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COMPARISON

COMPARISON

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TABLE 1 GPS/GALILEO/GLONASS L1/E1 FRONT-END SPECS
TABLE 2 SOME SUPPORTED TCXO AND DIVIDER VALUES
TABLE 3 GLONASS/B1I IF FILTER DESIGN PARAMETERS
TABLE 4 P1DB COMPRESSION POINT
TABLE 5 COMPARISON
A CMOS 65nm RF Front-End for L1/E1 GPS/Galileo/GLONASS/BeiDou2 Signals - 通吃各類衛星 65奈米CMOS射頻前端定位更準
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  • Aug 2015
This paper presents a low-power RF front-end designed for GNSS signals in L1 band, implemented on 65nm CMOS technology. In GNSS mode, it draws about 19mA (14.5mA in GPS/Galileo mode) on external voltage supply at 1.2V, with power consumption of roughly 23mW. The device integrates a two-stage high performance low noise amplifier (LNA), an automatic...
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... have chosen this high input level to bring out the carrier from the divider noise contribution. Lastly, a comparison with our previous chip in [4] and other commercial L1 GPS/Galileo/GLONASS RF Front Ends using their available datasheets and application notes ( [16], [18], [19], and [20]) is provided in Table 5. With respect to our previous chip, this RF presents lower IR in GLONASS chain mainly due to different approach of the IF filter; but it maintains constant value over the GLONASS bandwidth and a greater phase noise (but we are addressing this aspect for new silicon cut) compensated by lower power and area consumption. ...