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ABSTRACT: This paper outlines a framework for the formation of a research group aimed at promoting innovation in the building industry. The built environment in the United States is failing; economic, social, environmental and technological performance of buildings as well as the industry responsible for their creation has not kept pace with other industries essential to a ensuring a healthy society. While it would appear that research activity is prevalent in academia and, to some extent, in professional practice, the building industry is slow to change. The building industry is examined to identify the barriers currently in place that limit innovation. This paper proposes the formation of a trans-disciplinary group of academics and industry partners focused on translational research aimed at promoting much needed innovation in the building industry. The complexity of the problems needing to be addressed by the building industry is often beyond the scope of knowledge of any one particular field. This framework proposes to move beyond interdisciplinary research, where knowledge is transferred between collaborators, and rather strives for a trans-disciplinary model where team members transcend their own disciplines to inform one another's work. In addition, the research carried out by this group is intended to be translational. Modelled after the successful approach currently implemented in the medical profession, translational research results in a feedback loop where basic research is tested in application. Results become inputs to a new round of basic research, which are then tested again. This cycle continues with new research questions continuously being influenced by the limitations of previous questions. By more directly connecting the efforts of research in academia with the application in practice, the potential exists to make research more visible to both those with the power to implement it, practitioners and industry, and those able to benefit from it, end users.
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ABSTRACT: Whereas in standard quantum-state tomography one estimates an unknown state by performing various measurements with known devices, and whereas in detector tomography one estimates the positive-operator-valued-measurement elements of a measurement device by subjecting to it various known states, we consider here the case of SPAM (state preparation and measurement) tomography where neither the states nor the measurement device are assumed known. For d-dimensional systems measured by d-outcome detectors, we find there are at most d2(d2-1) "gauge" parameters that can never be determined by any such experiment, irrespective of the number of unknown states and unknown devices. For the case d=2 we find gauge-invariant quantities that can be accessed directly experimentally and that can be used to detect and describe SPAM errors. In particular, we identify conditions whose violations detect the presence of correlations between SPAM errors. From the perspective of SPAM tomography, standard quantum-state tomography and detector tomography are protocols that fix the gauge parameters through the assumption that some set of fiducial measurements is known or that some set of fiducial states is known, respectively.
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ABSTRACT: A series of ferecrystalline compounds ([SnSe]1.15)1(V1+xSe2)n with n=1-6 and a thin film V1+xSe2 were synthesized utilizing the modulated elemental reactant technique. The effect of interstitial V-atoms ranging from 0.13≤x≤0.42 in different compounds on structure and electrical properties of these intergrowth compounds is reported. The presence of the interstitial V-atoms for n>1 was confirmed by Rietveld refinements as well as HAADF-STEM cross sections. The off-stoichiometry in the thin film V1.13Se2 causes a suppression of the charge density wave, similar to the effect of non-stoichiometry observed for the bulk compound. The charge density wave of ([SnSe]1.15)1(V1+xSe2)1, however, is not affected by the non-stoichiometry due to its incorporation as volume inclusions or due to the quasi 2-dimensionality of the isolated VSe2 layer. In the compounds ([SnSe]1.15)1(V1+xSe2)n with n=2-6, the temperature dependence of the electrical resistivity approaches bulk-like behavior.
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