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ABSTRACT: Printed electronics are of highly interested in recently years for its flexible and low cost. Extensive results on the transistor, light-emitting diode, memory and diode were reported. However, rare works on the integration of those components into an electronic system and the architecture for the system are discussed. In this article, we discussed the design and performance of transistor, memory and diode based on the integrated process consideration and the system architecture for a printed RFID
VLSI Technology, Systems, and Applications, 2006 International Symposium on; 05/2006
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ABSTRACT: Heterojunction phototransistors (HPTs) are requested to have high electrical bandwidth (∼1 GHz ) performance for their application of high-speed digital fiber communication. In this letter, a method is disclosed to enhance the speed performance of Si / SiGe -based HPTs, which can overcome the low quantum efficiency drawback (∼0.1 A / W ) of Si -based high-speed photodetectors at the wavelength of 850 nm due to its large internal gain. By use of the substrate terminal of HPT, the speed performance can be enhanced greatly with much less reduction in optical gain as compared to the traditional technique with base-terminal-bias. Under proper optical power excitation and the common ground of substrate and emitter terminals, we can achieve 1.8 GHz fast-Fourier-transformed electrical bandwidth with 0.7 A / W responsivity simultaneously. The demonstrated device structure can serve as a key component in the short-reach fiber communication system.
Applied Physics Letters 11/2004; · 3.84 Impact Factor
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ABSTRACT: In this letter, we create a path to remove excess carriers in the base region of a SiGe phototransistor (HPT) by introducing the trap centers. The behavior of the trap centers in the SiGe heterojunction bipolar transistor (HBT) is a form of nonideal (nkT) base current. The responsivity of the device is ∼0.43 A/W with fully SiGe HBT-compatible device structure to facilitate the integration of the following amplification circuitry. The full-width at half-maximum of the pulse is ∼90 ps and the tail of the optical pulse response is largely reduced with the nkT current. By reducing the tail, bandwidth is increased from 1.5 to 3 GHz. This proposes SiGe HPT is applicable for optoelectronic technology.
IEEE Electron Device Letters 06/2004; · 2.85 Impact Factor
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ABSTRACT: In this paper, the β of SiGe HBT shows negative temperature dependence could prevent thermal runaway is suitable for the radio frequency, high power applications was demonstrated and modeled. The breakdown voltage of HBT was measured as a function of reciprocal temperature. The current gain (β), the base open common-emitter breakdown voltages (BV<sub>CEO</sub>) and the collector-base breakdown voltage (BV<sub>CBO</sub>) are the three figures to evaluate the performance of SiGe HBT.
Semiconductor Device Research Symposium, 2003 International; 01/2004
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ABSTRACT: To integrate the phototransistor into the receiver circuit for optical communication, not only the compatible process is pre-requisite, but also the device model is required for circuit simulation. The designed nkT base current (depletion region recombination current at B-E junction) can increase the bandwidth of the phototransistor and provide a possible bias margin for avalanche gain. Therefore, a modified Mextram model is proposed for the heterojunction phototransistors (HPT) simulation. The common emitter output characteristics in a log I<sub>c</sub> scale have to be modeled by modified Mextram model. We concluded that the Mextram model is suitable for HPT modeling because the nkT base recombination current can increase the HPT speed.
Semiconductor Device Research Symposium, 2003 International; 01/2004
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W.-H. Chang,
A. T. Chou,
W. Y. Chen,
H. S. Chang,
T. M. Hsu, Z. Pei,
P. S. Chen,
S. W. Lee,
L. S. Lai,
S. C. Lu,
M.-J. Tsai
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ABSTRACT: Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with a silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes were employed. We found that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to RT. The fabricated device shows an internal quantum efficiency of about 0.015% at RT. The improved emission property is attributed to the reduced nonradiative recombination centers due to the surface passivation and thermal treatment. © 2003 American Institute of Physics.
Applied Physics Letters 10/2003; 83(14):2958-2960. · 3.84 Impact Factor
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ABSTRACT: A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50/spl deg/C. The photodetector with five-period Ge quantum dot has responsivity of 130, 0.16, and 0.08 mA/W at wavelengths of 820 nm, 1300 nm, and 1550 nm, respectively. The device with 20-period Ge quantum dot shows responsivity of 600 mA/W at the wavelength of 850 nm. The room temperature dark current density is as low as 0.06 mA/cm/sup 2/. The high performance of the photodetectors at 820 nm makes it feasible to integrate electrooptical devices into Si chips for short-range optical communication.
IEEE Electron Device Letters 06/2003; · 2.85 Impact Factor
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ABSTRACT: The Si<sub>0.5</sub>Ge<sub>0.5</sub>/Si multiple quantum wells (MQW) are placed between the base and collector of Si/SiGe heterojunction bipolar transistors as light absorbing layers. The phototransistor with high responsivity and bandwidth at 850 nm is demonstrated. Efficient near infrared (1,310 nm) photoresponse also achieved in this device. The results indicate the Si/SiGe phototransistor is suitable for front-end photoreceivers in the high-speed optical communication applications.
Electron Devices Meeting, 2002. IEDM '02. International; 02/2002
