Figure 7. Computed direct (filled triangles) and indirect (filled diamonds) energy band gaps of the germanene/(0001) ZnSe slab model, as a function of the external electric field applied to the system.  

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Computed direct (filled triangles) and indirect (filled diamonds) energy band gaps of the germanene/(0001) ZnSe slab model, as a function of the external electric field applied to the system.  
Three different atomic arrangements of the silicene layer on top of MoS2. Blue, yellow and green spheres are Si, S and Mo atoms, respectively.  
(a) Relaxed atomic configuration of silicene on bulk MoS2 (side view). In (b) the STM image (VB=0.2V, IS=2nA) of a partially covered MoS2 surface by Si atoms is shown (right side). A line profile...
Energy band structure and local density of states (LDOS) of the silicene/MoS2 structure. The LDOS shows that the density of states of the MoS2 substrate still preserve a gap very close to that of...
Side view (a) and top view (b) of the relaxed germanene/(0001) ZnSe slab model. Yellow, gray and blue spheres are Se, Zn and Ge atoms, respectively.  
Computed energy band structure of the germanene/(0001) ZnSe slab model, without (solid blue lines) and with (dashed red lines) an external electric field of 0.6 V/ ? in the direction perpendicular...
Computed direct (filled triangles) and indirect (filled diamonds) energy band gaps of the germanene/(0001) ZnSe slab model, as a function of the external electric field applied to the system.  
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