Nanoelectronics

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22 Is there any simple and safe procedure to mix a nanoparticle with a polymer?
By Jumril Yunas · National University of Malaysia

Parisa Daraei · Razi University

dispersion of NPs in polymer matrix is critically depended on NPs and polymer type. which kind of magnetic NPs you are planning to use? if they are hy... [more]

dispersion of NPs in polymer matrix is critically depended on NPs and polymer type. which kind of magnetic NPs you are planning to use? if they are hydrophilic then the dispersion in a hydrophobic matrix needs an adequate ultrasonication exactly before solidification of polymer. If they are hydrophobic as the polymer, a long time mechanical agitation would be useful. however, your question needs more details to receive a good answer.

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Question:
New Empirical Tight-Binding Method vs. Empirical Pseudopotentials Method: Pros and cons?
In your experience which one is better in terms of ease of programming and computational efficiency: TBM or EPM?

In your experience which one is better in terms of ease of programming and computational efficiency: TBM or EPM?

By Boris Vulović · University of California, Los Angeles

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Answer added to:
9 How to measure the tunneling current?
By Ajaya Kavala · Indian Institute of Technology Patna

Kai Fauth · Universität Würzburg

Dear Charles, (i) it appears as if he wanted to calculate that current (->in theory) (ii) it appears as if he imagines a circuitry where the electros... [more]

Dear Charles, (i) it appears as if he wanted to calculate that current (->in theory) (ii) it appears as if he imagines a circuitry where the electrostatic potential of the particles is controlled via gate voltages (semiconductor structure) (iii) I am not sure whether he is aware that for the current to flow steadily, he will need two additional leads providing (tunneling) contact to each of the particles. That makes for a neat complicated setup to calculate Edit1: One additional remark: if such a device was experimentally possible it would of cours be possible to search for resonant tunneling conditions, which would be nice to see. Edit2: @ A.K., you haven't quite reacted to the questions, remarks and recommendations raised in previous posts. It is very difficult to enter into a fruitful discussion then. Your readers (like myself) are then forced to speculate about your intentions and ideas and may rapidly loose interest in doing so.

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Question:
New What is the easiest method to grow CNT on Si substrate for the fabrication of photon detector?
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By Syed Khasim · PES Institute of Technology

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1 Which UNIX command opens the DECKBUILD environment for SILVACO?
By Prachi Sharma · Birla Institute of Technology and Science Pilani

Ajaya Kavala · Indian Institute of Technology Patna

I think some installation problem is there in your system otherwise you have to instal the software in REDHAT-5 only

I think some installation problem is there in your system otherwise you have to instal the software in REDHAT-5 only

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4 Transport properties of electrons
By Parikshit Sahatiya · SRM University

Parikshit Sahatiya · SRM University

@ Chris: Not tunnel effect....its calculating tunneling time and other parameters like decay time etc..while electron transport through potential barr... [more]

@ Chris: Not tunnel effect....its calculating tunneling time and other parameters like decay time etc..while electron transport through potential barrier, double potential barrier, quantum dots etc...

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22 Why are the source drain and gate current the same in organic transistors?
By Mir Waqas Alam · University of Toyama

Abdelhalim Zekry · Ain Shams University

Dear Anup, Thank you for your comment. It motivated me to add more details to my previous comment.

Dear Anup, Thank you for your comment. It motivated me to add more details to my previous comment.

Following
Question:
Open Which kinds of materials or constructures of mosfet have the lowest input referred noise?
Which kinds of materials or constructures of mosfet have the lowest input referred noise, and is easy to be fabricated using CMOS technology?

Which kinds of materials or constructures of mosfet have the lowest input referred noise, and is easy to be fabricated using CMOS technology?

By Jing Li · Forschungszentrum Jülich

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2 Which tool is sufficient for designing and complete analysis for a Single Electron Transistor?
By Vikash Sharma · ABV-Indian Institute of Information Technology and Management Gwalior

Vikash Sharma · ABV-Indian Institute of Information Technology and Management Gwalior

Thanks sir..

Thanks sir..

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5 NEMS or Nano-MEMS, which one is the most suitable name to call this subject ?
By Jumril Yunas · National University of Malaysia

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5 Has anybody got a feel for how the electric field in an electrolyte varies with liquid thickness?
By James Cooke · JDS Uniphase Corporation

James Cooke · JDS Uniphase Corporation

My electrolyte is Li-Cl (nearly saturated aqueous solution), the two liquid capacitor "plates" are bounded by an oring of 4"ID. Dielectric substrate ... [more]

My electrolyte is Li-Cl (nearly saturated aqueous solution), the two liquid capacitor "plates" are bounded by an oring of 4"ID. Dielectric substrate is 0.7mm thick.

