Publications (3)3.93 Total impact
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Article: Development of dedicated STEM with high stability.
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ABSTRACT: We developed a dedicated scanning transmission electron microscope with high-stability. The mechanical and electronic stabilities of the microscope were substantially improved, e.g. the specimen drift rate was found to be <0.2 nm min(-1). The Fourier transform of an ADF image showed spots of 0.105 nm at an acceleration voltage of 200 kV without spherical aberration corrector. The stabilized STEM instrument allows us to acquire distortion-free STEM images and high-signal to noise ratio analyses. We have shown the outline of the instrument and preliminary results.Journal of Electron Microscopy 01/2007; 56(1):17-20. · 1.31 Impact Factor -
Article: A new FIB fabrication method for micropillar specimens for three-dimensional observation using scanning transmission electron microscopy.
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ABSTRACT: A new method to prepare micropillar specimens with a high aspect ratio that is suitable for three-dimensional scanning transmission electron microscopy (3D-STEM) was developed. The key features of the micropillar fabrication are: first, microsampling to extract a small piece including the structure of interest in an IC chip, and second, an ion-beam with an incident direction of 60 degrees to the pillar's axis that enables the parallel sidewalls of the pillar to be produced with a high aspect ratio. A memory-cell structure (length: 6 microm; width: 300 x 500 nm) was fabricated in the micropillar and observed from various directions with a 3D-STEM. A planiform capacitor covered with granular surfaces and a solid crossing gate and metal lines was successfully observed threedimensionally at a resolution of approximately 5 nm.Journal of Electron Microscopy 02/2004; 53(5):479-83. · 1.31 Impact Factor -
Article: A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low dose elements in fine semiconductor devices.
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ABSTRACT: We developed a specimen-drift-free energy-dispersive X-ray (EDX) mapping system in a scanning transmission electron microscope (STEM) to improve the sensitivity and spatial resolution of EDX elemental mapping images. The amount of specimen drift was analysed from two STEM images before and after specimen drift by using the phase-correlation method, and was compensated for with an image-shift deflector of the STEM by the displacement of the scanning electron beam. We applied this system to observe the two-dimensional distribution of low dose arsenic in silicon semiconductor devices. The sensitivity of the elemental mapping was improved to several tenths atomic % for arsenic atoms while maintaining a spatial resolution of 2 nm.Journal of Electron Microscopy 02/2002; 51(3):167-71. · 1.31 Impact Factor
