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... an ideal MOSFET, the transition of VDS and ID are instantaneous and results in no switching loss. However, the actual voltage and current transitions take finite time and results in significant switching losses in real MOSFETs as shown in Fig.6. The switching loss has two components; turn-on and turn-off loss. ...
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The wireless charging for electric vehicle is getting popular due to the absence of sophisticated cable connection and associated issues with the actuators in field for connected charging. The major challenges in inductive power transfer (IPT) systems are the control of the resonance converter and synchronisation in communications with the vehicle...
The charging of the rapidly growing fleet of Electric Vehicles (EV) requires some new solutions that will guarantee a better efficiency and widely spread universal chargers. Both in fast charging and in slow charging of the electric vehicle (EV) and hybrid electric vehicle (HEV), it can be proved that the wireless charger is the better choice. The...
Now a days, we are in situation to create pollution free environment. Per year _60%_ Percentage of pollution was created by vehicle Co2 emission in addition to that, the availability of petroleum product for upcoming years also create problem to our fast lifestyle. So, vehicle manufacture increasing their research and production of Electric vehicle...
The static wireless charging of electric vehicles is more convenient than traditional charging methods, but due to man-made parking will cause the coil to shift, which will cause the transmission power of the system to fluctuate and affect the stability of the system. Through the analysis of the traditional doublesided resonant system, it is found...
Citations
... [56]. The preference for Sic MOSFETs in wireless charging systems arises from their capacity to fulfill the high-frequency operating demands and power levels [57]. Exactly one semiconductor is activated in each leg during active operation, resulting in four possible states for the power converter operating under phase-shift control. ...
Electric Vehicles (EVs) play a crucial role in integrating renewable energy into the Smart Grid by functioning as both energy consumers and mobile energy storage systems. This dual role enhances grid flexibility, allowing EVs to support power balance during peak demand and store excess renewable energy during off-peak periods. To fully utilize this potential, EV chargers must support bidirectional power flow, enabling seamless energy exchange between the grid and vehicles. This capability extends to wireless charging systems, which are gaining popularity due to their convenience, safety, and efficiency. This paper comprehensively reviews the control strategies and power converter topologies employed in bidirectional wireless charging systems for Vehicle-to-Grid (V2G) applications. The study highlights key considerations: compensation network design, power factor correction, and system efficiency optimization. A detailed analysis of control algorithms managing active and reactive power is conducted using simulation models and experimental setups. The results demonstrate that advanced control strategies optimize power flow and enhance grid stability and reliability. Moreover, the paper discusses the practical challenges of wireless V2G systems, such as grid synchronization, coil misalignment, and communication delays between primary and secondary controllers. The findings underscore the importance of innovative control algorithms and compensation techniques in overcoming these challenges and ensuring efficient energy transfer. The study concludes that the successful implementation of advanced bidirectional wireless charging systems can significantly contribute to a more resilient and sustainable energy future, facilitating the seamless integration of renewable energy into the grid.
... Power losses in a SiC MOSFET are classified into conduction, switching, and leakage losses, with leakage losses being insignificant compared to conduction and switching losses [12] [13]. Conduction losses arise from the non-zero on-state drain-source voltage (V DS ), which can be estimated by multiplying the drain-source on-resistance (R ON ) by the drain-source current (I DS ). ...
Abstract—This paper compares the switching performance
of two state-of-the-art Silicon Carbide (SiC) Metal-
Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
utilising the Double Pulse Test method. The evaluation
focuses on assessing the impact of key parameters such
as total gate charge (Qg) and on-resistance (RON) on
the switching characteristics of the MOSFETs. Through
experimental investigation, the switching behaviours, including
turn-on and turn-off times, switching losses, and
body-diode reverse recovery characteristics (Qrr), are
analysed and compared between the two devices. The
results demonstrate that a SiC MOSFET with a lower
total gate charge and higher on-resistance exhibits superior
switching performance compared to a SiC MOSFET with a
higher total gate charge and lower on-resistance. The study
concludes that prioritising low total gate charge for faster
switching for pulsed power applications is more critical
than minimising conduction losses through a lower RON.
Index Terms—Silicon carbide MOSFET, Double Pulse
Test (DPT), Total gate charge (Qg), On-resistance RON,
Switching losses
... The load module was implemented according to the schematics shown in Figure 7 (linear load) or Figure 8 (non-linear load). The non-linear load in the model is represented by a two-phase diode bridge [49], a smoothing capacitor, and DC side load resistance [24,31,50,51]. Voltage and current meters in Figures 4-8 were used to measure corresponding voltage and current signals. ...