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6 Can someone tell me from which chemical company can I purchase the items mentioned below
By hari krishna sv · Nanyang Technological University

hari krishna sv · Nanyang Technological University

Thank u all for the responses.!

Thank u all for the responses.!

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3 What should be the criteria for the choice of the Si-substrate (p-type or n-type, resistivity)while preparing for the fabrication of a device?
By Dinesh Dixit · Indian Institute of Technology Bombay

Dinesh Dixit · Indian Institute of Technology Bombay

Thank you so much sir for such a useful information.

Thank you so much sir for such a useful information.

Following
Question:
Open is there any way/reference to know the diffusion coefficient of Sn, SnO2 and SiO2 materials?
I am trying to study the diffusion mechanism of Sn , SnO2 and SiO2 while Li ion diffuses into these materials. I need to solve the governing PDE analy... [more]

I am trying to study the diffusion mechanism of Sn , SnO2 and SiO2 while Li ion diffuses into these materials. I need to solve the governing PDE analytically. For this, I should know the values of diffusion coefficients of each materials. Could anyone help me in this regard?

By Nadeem Qaiser · Korea Advanced Institute of Science and Technology

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5 Failed to expose pattern on quartz chip with ITO on top by using 100keV and ZEP520A (1000Am) . What is the reason for this?
By Nelson Li · The Hong Kong University of Science and Technology

Nelson Li · The Hong Kong University of Science and Technology

Piramanayagam, thanks so much for your information. However, experiment result still fail even the gap in between sqr. reduce to 20nm......disappointe... [more]

Piramanayagam, thanks so much for your information. However, experiment result still fail even the gap in between sqr. reduce to 20nm......disappointed!

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Answer added to:
3 Could anyone explain Bipolar and Unipolar characteristic in RRAM devices?
By Firman Mangasa · National Chiao Tung University

Abhay Sagade · AMO GmbH

see this paper: https://www.researchgate.net/file.PostFileLoader.html?id=5167b180d3df3e203e000001&key=504635167b18072e05

see this paper: https://www.researchgate.net/file.PostFileLoader.html?id=5167b180d3df3e203e000001&key=504635167b18072e05

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Answer added to:
1 What is the definition of turn-on field in the case of field emission from graphene samples?
By Sanjay Behura · GERMI Research, Innovation and Incubation Center

Amit Morarka · University of Pune

The turn ON field would be something analogous to work function. At a certain field strength, the electron emission begins. For any nano-structure of ... [more]

The turn ON field would be something analogous to work function. At a certain field strength, the electron emission begins. For any nano-structure of a material, the field strength would be lower for the field emission as compare to the filed strength required to start the field emission in its bulk form due to but obvious size effect. As it happens in thermionic emission, the energy required to just pull out an electron from the metal and into the immediate vacuum. We can on the similar lines can generalized this definition for the field emission from the graphene samples. Kindly someone correct the above explanation.

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3 Can you list one or more devices used for resistive memories? Mentioning memory type: volatile or nonvolatile?
By Mohamed Mohamed · Chungbuk National University

Abhay Sagade · AMO GmbH

This article also might be of your interest.

This article also might be of your interest.

unifying description of memory materials.PDF ×

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4 Why aren't single-electron devices widely used?
By Mohamed Mohamed · Chungbuk National University

Mohamed Mohamed · Chungbuk National University

Thanks so much for great answers

Thanks so much for great answers

Following
Question:
Open I am working on 65nmm FGMOS. If n+ conc. protrudes beyond pn junction is it a problem? What n+ conc should there be for effective channel length @65nm?
Gate length=100nm for FN tunneling programming and erasing.

Gate length=100nm for FN tunneling programming and erasing.

By Ankur Shukla · Sardar Vallabhbhai National Institute of Technology

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Question:
Open What is the difference between Random Dopant Distribution and Random Discrete Dopants? (RDD is one of the main sources of process variation in CMOS)
Process Variation issues for CMOS

Process Variation issues for CMOS

By Amirali Amirsoleimani · Razi University

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4 What are the "current" components with metal/oxide/metal junctions? Is there only tunneling current?
By Mohamed Mohamed · Chungbuk National University

Mohamed Mohamed · Chungbuk National University

Thanks so much. I have not seen this paper before

Thanks so much. I have not seen this paper before

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2 Does the permittivity of oxide materials in metal/oxide/metal junctions vary with applied electric field or tunnelling current?
By Mohamed Mohamed · Chungbuk National University

Mohamed Mohamed · Chungbuk National University

I have read these papers and I haven't got any information about permittivity, however they are very useful. Thank you so much

I have read these papers and I haven't got any information about permittivity, however they are very useful. Thank you so much

