to achieve on-chip stacking. A two-step writing process producing 50 nm finest zone width at a zone thickness of 1.14 μm for possible hard x-ray applications is shown here. The authors also consider in simulations the case of soft x-ray focusing where the zone thickness might exceed the depth of focus. In this case, the authors compare on-chip stacking with, and without, adjustment of zone positions and show that the offset zones lead to improved focusing efficiency. The simulations were carried out using a multislice propagation method employing Hankel transforms.
    No preview · Article · Nov 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: An optimized CH4+H2 inductively coupled-plasma reactive-ion-etching process for fabrication of high quality nanophotonic InGaAsP/InP waveguide device has been developed. Important parameters that influence e-beam lithography and etching have been optimized for a simple metal lift-off masked process. Smooth sidewalls with low grass content has been demonstrated for >3 μm etch depths in InGaAsP/InP using an Al lift-off etch mask.
    No preview · Article · Sep 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: In the integration flow of directed self-assembly with block copolymers (BCP), the selective removal of one phase of the polymer with respect to the other one is an important step. Different strategies can be implemented such as wet only, exposure, and wet or dry only, each one presenting its highlights and limitations. In this paper, the authors report a wet etching technique allowing an efficient removal of polymethylmethacrylate (PMMA) in PMMA cylinder-forming polystyrene-b-polymethylmethacrylate (PS-b-PMMA) BCP in order to generate contact holes. They confirm that exposure with ultraviolet (UV) light or electron beam is required for PMMA degradation before its complete removal by wet development in acetic acid. A dose-to-clear of 300 mJ/cm2 and 200μC/cm2 using UV exposure and e-beam exposure, respectively, is demonstrated for a thin BCP film coated on a silicon substrate. Complementary characterizations are employed: by ellipsometry to monitor the BCP thickness, by scanning electron and atomic force microscopies to monitor the surface topography and precisely determine the dose-to-clear. It is also shown that this UV exposure dose is dependent on the materials stack used underneath the BCP film due to the radiation absorption. Furthermore, the authors have investigated the ion implantation in the BCP film with oxygen and hydrogen ions and it seems to be another alternative for PMMA degradation in the wet development approach.
    No preview · Article · Sep 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society

  • No preview · Article · Jul 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: Core-shell Fe0.7Ni0.3-NixFe3-xO4 nanowires were fabricated using a three step process. Initially, NiFe2O4 nanowires were fabricated using the electrospinning method; these nanowires were reduced to form Fe0.7Ni0.3 nanowires. The Fe0.7Ni0.3 nanowires were then naturally oxidized to form a shell of NixFe3-xO4 on the surface, obtaining Fe0.7Ni0.3-NixFe3-xO4 core-shell nanowires. The core Fe0.7Ni0.3 and the shell NixFe3-xO4 are crystalline in nature. The core-shell structure is very stable, and even after prolonged exposure to dry air, it maintains the core-shell structure and the magnetic hysteresis character of the bimagnetic system.
    No preview · Article · Jul 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: In this study, the authors characterized field emission for stacked-double-gate all-metal field emitter arrays (FEAs) consisting of 40 000 nanotips. After careful conditioning of the FEAs under ultrahigh vacuum and in low-pressure neon gas ambient, the authors were able to produce a highly collimated beam with a current of similar to 50 mu A which showed an improved beam homogeneity. The beam rms radius reduced by a factor 10 and the transverse energy spread was reduced to well below 1 eV. (C) 2015 American Vacuum Society.
    No preview · Article · Apr 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: Recently, sub-wavelength-pitch stacked double-gate metal nanotip arrays have been proposed to realize high current, high brightness electron bunches for ultrabright cathodes for x-ray free-electron laser applications. With the proposed device structure, ultrafast field emission of photoexcited electrons is efficiently driven by vertical incident near infrared laser pulses, via near field coupling of the surface plasmon polariton resonance of the gate electrodes with the nanotip apex. In this work, in order to gain insight in the underlying physical processes, the authors report detailed numerical studies of the proposed device. The results indicate the importance of the interaction of the double-layer surface plasmon polariton, the position of the nanotip, as well as the incident angle of the near infrared laser pulses.
    No preview · Article · Mar 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: Here, the authors report the field emission investigations of silicon nanotubes (SiNTs) synthesized by vapor phase condensation method in DC arc plasma reactor. The SiNTs have diameters in the range of 10–15 nm and length of a few 100 nm. A maximum current density of 4.2 mA/cm2 has been attained. The turn on field, defined for obtaining a current density of 10 μA/cm2, is found to be 1.9 V/μm. The specimen exhibits a good emission current stability at 1 μA over a period of 3 h. The field enhancement factor, β, is estimated to be ∼5534. The current stability is quantified in terms of standard deviation and its magnitude has been measured to be only 9.7% with respect to the average value.
    No preview · Article · Mar 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: The authors study the electrical transport properties of atomically thin individual crystalline grains of MoS2 with four-probe scanning tunneling microscopy. The monolayer MoS2 domains are synthesized by chemical vapor deposition on SiO2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carrier density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS2. Our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS2.
    No preview · Article · Mar 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society
  • [Show abstract] [Hide abstract]
    ABSTRACT: The authors report on thin-film processing improvements in the fabrication of superconducting quasiparticle-trap-assisted electrothermal-feedback transition-edge sensors used in the design of cryogenic dark matter search detectors. The work was performed as part of a detector upgrade project that included optimization of a new confocal sputtering system and development of etch recipes compatible with patterning 40 nm-thick, α-β mixed-phase W films deposited on 300–600 nm-thick, patterned Al. The authors found that their standard exothermic Al wet etch recipes provided inadequate W/Al interfaces and led to poor device performance. The authors developed a modified Al wet-etch recipe that effectively mitigates geometrical step-coverage limitations while maintaining their existing device design. Data presented here include scanning electron microscope and focused ion beam images of films and device interfaces obtained with the new Al etch method. The authors also introduce a method for quantitatively measuring the energy collection efficiency through these interfaces.
    No preview · Article · Jan 2015 · Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society