A. Matsuno

Hiroshima University, Hirosima, Hiroshima, Japan

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Publications (9)2.33 Total impact

  • Akira Matsuno, Kentaro Shibahara
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    ABSTRACT: An ultrashallow junction (USJ) was formed by KrF excimer laser annealing. The effect of laser pulse duration on USJ formation was discussed through the evaluations of junction depth, sheet resistance and crystal defects. The possibility of reducing crystal defects by long-pulse laser annealing was discussed. A simple one-dimensional thermal diffusion model was used to analyze the results considering the solidification velocity after melting. The calculated results for the relationship between melt depth and laser energy density qualitatively agreed well with the experimental results. The results also showed that longer pulse duration made solidification velocity lower. Lower solidification velocity is the key to reducing the residual defects.
    Japanese Journal of Applied Physics 11/2006; 45(11):8537-. · 1.07 Impact Factor
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    ABSTRACT: Laser annealing is a promising candidate for ultra-shallow junction formation. However, melt-annealing that utilizes fast recrystallization to achieve non-equilibrium activation tends to accompany undesirable melting at portions other than junction areas. In this paper, deformation of Mo gate is discussed through experimental and simulation work
    International Symposium on VLSI Technology, Systems, and Applications, Proceedings 01/2006;
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    K. Shibahara, A. Matsuno, E. Takii, T. Eto
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    ABSTRACT: To compensate deep penetration depth of green laser light into Si, metal absorber was formed on a specimen. TiN absorber was effective to reduce necessary laser energy density to activate dopant, however Mo worked oppositely. In addition, specimens with the absorber encountered the problem of over-melt that increased junction depth severely. Mechanisms of these results were discussed utilizing one-dimensional thermal diffusion analysis. Absence of reflectivity reduction was considered to be the key of this phenomenon
    Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on; 11/2005
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    ABSTRACT: Ultra-shallow junction formation using an all-solid-state green laser (532 nm) has been investigated. Considering too large penetration depth of the green laser into Si, a light absorber layer was formed on a Si substrate. TiN or Mo was deposited on Si after Sb+ implantation through the 2-nm screen oxide. The TiN light absorber was effective in reducing the laser energy density to activate dopant but Mo increased the required energy density. Junction depth fundamentally depended on amorphous layer depth, however, the annealing with the absorber easily led to overmelt of c-Si. Mechanisms of these results were discussed utilizing one-dimensional thermal diffusion analysis.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 08/2005; 237:136-141. · 1.27 Impact Factor
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    ABSTRACT: KrF excimer laser annealing has been investigated for ultra-shallow low resistive junction formation necessary for MOS device scaling. The junction sheet resistance can be improved by multi-pulse irradiation or introduction of heat assist. By the heat assist method, laser energy density to obtain 500 W/sq. for 20 nm depth junction was reduced about by half.
    Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on; 10/2003
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    ABSTRACT: Ultra shallow junctions were formed using boron implantation and KrF excimer laser annealing. We found that sheet resistance and junction depth of the junction and crystal defects in the junction were affected by laser pulse duration and irradiation energy density. An ultra shallow junction of 26 nm junction depth and 350Ω/□ of sheet resistance without twin was obtained by the laser anneal with 55 ns pulse duration laser. We reduced the required energy density to form the ultra shallow junction by healing the Si substrate.
    Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on; 01/2003
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    ABSTRACT: Ultra shallow junction was formed by KrF excimer laser anneal method changing laser pulse duration. A simple one-dimensional thermal diffusion model was utilized to obtain time dependent temperature profile and to understand the influence of the pulse duration on junction properties such as junction depth, sheet resistance and residual defects. The model analysis also suggested that substrate heating during laser irradiation was effective to reduce the required laser energy density to activate dopants by melting pre-amorphized layer.
    01/2003;
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    ABSTRACT: Ultra shallow junctions were formed using boron implantation and KrF excimer laser annealing. Junction depth of 20 nm with sheet resistance of about 400 ohm/sq. was obtained at 700 mJ/cm<sup>2</sup> of the laser energy density and 33 ns of the laser pulse duration. Furthermore, we found that sheet resistance, junction depth and crystal defects in the junctions were affected by laser pulse duration
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on; 02/2001
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    ABSTRACT: The molecular dynamics method is employed for a very thin film system of which the thickness is within 100 nm under excimer laser irradiation in order to study the optimal pulse duration and shape of the laser as well as to know the dominant physical parameters of the excimer laser annealing process. For the laser energy absorption, the potential energy between atoms is assumed to change according to the laser intensity profile of the excimer laser pulse. The melted depths related to the pulse duration showed to be similar to the junction depth related to the duration time of laser pulse in the experimental results. The laser energy density exceeded the lowest light intensity of melting is one of the dominant physical parameters which affect on the melted depths in the simulation results. The number of lattice defects at constant region is discussed on the laser pulse characteristics such as laser duration time and energy density.