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VG vs. time for 0.0729 cm 2 n-type MOScaps during 1 second pulses of forced gate current stress IG=1 mA/cm 2 at T=150 o C

VG vs. time for 0.0729 cm 2 n-type MOScaps during 1 second pulses of forced gate current stress IG=1 mA/cm 2 at T=150 o C

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Fig. 1. QBD measured for SiC MOSCAPs (28 pcs), 1200 V 40 mΩ SiC MOSFETs...
Fig. 2. VG vs. time for 0.0729 cm 2 n-type MOScaps during 1 second...
Fig. 5. VTH vs. time during stress with VGS=28 V at T=150 o C for two...
Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology
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  • May 2022
Similar charge to failure distributions with mean values of about 50 C/cm ² were measured for planar SiC MOSFETs and MOS capacitors. Fast occurring and saturating negative flatband and threshold voltage drops were found in time resolved 1 second long pulsed gate current stress with I G =1 mA/cm ² at T=150 °C. No substantial difference in V TH drift...
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