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3: Solar PV Global Capacity, by Country or Region, 2007-2017 II. APPLICATIONS OF SOLAR CELLS PV systems are being used in a variety of applications
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With the ever increasing demand for energy, the search for alternative energy sources has increased. The worldwide use of fossil fuels has led to the critical situation of global warming, significantly affecting our health, environment and climate. Extensive emphasis have been put on the implementation of renewable energy sources and solar energy i...
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... marketsChina, the United States, India, Japan and Turkey -were responsible for nearly 84% of newly installed capacity; the next five were Germany, Australia, the Republic of Korea, the United Kingdom and Brazil. For cumulative capacity, the top countries were China, the United States, Japan, Germany and Italy, with India not far behind (see Fig. ...
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... silicon) tandem solar cells. A stabilized record efficiency of 9.47% has independently been confirmed by NREL for an amorphous silicon single junction p-i-n cell (1 cm 2 ) deposited on LP-CVD ZnO coated glass. Micromorph tandem cells with an initial efficiency of 12.3% show after light-soaking a stable performance of 10.8% (Meier et al., 2004). Fig. 3.2 shows for the tandem cell a high initial efficiency of over 12% combined with a high open circuit voltages of 1.4 V. After the light soaking stability test an efficiency of 10.8% could be measured. Adriano and Izete (2012), developed silicon solar cell processes based on low cost chemicals and gases as well as gettering mechanisms ...
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... mechanisms and fabricated more than 12,000 solar cells, achieving efficiencies up to 16%, and two hundred photovoltaic modules were produced and characterized. The yield of solar cell fabrication was of 86% and standard deviation of the module nominal power was of around 2.5%, which denotes the high reproducibility of the developed processes. Fig. 3.3 show the comparison I-V characteristics of n + pn + cells and n + pp + cells. Cell 2 and cell 4 were measured at CalLab -FhG-ISE and cell 1 and cell 3 were the best efficiency (η) achieved of 16.1% and 13.4% for cells with and without back surface field, respectively. Fill factors of around 0.78 were obtained as a result of the ...
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... hybrid bimetallic gold core/silver shell nanostructures. Silica-coated bimetallic nanostructures (Au/Ag/SiO 2 NSs) integrated in the active layer of DSSCs resulted in 7.51% power conversion efficiency relative to 5.97% for reference DSSCs, giving rise to 26% enhancement in device performance. Photocurrent spectra of the best performing DSSCs ( Fig. 3.4) demonstrate that maximum plasmonic enhancement is achieved for DSSCs containing 0.44 wt % Au/Ag/SiO2 nanostructures reaching a maximum PCE ...
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... impedance spectroscopy. The cell capacitance, dynamic resistance, and series resistance were measured. The results show that the transition capacitance (C T ) is dominant up to 0.9 V and beyond 0.9 V diffusion capacitance is significant. The experimental values of cell resistance are in good agreement with calculated cell resistance, as shown in Fig. 3.6. Jonathan et al. (2012), demonstrated light absorption enhancement on a 100 nm, a 500 nm, and a 1000 nm thick GaAs solar cell structure featuring a back reflector, a double-layer anti reflection coating, and a close-packed silica nanosphere array. It was observed that, the thinner the cell, the more the potential for improvement. ...
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... results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the conversion efficiency of the GaAs solar cell. The total conversion efficiency of the solar cell with the deeper nanohole arrays shows a higher value compared to that of the planar or shallow patterned solar cell, as shown in Figure 3.8 ( Kangho et al., 2013). Mrityunjoy et al. (2015), presented improvement performance of GaAs solar cell of antireflection coating and texturing using PC1D simulation. ...
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... in photovoltaic applications. The current-voltage (I-V2) characteristic of the device consisting of ITO/CdTe/Au of two films prepared at two different backing temperatures are shown in Fig. 3.11. The photocurrent is measured using a light source having power of 100 watt white bulb for the films deposited at 250 0 C baking temperature as shown in Fig. 3.11 (Sekhar and Kaushik, 2013). The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas ...