... load in the model is represented by a two-phase diode bridge [49], a smoothing capacitor, and DC side load resistance[24,31,50,51]. Voltage and current meters inFigures 4-8were used to measure corresponding voltage and current signals. ...
The increasing number of zero-emission vehicles on the roads demands novel vehicle charging solutions that ensure convenience, safety, increased charging infrastructure availability, and aesthetics. Wireless charging technology is seen as the one that could assure these desirable properties and could be applied not just in conventional implementations but also in off-grid solutions together with roadway energy harvesting systems. Both approaches require proper transfer of energy metering methods. In this paper, a method for measuring the power transferred to the load in a wireless charging system is presented, and its systematic error is assessed in the relevant range of influencing factors. The novelty of the method is that it does not require any metrologically certified measurement instrumentation on the receiver side of the wireless charging system. The error analysis is performed using a numerical simulation. Considered error-influencing factors included secondary side electrical load, coils’ coupling coefficient and quality factor, current and voltage quantization resolution, and compensation topology type (serial-serial (SS) and serial-parallel (SP)). It was determined that the systematic error of the power assessment does not exceed 0.7% for SS and 1.1% for SP topologies when the coupling coefficient is in the range of 0.05 to 0.4 and the quality factor of the resonant system is in the range of 100 to 800.
... Additionally, SiC MOSFETs are investigated for possible capacity for the wireless charging systems. Since SiC MOSFET has great switching capability, they are proper option for the wireless charging system that needs 85 kHz frequency in global standard [76]. The losses can be reduced up to 35% and the efficiency of the system can be increased with usage of the SiC MOSFET in the wireless charging systems [77]. ...
The reliability and performance of the power semiconductor devices are significantly critical, since the utilization of the power electronics in the field of renewable energy, electrical transportation applications. The performance of devices leads to unpredictable power losses, while their failure can cause extremely unfortunate faults in the power systems. Gallium Nitride (GaN) is one of wide bandgap materials that is advantageous, as it has low on-state resistance and internal capacitances. These features decreases the losses during switching and conduction, resulting in higher efficiency that can be a encouraging candidate for RF amplifiers or motor driving applications. Another wide bandgap material is Silicon Carbide (SiC) that is also improved the switching rates and it has thin voltage blocking layer lowering on state resistance of devices. However, SiC based MOSFET has a reliability concern regarding to the threshold voltage instability due to defects at the gate oxide layer. GaN based devices are commonly depletion mode devices due to the two dimensional gas layer at the hetero-interface in and these devices are used in cascode configuration to be used as enhancement mode.
The central research focus is related to comprehensive exploration and analysis of recently commercially available GaN and SiC power cascode devices. To understand dynamic performance of GaN and SiC cascode devices, the switching and 3rd performance of these devices are investigated with double pulse test circuit. The key result is that GaN cascode outperforms SiC cascode devices with smaller gate resistors in switching transients. Then, an analytical model is developed to observe the impact their parasitic capacitances on switching performance in cascode configuration. Following that, parasitic turn-on/off of cascode devices have been observed during switching and it is investigated with crosstalk test circuit. Later, a model is created to predict the possible impact of the stray inductance on switching of the cascode devices.
The threshold voltage instability is observed with biasing the terminals of cascode devices. The effect of the stress causes great drifts in threshold voltage of the discrete power cascode devices as well as power modules even with increasing temperature. The GaN cascode devices shows great drifts in their threshold voltages at high temperature after biasing gate terminal that could be related to defect density between the multiple layers of hetero-structure. Main output is GaN has threshold instability similar to SiC device after different stress conditions.
Next, as for the reliability of power cascodes, their avalanche ruggedness capability have been carried out with the single pulse unclamped inductive switching test. The 650 V GaN could only withstand a single avalanche ruggedness test condition while other counterpart are able to confront more avalanche energy. Later on, their short circuit capabilities have been evaluated with a single pulse. The results shows GaN has some avalanche energy even it is very small. The effects of temperature, DC-link voltage level and gate resistor on the short circuit capability of the power cascode devices are analyzed.
Lastly, to analyze the influence of thermal and electrical stress by power cycling test on power cascode devices have been studied and transfer characteristics, leakage currents and on-state resistance parameters have been observed after stressing cycles.
Open-Access Mandates: UK Engineering and Physical Sciences Research Council
Open Access Mandate: UKRI EPSRC - UK Research & Innovation
... The International Electrotechnical Commission (IEC) has set the global standard operating frequency for wireless EV chargers as 85 kHz [52]. Operating WPT at this frequency is 22% more efficient than at 22 kHz [53], which renders Si-IGBTs unsuitable for WPT because they cannot operate efficiently at that frequency. Researchers have also shown that SiC MOS-FETs can reduce the total loss of a WPT system by more than 35% compared with Si-based semiconductors [53]. ...
