Figure - available from: Microwave and Optical Technology Letters
This content is subject to copyright. Terms and conditions apply.
(A) Top view of assembly diode, anodes are named from top to bottom: anode 1–6. (B) Material setting for each part, the material layers of the diode are shown from top to bottom: Anode and pad, SiO2, Epi layer, buffer layer, and substrate.

(A) Top view of assembly diode, anodes are named from top to bottom: anode 1–6. (B) Material setting for each part, the material layers of the diode are shown from top to bottom: Anode and pad, SiO2, Epi layer, buffer layer, and substrate.

Source publication
Article
Full-text available
This paper proposed an accurate series resistance model tailored for Schottky diode‐based terahertz multipliers. Compared to the conventional electrothermal model (E‐T model) only considering thermal effects, this model comprehensively accounts for both thermal and frequency effects of the series resistor components, including the temperature‐depen...

Similar publications

Preprint
Full-text available
In order to study the thermal deformation behavior of uranium-50wt.%zirconium, used Gleeble 3800 thermal simulation testing machine to carry out compression deformation experiments at different temperatures for this material. The effects of deformation temperature and strain rate on the alloy were studied. The results show that the peak stress of U...