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Publications (2)2.79 Total impact

  • Wen-Kuan Yeh, Chiutsung Huang, Mao-Chieh Chen
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    ABSTRACT: This work investigates the floating body effect (FBE) on the partially depleted SOI devices at various temperatures for high-performance 0.1 /spl mu/m MOSFET. The thermal effect on the device's characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET without body contacted (FB-SOI). It is found that the threshold voltage (Vth) and the off state drain current (I/sub OFF/) of the BC-SOI devices are more temperature sensitive than those of the FB-SOI devices. For operation at higher temperatures, there is no apparent difference in driving capability between the BC-SOI and FB-SOI MOSFETs.
    IEEE Electron Device Letters 08/2001; · 2.79 Impact Factor
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    ABSTRACT: The partially depleted SOI MOSFET (PD-SOI) has been found to be an attractive device due to advantages such as full dielectric isolation and reduced junction capacitance compared to the bulk Si device (Assaderaghi et al, 1997; Maeda et al, 2000). However, the floating body effect occurs on PD-SOI devices, resulting in threshold voltage reduction and noise overshoot (Tseng et al, 1997). Body contact structures have been proposed to improve the floating body effect (Huang et al, 1998). This paper describes high performance 0.1 μm generation SOI MOSFET technology with body contact structure (BC-SOI) which was used to investigate the device characteristics as well as thermal effects in comparison with the floating body SOI MOSFET (FB-SOI), which is without body contact. The dynamic-threshold voltage SOI MOSFET (DTMOS) was also investigated
    SOI Conference, 2000 IEEE International; 02/2000