Figure - available from: Journal of Computational Electronics
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![a 2D cross section of the initial feature shape with a 200 nm opening and a Ru\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\textrm{Ru}$$\end{document} mask height of 100 nm. b 2D cross section after total etch time of 94s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$94\,s$$\end{document} with the protective polymer layer that is necessary for anisotropic structures](publication/372393110/figure/fig2/AS:11431281197752968@1697076853136/a-2D-cross-section-of-the-initial-feature-shape-with-a-200nm-opening-and-a.png)
a 2D cross section of the initial feature shape with a 200 nm opening and a Ru\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\textrm{Ru}$$\end{document} mask height of 100 nm. b 2D cross section after total etch time of 94s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$94\,s$$\end{document} with the protective polymer layer that is necessary for anisotropic structures
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![Plane wafer rate of SiO2\documentclass[12pt]{minimal}...](publication/372393110/figure/fig3/AS:11431281197752969@1697076853201/Plane-wafer-rate-of-SiO2documentclass12ptminimal-usepackageamsmath_Q320.jpg)
Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic random access memory devices. However, the development of etching technology is challenged by the lack of understanding of complex surface reaction mechanisms and by the intricacy of etchant fl...
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