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Schematics of the integration contour Γϵ around the crack tip, the far field contour Γ, and the region V surrounded by the difference contour S.
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During their applications, ferroelectric devices are subjected not only to electromechanical loading but also to thermal fields, inducing additional stresses and impairing their functionality. Additionally, internal heat generation can occur by the dissipation of the inelastic work resulting from ferroelectric hysteresis. Moreover, at extreme elect...
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Citations
... The capacity of ferroelectric materials to withstand continuous operation is crucial, particularly for applications that need long-term data retention and device dependability. According to studies, the cyclic switching necessary for device operation can cause a cumulative breakdown of ferroelectric characteristics, known as 'fatigue', which hurts the device's performance over time [13]. ...
Background: Ferroelectric materials, known for their spontaneous electric polarization, are reshaping the landscape of modern computing. These materials have unique qualities, such as non-volatility, high-speed operation, and energy efficiency, which are critical for advancing modern computer technology. Objective: This study intends to investigate integrating ferroelectric materials into current computer systems, emphasizing to improve memory devices and processors and solve the accompanying technological obstacles and possibilities. Methods: A thorough analysis of existing literature and experimental data was carried out to determine the capabilities and limitations of ferroelectric materials in computing applications. Key performance indicators examined include polarization retention, energy consumption, scalability, and integration with existing semiconductor technology. Results: The results show that ferroelectric materials considerably increase memory device performance and efficiency by allowing quicker write/read operations and lowering power use. However, concerns such as material deterioration, data retention, and integration complexity with silicon-based technology remain. Conclusion: Ferroelectric materials provide exciting prospects for the next generation of computer technology. While they provide significant gains in memory and processing power, addressing the technological obstacles is critical to their effective adoption into mainstream computer applications. Further research and development are needed to solve these issues and fully realize the promise of ferroelectric materials in improving computer performance.