... Operating WPT at this frequency is 22% more efficient than at 22 kHz [53], which renders Si-IGBTs unsuitable for WPT because they cannot operate efficiently at that frequency. Researchers have also shown that SiC MOS-FETs can reduce the total loss of a WPT system by more than 35% compared with Si-based semiconductors [53]. The system efficiency can reach 95.6% with a 120-mm air gap [54]. ...
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and are considered the next evolutionary step for future electric drives. The application of SiC MOSFETs in the field of electrified vehicles has brought many benefits, such as higher efficiency, higher power density, and simplified cooling system, and can be seen as an enabler for high‐power fast battery charging. This article reviews the benefits of SiC MOSFETs in different electrified vehicle (EV) application scenarios, including traction inverters, on‐board converters, and off‐board charging applications. However, replacing Si‐IGBTs with SiC MOSFETs introduces several new technical challenges, such as stronger electromagnetic interference (EMI), reliability issues, potential electric machine insulation failure due to high transient voltages, and cooling difficulties. Compared to mature silicon‐based semiconductor technologies, these challenges have so far hindered the widespread adoption of SiC MOSFETs in automotive applications. To fully exploit the advantages of SiC MOSFETs in automotive applications and enhance their reliability, this paper explores future technology developments in SiC MOSFET module packaging and driver design, as well as novel electric machine drive strategies with higher switching frequencies, and optimized high‐frequency machine design.
... A new technique for charging electrical items was made possible by wireless power transfer. However, problems in wireless charging of EVs exist, including high-frequency power conversion converters, power pad design [232][233][234], electromagnetic field protection [235,236], metal object detection, and foreign object detection [237]. All of these are crucial to research and the creation of standards as in optimization [238] and structural field [239]. ...
Electric vehicles could be a significant aid in lowering greenhouse gas emissions. Even though extensive study has been done on the features and traits of electric vehicles and the nature of their charging infrastructure, network modeling for electric vehicle manufacturing has been limited and unchanging. The necessity of wireless electric vehicle charging, based on magnetic resonance coupling, drove the primary aims for this review work. Herein, we examined the basic theoretical framework for wireless power transmission systems for EV charging and performed a software-in-the-loop analysis, in addition to carrying out a performance analysis of an EV charging system based on magnetic resonance. This study also covered power pad designs and created workable remedies for the following issues: (i) how power pad positioning affected the function of wireless charging systems and (ii) how to develop strategies to keep power efficiency at its highest level. Moreover, safety features of wireless charging systems, owing to interruption from foreign objects and/or living objects, were analyzed, and solutions were proposed to ensure such systems would operate as safely and optimally as possible.
... Various organizations are developed a 50-kW inductive power transfer charging system [79], [80]. A researcher, Roman boss demanding from SFIT, Zurich, developed a 50-kW charging pad [80] and analyzed the different charging pad structures [81] and semiconductor switches [82]. ...
... Then the modified 3 Φ, LCC-LCC compensation method was discussed by ORNL with Non-Zero coupling in the interphase system [85]. Additionally, the researchers allowed 22 kHz and 85 kHz frequencies in a 50-kW system and analyzed them [79]. The proper shield for a 50-kW system was designed and analyzed by ORNL [86]. ...
Green electricity and green transportation are the primary requirements for smart cities. Maximizing the EV utilization is the key requirement in the development of green transportation. However, the EV technology faces challenges due to the long battery recharging time and heavy batteries to achieve extended driving ranges. Different approaches are investigated to charge the EV by battery swapping, plugin or wireless. Recently the wireless charging approach is gaining popularity because of safety, extended driving range, dynamic charging and human intervention free recharging. However, multiple factors need to considered in the design of WPT system and requires expertise in different domains. This paper discusses a systematic approach on the various parameters involved in a dynamic wireless charging system design. The major functional units in WPT such as charging couplers, compensation network, and power inverters topologies are addressed. Additionally, this paper discusses the issues involved in grid-tied and renewable integrated dynamic charging systems. Moreover, the step by step procesdure is described to understand the process involved in the dynamic charging system design. Finally, various case studies at different power levels are presented to get more insights into practical design.
... Therefore, increased resonant frequency reduces winding loss, core loss, and shield loss. The cost for high frequency is increased power device switching loss [5]. SiC MOSFET in the market's 600 V~1700 V voltage range opens the opportunity to implement high resonant frequency for EV wireless charging systems. ...
