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H. Takashino,
T. Okagaki,
T. Uchida,
T. Hayashi,
M. Tanizawa,
E. Tsukuda,
K. Eikyu,
S. Wakahara,
K. Ishikawa,
O. Tsuchiya,
Y. Inoue
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ABSTRACT: In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator. Using our new model, a numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along <110> in terms of the device performance of strained 65-nm-node nMOSFETs with contact etch stop layer and that both the shear-strain component and the quantum confinement effect are key factors in contributing to this superiority.
IEEE Transactions on Electron Devices 11/2008; · 2.32 Impact Factor
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Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on; 10/2005
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ABSTRACT: A 2 and 3 dimensional ensemble Monte Carlo device simulator is developed and applied to FinFET analysis by using `realistic' number of electrons within the channel of actual device. The result of transient fluctuation of electron numbers, currents, and distributions of potential and electron are shown.
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on; 10/2005
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ABSTRACT: Though, high dielectric constant material is a possible near future candidate to suppress gate current densities of MOSFETs, the barrier height generally decreases with increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.
Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on; 02/2002
