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Temperature dependent thermal conductivities of 4H-SiC single crystals. They decrease monotonically with the increase of temperature.

Temperature dependent thermal conductivities of 4H-SiC single crystals. They decrease monotonically with the increase of temperature.

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Thermal diffusivity and specific heat of 4H-SiC crystals as a function of temperature are measured, respectively, from room temperature to 600 °C. The thermal conductivity normal to c-axis was calculated from the measured data for both N-type and V-doped semi-insulating (SI) 4H-SiC single crystals. The thermal conductivity of N-type sample normal t...

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... This reduced self-heating enables more stable device performance, though Si-based devices still require thermal management to maintain efficiency under high-power conditions. In contrast, the 4H-SiC substrate stands out due to its much higher thermal conductivity (370-490 W/m K) [40], which allows for efficient heat dissipation. The ability to manage heat more effectively with 4H-SiC, results in better overall device performance compared to β-Ga₂O₃ and Si-based devices. ...
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