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... CdTe structure, an efficient and cost effective CdTe/Si tandem thin film solar cell can be realized using basic fabrication methods for practical usage in near future. The light J-V curve and External Quantum Efficiency (EQE) graph of the baseline CdTe and modified CdTe structure with silicon wafer found by AMPS-1D simulation are shown in Fig. ...
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... density. The Au nanoparticles embedded in the nanoparticulate-TiO 2 film strongly absorbed light due to the localized surfaceplasmon resonance, and thereby promoted light absorption of the dye. In the DSSCs, the Au nanoparticles generate field enhancement by surface-plasmon resonance rather than prolonged optical paths by light scattering. Fig. 3.14(a) shows the current density-voltage (J-V) characteristics and (b) the incident photon-to-current conversion efficiency (IPCE) spectra. The powerconversion efficiency of the DSSCs exhibits a maximum at the Au/TiO 2 mass ratio of 0.05 and rapidly decreases at 0.07 (Changwoo et al., 2011). Thambidurai et al. (2014a), reported that the ...
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... his effort to determine the effect of interface defect recombination, Amu (2014), went further, and carried out a check by removing the interface layer which accounts for both interface defect recombination. The J-V curve obtained by this check is as shown in Fig.3.15 with a higher efficiency of 8.17% compared to the previous set-up. ...
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... effect on the photovoltaic performance (Andreas et al., 2016). In order to render them suitable for commercial exploitation, the researchers recommended further studies which are needed to fully elucidate the mechanism of degradation, fine tune the corresponding interfaces and redesign the device for optimum long term efficiency. As shown in Fig. 3 ...
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... (Jsc), fill factor (FF), and power conversion efficiency (PCE) of 1.01 mA cm -2 , 0.77, and 0.27 %, respectively. This development amounts to 50 % efficiency enhancement over the reference DSSC that had a shortcircuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of 0.7 mA cm -2 , 0.57, and 0.18 %, respectively. Fig. 3.17 shows the J-V and P-V characteristic curves of both the bare and intercalated plasmonic Ag NPs DSSCs. The photovoltaic performances of the cells are determined through the photovoltaic parameters (short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and conversion efficiency ( ᶯ ), which are obtained ...
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... completely eliminated; (2) the TCO and the photoelectrode are made of the same material. Testing showed that under AM1.5 illumination, a short current density of 15.7 mA/cm 2 and a power conversion efficiency η of 1.82% can be achieved. The η is more than two times higher than the η reported earlier for ZnO-nanorod DSSCs with the same structure. Fig. 3.18 shows typical I-V curves of the new-structure and conventional-structure ZnO-nanorod DSSCs under AM1.5 (100 mW/cm2) illumination Zinc Oxide thin films are formed by electrodeposition of Zinc Nitrate. Their structural and optical characteristics were confirmed using UV-VIS absorption and emission. The FTIR of ZnO was also ...
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... V (film B) and -1.4 V (film C). SEM images, XRD and UV-Vis analysis were conducted to reveal the morphologic, structural and optical properties of the films at three potentials. DSSCs were assembled and the photovoltaic parameters were obtained through J-V plots. DSSC with 0.031% of efficiency was demonstrated at -1.4 V of deposition potential. Fig. 3.19 reports the photocurrent density voltage (J-V) plots under the 100 mW/cm 2 illumination which shows the Pmax of 1.22 x 10 -5 , 2.32 x 10 -7 and 3.07 x 10 -5 (W/cm 2 ) for sample A, B and C respectively (Vanja et al., 2018). Mati et al. (2019), report on an efficient dye-sensitized mesoporous photoanode of Ti doped zinc oxide ...
