Figure - available from: Journal of Computational Electronics
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![Comparison between the simulated and the experimental trench after the 94s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$94\,s$$\end{document} etch procedure and polymer removal. We are able to accurately reproduce CDs within 5%\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$5\,\%$$\end{document} of the experimental results. Micrography reprinted with permission from [12]. Copyright 2021, American Vacuum Society](publication/372393110/figure/fig4/AS:11431281197677765@1697076853301/Comparison-between-the-simulated-and-the-experimental-trench-after-the.png)
Comparison between the simulated and the experimental trench after the 94s\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$94\,s$$\end{document} etch procedure and polymer removal. We are able to accurately reproduce CDs within 5%\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$5\,\%$$\end{document} of the experimental results. Micrography reprinted with permission from [12]. Copyright 2021, American Vacuum Society
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![Plane wafer rate of SiO2\documentclass[12pt]{minimal}...](publication/372393110/figure/fig3/AS:11431281197752969@1697076853201/Plane-wafer-rate-of-SiO2documentclass12ptminimal-usepackageamsmath_Q320.jpg)
Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic random access memory devices. However, the development of etching technology is challenged by the lack of understanding of complex surface reaction mechanisms and by the intricacy of etchant fl...
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