Figure 6. Evolution of the contact resistivity computed for a doping concentration of 1 × 10 21 |e|/cm 3 using the formalism developed in Reference 3 for the electron transport effective mass of bulk Si along the [100] (0.23 m e-light gray circles) and [111] directions (0.41 m e-open circles) 21 and for a 2nm diameter [111] nanowire (0.53 me-black circles). 21 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 139.81.183.231 Downloaded on 2018-05-25 to IP 

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Evolution of the contact resistivity computed for a doping concentration of 1 × 10 21 |e|/cm 3 using the formalism developed in Reference 3 for the electron transport effective mass of bulk Si along the [100] (0.23 m e-light gray circles) and [111] directions (0.41 m e-open circles) 21 and for a 2nm diameter [111] nanowire (0.53 me-black circles). 21 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 139.81.183.231 Downloaded on 2018-05-25 to IP 
Schematic illustration of one of the four n-Si(100)|aTiSi models used in this study. The Si and Ti atoms are colored in yellow and gray, respectively. 
(a) Current versus voltage evolution computed for the energetically most stable n-Si(100)|aTiSi models using a Si n-type doping concentration of 10 20 |e|/cm 3. The dash-dotted line shows the...
(a) Evolution of the contact resistance with respect to the doping concentration for four different n-Si(100)|aTiSi interface models. The gray triangle and red stars correspond to the values...
(a) Fermi surfaces (at 300K) of copper and ruthenium. The surfaces are colored with respect their direction dependent electron effective masses. (b) Evolution of the averaged effective masses...
(a) Evolution of the transmission probability computed for different metals with respect to the conduction band energy of silicon within the formalism developed by Baraskar et al. 3 Note that the...
Evolution of the contact resistivity computed for a doping concentration of 1 × 10 21 |e|/cm 3 using the formalism developed in Reference 3 for the electron transport effective mass of bulk Si...
Evolution of the contact resistivity computed for a doping concentration of 6 × 10 13 |e|/cm 2 using the step barrier formalism of Reference 3. An effective mass of 0.526 m 0 (black circles),...
Transmission probability (Eq. 1) computed for two extreme cases: a) Low effective mass semiconductor (m s = 0.041) in contact with a low effective mass metal (m m = 0.73-W) (black line) and a high...
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