... The intrinsic fast diode in SIC MOSFET has a much lower reverse recovery charge (Qrr) (low switching-off loss). SIC MOSFET is an ideal choice for wireless charging DC/DC resonant converter, which runs at hard-switching control with acceptable power device loss in low current at CV battery charging mode [5]. The switching loss of Sic MOSFET is estimated to reduce to around 50% with ZVS switching. ...
... Substituting (1) into (3), the averaged inverter DC input current can be calculated from (4). If the resonant compensation circuit is designed to operate the inverter at ZPA condition with ϕ(PF) inv = 0, the relationship of the inverter averaged DC input current and its AC output current is simplified as (5). ...
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The proposed triple phase shift (TPS) dual active bridge (DAB) resonant converter control scheme is suitable for high-efficiency electrical vehicle (EV) wireless charging applications.
Abstract
This paper presents a new triple phase shift (TPS) closed-loop control scheme of a dual active bridge (DAB) LCC resonant DC/DC converter to improve wireless charging power transfer efficiency. The primary side inverter phase shift angle regulates the battery charging current/voltage. The secondary side rectifier phase shift angle regulates the rectifier AC load resistance to match its optimized setting. The inverter-to-rectifier phase shift angle is set to achieve unity power factor operation of the DAB rectifier and inverter. The mathematical formulation of the TPS shift control is given for each phase shift angle. The analytical calculation, circuit simulation, and experimental test are carried out in a power scaled-down DAB LCC resonant wireless charging converter laboratory hardware setup to validate the proposed TPS close-loop control scheme. The PLECS circuit simulation shows that DAB LCC resonant SiC MOSFET operates at zero-voltage-switching (ZVS) with a unity power factor in emulated constant current (CC) mode battery charging. In constant voltage (CV) mode operation, one inverter/rectifier Leg does not operate at ZVS switching when Sic MOSFET is switched on near zero current. The experimental results show that the efficiency is greatly improved for CV mode charging with large DC load resistance connected if rectifier AC load resistance matching control is enabled. The measured efficiency matches well with the analytical calculation. The estimated efficiency improvement will be much more significant for EV applications in the kW power range with greater winding loss. The challenges and possible solutions to implement TPS PWM modulation in two separate inverter and rectifier control hardware are explained for future TPS control algorithm development in practical wireless charging products.
... In [31], the authors have investigated static modeling to improve system efficiency of 22 kHz and 85 kHz 50 kW wireless charging system for EV; this model has relied on the mutual inductance related to primary and secondary coils, it was verified only for the case of superimposing of the receiver and transmitter coils. In [32], the authors have studied the dynamic situation, where they try to explain the relationship between the receiver and the transmitter coils position deviation. ...
Usually, electric vehicle systems are based on various modules that should ensure the high power and stability of the vehicle on the track. The majority of these components are linked to the charging mechanism. In this regard, dynamic wireless power transfer is a practical method to solve electric vehicle range anxiety and reduce the cost of onboard batteries. Wireless recharging has long been common with pure electric vehicles and is designed to allow charging even when the vehicle is in motion. However, it is difficult to analyze this method since its operating philosophy is complex, particularly with the existence of several variables and parameters. Also, the state of the vehicle, whether it is in motion or not, defines several parameters such as the vehicle speed as well as the sizes and dimensions of the coil receivers. This paper presents a novel method to improve the performance of the dynamic wireless recharge system. In the proposed system, receiver coils have been added to maximize charging power by offering a dynamic mathematical model that can describe and measure source-to-vehicle power transmission even though it is in motion. In the proposed mathematical model, all physical parameters describing the model were presented and discussed. The results showed the effectiveness of the proposed model. Also, the experimental tests confirmed the validity of the simulation results obtained by providing two coil receivers under the vehicle. Ó 2021 The Authors. Production and hosting by Elsevier B.V. on behalf of Ain Shams University. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
... Please note that SiC MOSFETs devices includes intrinsic body diodes, which eliminates the need of using anti-parallel diodes for current freewheeling [55], although SiC Schottky diodes are usually included to improve the performance [56]. SiC MOSFETs are usually employed in wireless chargers to comply with the requirements of the operational frequency and the power levels [57]. When actively operated, only one semiconductor in each leg is activated, being four, the potential states of the power converter in a phase-shifting control. ...
Due to their flexibility, Electric Vehicles (EVs) constitute an important asset for the integration of renewable energy sources in the Smart Grid. In particular, they should have a dual role: as a controllable load and as a mobile generator with a low inertia. To perform these tasks, chargers must provide the electronics with a power flow from the grid to the vehicle and vice versa. This bidirectionality can also be implemented in wireless chargers. The power converters, the compensation networks and the coil misalignment must be considered when designing the control of these systems. This paper presents a review about the proposed algorithms to control the active and the reactive power flow in a bidirectional wireless charger.