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16 What is the Miller effect? How does it work and how does it affect the character of a CMOS gate?
By Dotrung Kien · Hanoi University of Science and Technology

Cyril Mechkov · Technical University of Sofia

Very interesting remedies for eliminating the Miller effect have you shown here, Abdelhalim! I would like to say some words about each of them. The f... [more]

Very interesting remedies for eliminating the Miller effect have you shown here, Abdelhalim! I would like to say some words about each of them. The first is the straightforward circuit designer's solution that is not so interesting to me as there is no clever circuit trick there. The second is the clever cascode circuit solution (mentioned by Mohamed as well). It is extremely interesting for me and I suggest to ask a special question about the basic idea behind it. It is not so important but I would like to know why "the voltage gain Av of the common source amplifier is decreased to one". IMHO if we consider the gain is ΔVd/ΔVg, then it would be zero as Vd stays constant. Or I am wrong? The next solution (you have not numbered it) has been also extremely interesting for me since, as Lutz has noted, it is the ubiquitous differential pair used as a single-ended amplifier here (like ECL logic gates). Of course, it deserves a special question as well. I will only note that, in this case, it is more frequently implemented by two complementary transistors. This solution was widely used by the circuit genius Widlar when creating the exotic input differential stages of the pioneer LM301op-amp; then - by Fullagar when creating the legendary 741 (another idea for future questions). I have no idea about the third method but the final (the fourth) is very interesting to me as it resembles the Wien bridge oscillator (the negative and positive feedback are mutually neutralized). Regards, Cyril.

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1 Nano inductor
By ai Haibara · Universiti Malaysia Perlis

John Muth · North Carolina State University

What do you mean by nano in your question? If you mean to fabricate an inductor on a chip, most of those structures are closely spaced spirals. Someti... [more]

What do you mean by nano in your question? If you mean to fabricate an inductor on a chip, most of those structures are closely spaced spirals. Sometime to make it more coil like there is a bulk micro-machining step so the coil can extend into the third dimension. You would draw the structure like any other interconnect line in Sentarus or other layout software. The main issues are with fabrication. i.e. how closely the coils can be placed together, and what the resistance of the coil is since the wire are typically on the micron size scale.

Following
Question:
Open How do I calibrate my DG-MOSFET in the device simulator?
Threshold voltage.

Threshold voltage.

By Sushanta Mohapatra · National Institute of Technology Rourkela

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Answer added to:
4 How to introduce self defined model or equations in synopsys Sentaurus TCAD?
By Debaleen Biswas · Saha Institute of Nuclear Physics

Deleted

Custom materials in Sentaurus are a major and non-intuitive ordeal. Start by reading the manual (if you don't have it, contact synopsis or it should b... [more]

Custom materials in Sentaurus are a major and non-intuitive ordeal. Start by reading the manual (if you don't have it, contact synopsis or it should be in the software help section). Basically, you need to copy the Si files and modify the content and their names. Then you need to get a separate Datatex file to define all the new materials you want to use, put this file into the project folder. In the code for Seditor and Sdevice, you have to use the new material names, and also make sure to "include" the new parameter files. I can't go into details here because it would take for me forever to type out, but try reading the manual, it should help you along with some hints that I've given here.

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2 Is there any realization of memcapacitor or meminductor devices?
By Mohamed Mohamed · Chungbuk National University

Mohamed Mohamed · Chungbuk National University

Thank you so much. I will read this paper

Thank you so much. I will read this paper

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1 Im currently looking for anti-hcg antibody for my biochip research, can anyone suggest the type and characteristics that need to be consider ?
By Sharma Rao Balakrishnan · Universiti Malaysia Perlis

Arunas Ramanavicius · Vilnius University

Just compare with some other immunosensors, e.g.

Just compare with some other immunosensors, e.g.

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Answer added to:
12 Nanoelectronic and nanophotonic devices simulation softwares
By Abolfazl Mohamadi · Max Planck Institute for Astrophysics

Mohamed Atef · Assiut University

Check this old post for a similar question: https://www.researchgate.net/post/Which_is_the_best_optoelectronic_device_simulation_program

Check this old post for a similar question: https://www.researchgate.net/post/Which_is_the_best_optoelectronic_device_simulation_program

Following

About Nanoelectronics

Nanoelectronics refer to the use of nanotechnology on electronic components, especially transistors. Although the term nanotechnology is generally defined as utilizing technology less than 100 nm in size, nanoelectronics often refer to transistor devices that are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Technologies include hybrid molecular/semiconductor electronics, one dimensional nanotubes/nanowires, or advanced molecular electronics.

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Nanoelectronics

About Nanoelectronics

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