Gallium Nitride (GaN) Epilayers and LEDs

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2 How to convolute a time-resolved PL spectra with instrument response function or laser pulse?
By Yashpal Katharria · Chonbuk National University

Yashpal Katharria · Chonbuk National University

Thanks Joachim.. Well, I also think that it should be de-convolution but the literature usually refers it as convolution. I obtained IRF using sapphi... [more]

Thanks Joachim.. Well, I also think that it should be de-convolution but the literature usually refers it as convolution. I obtained IRF using sapphire as the scatterer..don't know if there is a better way..

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4 Electron affinity error question
By Muhammad Owais Tariq · NUST College of Electrical & Mechanical Engineering

Kanad Mallik · University of Oxford

Hello Muhammad Owais Tariq, From your statement it appears that you used the value of electron affinity of GaN from the default parameters file of ATL... [more]

Hello Muhammad Owais Tariq, From your statement it appears that you used the value of electron affinity of GaN from the default parameters file of ATLAS in your 'hand theoretical calculations' and you are not happy with your results involving amorphous silicon. Well, if so, this is not an ATLAS problem. Anyway, you are right that GaN should not have different values in different places.

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12 Is there a way to electrically (or optically) measure the degree of compensation in p-type GaN doped with magnesium?
By Greg Togtema · Lakehead University Thunder Bay Campus

Yuriy Gnatenko · National Academy of Sciences of Ukraine

You would like to know about the degree of compensation GaN doped by Mg atoms, which you studied. This information can be obtained by the measuremen... [more]

You would like to know about the degree of compensation GaN doped by Mg atoms, which you studied. This information can be obtained by the measurement of photoluminescence spectra. The blue Mg induced 2.8 eV photoluminescence band is caused by the donor–acceptor (D–A) pair recombination with the participation of the MgGa (Mg at Ga site) – VN (vacancy N) acceptor. These centers are responsible for the self-compensation in GaN doped Mg. Therefore the intensity of this band may be the measure of the self-compensation in the investigated samples. You can compare different samples. However, you suggest that your samples is very insensitive. On the one hand this may be due to the fact that you are using the wrong source of photoluminescence excitation. On the other hand, there may be a poor optical quality of the samples. Why fash? It is necessary to optimize the technology of materials in order to obtain of sufficiently good optical quality samples.

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1 What is the role of silicon trinitride (Si3N4) in the formation of crystallographic orientation GaN nanowires on a Si(111) substrate?
By Vasyl Kladko · National Academy of Sciences of Ukraine

Quentin Diduck · Institute of Electrical and Electronics Engineers

I am not sure if this completely answers your question, but generally silicon nitride is thought to provide passivation of the surface states of GaN. ... [more]

I am not sure if this completely answers your question, but generally silicon nitride is thought to provide passivation of the surface states of GaN. This prevents surface depletion effects and thus in the case of nano-wires, would allow them to function as more of a semiconductor than an insulator.

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3 Why Si make GaN an n-type material ?
By Muhammad Owais Tariq · NUST College of Electrical & Mechanical Engineering

Yuriy Gnatenko · National Academy of Sciences of Ukraine

In addition to above mentioned comments I would like to note that the ionic radii of Ga and Si elements are much closer than that for Si and N. Theref... [more]

In addition to above mentioned comments I would like to note that the ionic radii of Ga and Si elements are much closer than that for Si and N. Therefore, more probable is the substitution of gallium by silicon, that is a donor impurity for GaN. As a result of this GaN : Si became n- type.Of course, can also form complex defects. However, this question requires careful examination.

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3 I am interested to know about wet etching with GaN
By Ata Khalid · University of Glasgow

Dhamodaran Santhanagopalan · University of California, San Diego

Hi, I second Quentin's suggestion, In the past I have tried the procedure he has mentioned for Ga-face layers on Sapphire with good success. I dont ex... [more]

Hi, I second Quentin's suggestion, In the past I have tried the procedure he has mentioned for Ga-face layers on Sapphire with good success. I dont exactly remember what I used for N-face, but I remember following one review article for N-face. But it depends on why you want to use wet-etching.

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Open What is the recommended simulator to simulate red break LED lights fixed on a vehicle, in terms of F.O.V, the power intensity range .. etc?
In terms of F.O.V, the power intensity and the detectablility range and where could I find the specifications of the vehicles commercial LED lights.

In terms of F.O.V, the power intensity and the detectablility range and where could I find the specifications of the vehicles commercial LED lights.

By Mohammad Abualhoul · Lund University

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1 Is anyone working in gallium nitride mosfet in devices?
By Nandhakumar Subramani · Anna University, Chennai

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About Gallium Nitride (GaN) Epilayers and LEDs

The scope of this topic encompasses (but is not limited to) the fabrication of GaN epilayers on various substrates, defect and strain engineering, production of GaN based promising nanostructures, and the growth of GaN/InGaN based LEDs.

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Emre Sari

Bilkent University
Tanamy Tec

Princess Nora bint Abdul Rahman University
Lyashenko Oleg

National Taras Shevchenko University of Kyiv
Mark-Antonius Rothe

Technische Universität Berlin
Shivesh Yadav

Indian Institute of Technology Bombay
Yun-Hsiang Wang

National University of Singapore
Jae-Eung Oh

Hanyang University
Alwiyah Kuddah

Airlangga University
Peifen Zhu

Lehigh University
Shu Kong Ki

The University of Manchester

Gallium Nitride (GaN) Epilayers and LEDs

About Gallium Nitride (GaN) Epilayers and LEDs

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