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... JMESTN42352990 10315 As shown in Fig. 3.21 and 3.21, the spectral (Transmittance spectral and Reflectance spectral) read from 190nm to 1100nm. The transmittance spectrum increases in the visible region of wavelength from 400nm to 800nm and decreases in the infrared region above 800nm wavelength. The film deposited for 2 hours shows the highest transmittance while the one ...
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... deposited for 2 hours shows the highest transmittance while the one deposited for 3 hours show the lowest transmittance and a film deposited for 1 hour has a transmittance. Also, the reflectance spectra reveal that the film has the same percentage for all depositions time. The optical band gap energies of the film were extrapolated and show in Fig. 3.21 and 3.21 for the film deposited for 1 hour and 2 hours respectively. The values of band energies are 3.60eV and 3.70eV for the film deposited for 1 hour and 2 hours respectively ( Babatunde et al., ...
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... their study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides. As shown in Figure 3.23, the J-V characteristic at room temperature in the dark shows that the forward current of the cells increases slowly with increasing voltage. Fig. 3.24 depicts generation of electricity by a solar cell using a P-N junction. ...
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... 2 illumination. Therefore, their study will help advance the course for the development of low-cost, environmentally friendly, and sustainable solar cell materials from metal oxides. As shown in Figure 3.23, the J-V characteristic at room temperature in the dark shows that the forward current of the cells increases slowly with increasing voltage. Fig. 3.24 depicts generation of electricity by a solar cell using a P-N junction. ...
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... poly-[3-(2-methylhexan-2-yl)-oxy-carbonyldithiophene] (P3MHOCT) that through a thermal treatment is converted to the insoluble form poly(3-carboxydithiophene) (P3CT) that generally gives stable polymer solar cells. The devices employed a solution based silver back electrode. the devices gave a reasonable current and a high voltage to begin with (Fig. 3.25) (Krebs et al., 2008). Fig. 3.25: IV characteristics of an as-prepared device on a glass substrate with an active area of 1 cm 2 . Test conditions were 1000 W m -2 , AM1.5G, 72 ± 2 0 C, 35 ± 5 % relative humidity, ambient atmosphere ( Krebs et al., 2008). Thambidurai et al. (2013), demonstrate solution-processed Ga-doped-ZnO ...
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... (P3MHOCT) that through a thermal treatment is converted to the insoluble form poly(3-carboxydithiophene) (P3CT) that generally gives stable polymer solar cells. The devices employed a solution based silver back electrode. the devices gave a reasonable current and a high voltage to begin with (Fig. 3.25) (Krebs et al., 2008). Fig. 3.25: IV characteristics of an as-prepared device on a glass substrate with an active area of 1 cm 2 . Test conditions were 1000 W m -2 , AM1.5G, 72 ± 2 0 C, 35 ± 5 % relative humidity, ambient atmosphere ( Krebs et al., 2008). Thambidurai et al. (2013), demonstrate solution-processed Ga-doped-ZnO incorporated as an interfacial electron ...
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... CdS layer thickness (Murugathas et al., 2019). The J-V characteristics of the solar cells fabricated with different CdS film thicknesses under simulated illumination of 100 mW/cm 2 (one sun) are shown in Fig. 3.26. Jack et al. (2011), demonstrated a novel approach, to fabricate silver nanoparticles for light trapping applications in silicon based solar cells. The nanoparticles have been synthesized using chemical reduction reaction. They reported that deposition of the silver nanoparticles on to a conventional bulk silicon solar cells shows ...
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... to two SILAR cycles, the best performance was achieved using the anode prepared with one SILAR cycle. An enhancement of 35.8 % was achieved when the thickness was around 16 nm (one SILAR) over the bare FTO device. When the size of AgNPs was around 32 nm (two SILAR), an enhancement of 10.4% was recorded over the reference device. It is shown from Fig. 3.27, that the mixed films containing Ag particles exhibit an increase in the power conversion efficiency from 10.4 to 35.8% (Danladi et al., 2016). ...
